VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
2
(A)
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
• Flexible solution
rectification
for
reliable
AC
power
1
2
3
• Easy control peak current at charger power up
to reduce passive / electromechanical components
TO-247AD 3L
1 (K)
(G) 3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
35 A
1600 V
1.45 V
150 mA
-40 °C to +125 °C
TO-247AD 3L
Single SCR
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-40TPS16LHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dv/dt
di/dt
T
J
40 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
35
55
1600
500
1.45
1000
100
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-40TPS16LHM3
V
RRM
/ V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1700
I
RRM
/ I
DRM
AT 125 °C
mA
10
Revision: 23-Feb-18
Document Number: 96134
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS
on-state current as AC switch
Maximum peak, one-cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
Maximum latching current
Maximum reverse and direct leakage current
Maximum rate of rise of off-state voltage
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
dI/dt
I
H
I
L
I
RRM/
I
DRM
dV/dt
110 A, T
J
= 25 °C
90 A, T
J
= 25 °C
T
J
= 25 °C
Anode supply = 6 V, resistive load, initial T
J
= 1 A, I
T
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/V
DRM
T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
Initial
T
J
= T
J
max.
TEST CONDITIONS
T
C
= 79 °C, 180° conduction half sine wave
VALUES UNITS
35
55
420
500
880
1250
12 500
1.02
1.23
9.74
7.50
1.92
1.82
100
300
350
0.5
10
1000
V/μs
mA
A
2
s
A
2
s
V
A
m
V
A/μs
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GM
T
J
= -40 °C
Maximum required DC gate voltage to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
Maximum required DC gate current to trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
T
J
= 125 °C, V
DRM
= rated value
Anode supply = 6 V
resistive load
Anode supply = 6 V
resistive load
TEST CONDITIONS
VALUES
10
2.5
2.5
10
4.0
2.5
1.7
270
150
80
0.25
6
V
mA
mA
V
UNITS
W
A
V
Revision: 23-Feb-18
Document Number: 96134
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Maximum thermal resistance, case to heat sink
Approximate weight
minimum
maximum
Case style TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
DC operation
Mounting surface, smooth, and greased
TEST CONDITIONS
VALUES
-40 to +125
0.6
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
40TPS16LH
Maximum Allowable Case Temperature (°C)
130
R
thJC
(DC) = 0.6 °C/W
120
110
Conduction angle
100
90
80
70
0
30°
60°
90°
120°
180°
Maximum Average On-State Power Loss (W)
60
50
40
30
20
10
0
0
5
10
15
20
25
30
35
40
180°
120°
90°
60°
30°
RMS limit
Conduction angle
T
J
= 125 °C
10
20
30
40
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
130
120
110
Conduction period
100
30°
90
80
70
0
10
20
30
40
50
60
60°
90°
120°
180°
DC
R
thJC
(DC) = 0.6 °C/W
Maximum Average On-State Power Loss (W)
80
70
60
50
DC
180°
120°
90°
60°
30°
40 RMS limit
30
20
10
0
0
10
20
30
40
50
60
T
J
= 125 °C
Conduction period
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Average On-State Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 23-Feb-18
Document Number: 96134
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
550
500
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
450
400
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Peak Half Sine Wave
Forward Current (A)
Peak Half Sine Wave
Forward Current (A)
450
400
350
300
250
200
350
300
250
200
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
150
0.01
0.1
1
10
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
100
Instantaneous On-State Current (A)
10
T
J
= 25 °C
T
J
= 125 °C
1
0.5
1
1.5
2
Instantaneous On-State Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous Gate Voltage (V)
10
Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 30
Ω
tr = 0.5 µs, tp >= 6 µs
b) Recommended load line for
<= 30 % rated di/dt: 20 V, 65
Ω
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, t
p
= 500 µs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 25 ms
(4) PGM = 10 W, t
p
= 5 ms
(a)
(b)
T = -40 °C
J
T = 25 °C
J
T = 125 °C
J
1
V
GD
I
GD
0.1
0.001
0.01
(4) (3)
(2) (1)
Frequency Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 8 - Gate Characteristics
Revision: 23-Feb-18
Document Number: 96134
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-40TPS16LHM3
www.vishay.com
Vishay Semiconductors
Transient Thermal Impedance Z
thJC
(°C/W)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Steady state value
(DC operation)
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
9
40
2
-
-
-
-
-
-
-
-
-
T
3
P
4
S
5
16
6
L
7
H
8
M3
9
Vishay Semiconductors product
Current rating (40 = 40 A)
Circuit configuration:
T = thyristor
Package:
P = TO-247
Type of silicon:
S = standard recovery rectifier
Voltage ratings
L = long leads
H = AEC-Q101 qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
16 = 1600 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-40TPS16LHM3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 3L
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95007
Revision: 23-Feb-18
Document Number: 96134
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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