IAUT300N08S5N012
OptiMOS™-5 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
80
1.2
300
H-PSOF-8-1
Tab
8
1
Tab
V
m
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
1
8
Type
IAUT300N08S5N012
Package
P/G-HSOF-8-1
Marking
5N08012
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25 °C
I
D
=150 A
-
-
T
C
=25 °C
-
-
Value
300
300
1200
817
300
±20
375
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2016-11-29
IAUT300N08S5N012
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
-
-
-
0.4
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
2)
Gate threshold voltage
Zero gate voltage drain current
2)
V
GS
=0 V,
I
D
=1 mA
V
DS
=V
GS
,
I
D
=275 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=50 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=6 V,
I
D
=75 A
V
GS
=10 V,
I
D
=100 A
V
(BR)DSS
V
GS(th)
I
DSS
80
2.2
-
-
3
0.1
-
3.8
1
V
µA
-
-
-
-
1
-
1.3
1.0
20
100
1.7
1.2
nA
mΩ
IAUT300N08S5N012
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
12500
2000
86
31
19
69
55
16250 pF
2600
130
-
-
-
-
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
56
37
178
4.5
73
56
231
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=40 V,
I
F
=50A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.9
86
177
300
1200
1.2
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 0.4 K/W the chip is able to carry 400A at 25°C.
Defined by design. Not subject to production test.
2)
Rev. 1.0
page 3
2016-11-29
IAUT300N08S5N012
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V
400
350
300
300
250
P
tot
[W]
200
200
I
D
[A]
150
100
50
0
0
50
100
150
200
0
50
100
150
200
100
0
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
10000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
1 µs
1000
10 µs
0.5
10
-1
100 µs
Z
thJC
[K/W]
I
D
[A]
0.1
100
1 ms
0.05
10
-2
0.01
10
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2016-11-29
IAUT300N08S5N012
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
1200
10 V
6.5 V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C
parameter:
V
GS
4
4.5 V
5V
1000
3.5
3
800
6V
R
DS(on)
[m]
2.5
I
D
[A]
600
5.5 V
2
5.5 V
400
1.5
5V
4.5 V
6V
6.5 V
200
1
10 V
0
0
1
2
3
4
5
6
7
0.5
0
100
200
300
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
1200
-55 °C 25 °C
175 °C
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 100 A;
V
GS
= 10 V
2.1
1.9
1.7
1000
800
R
DS(on)
[m]
1.5
1.3
1.1
0.9
I
D
[A]
600
400
200
0.7
0.5
2
4
6
8
-60
-20
20
60
100
140
180
0
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2016-11-29
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