VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 50 A
2
(A)
FEATURES
• AEC-Q101 qualified, meets JESD 201
class 1A whisker test
• Flexible solution for reliable AC power
rectification
1
2
3
• Easy control peak current at charger power
up to reduce passive / electromechanical components
TO-247AD 3L
1 (K)
(G) 3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
(typ.)
I
GT
(typ.)
T
J
max.
Package
Circuit configuration
50 A
1200 V
1.2 V
40 mA
125 °C
TO-247AD 3L
Single SCR
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-50TPS12 high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching, and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
Peak repetitive reverse voltage
On-state voltage
Average rectified forward current
Maximum continuous RMS on-state current
Non-repetitive peak surge current
Maximum rate of rise
Operating junction and storage temperature range
SYMBOL
V
RRM
/ V
DRM
V
T
I
T(AV)
I
RMS
I
TSM
dv/dt
T
J
, T
Stg
50 A, T
J
= 125 °C
TEST CONDITIONS
VALUES
1200
1.2
50
79
630
1000
-40 to +125
V/μs
°C
A
UNITS
V
VOLTAGE RATINGS
PART NUMBER
VS-50TPS12LHM3
V
RRM
/ V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1300
I
RRM
/ I
DRM
AT 125 °C
mA
10
Revision: 23-Feb-18
Document Number: 96108
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum continuous RMS on-state
current as AC switch
Peak, one-cycle non-repetitive surge current
I
2
t for fusing
I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
On-state voltage
Rate of rise of turned-on current
Holding current
Latching current
Reverse and direct leakage current
Rate of rise of off-state voltage
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
T
di/dt
I
H
I
L
I
RRM
/I
DRM
dv/dt
50 A, T
J
= 25 °C
100 A, T
J
= 25 °C
T
J
= 25 °C
Anode supply = 6 V, resistive load,
T
J
= 25 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
-k =
T
J
= 125 °C
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied, T
J
= 125 °C
Initial T
J
= T
J
maximum
TEST CONDITIONS
T
C
= 82 °C, 180° conduction half sine wave
TYP.
-
-
-
-
-
-
-
-
-
-
-
1.2
1.4
-
-
-
-
-
-
MAX. UNITS
50
79
530
630
1405
1986
19 850
0.89
0.97
6.77
6.32
1.32
1.6
150
300
350
0.05
10
1000
V/μs
mA
A
2
s
A
2
s
V
m
V
A/μs
A
TRIGGERING
PARAMETER
Peak gate power
Average gate power
Peak gate current
Peak negative gate voltage
Required DC gate voltage to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
T
J
= -40 °C
V
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
Required DC gate to trigger
DC gate voltage not to trigger
DC gate current not to trigger
I
GT
V
GD
I
GD
T
J
= 25 °C
T
J
= 125 °C
T
J
= 125 °C, V
DRM
= rated value
Anode supply = 6 V resistive load
Anode supply = 6 V resistive load
TEST CONDITIONS
10 ms sine pulse, no voltage reapplied
TYP.
-
-
-
-
-
-
-
-
45
-
-
-
MAX.
10
2.5
2.5
10
1.6
1.5
1.1
160
100
70
0.25
4.5
V
mA
mA
V
UNITS
W
A
SWITCHING
PARAMETER
Turn-on time
Turn-off time
SYMBOL
t
gt
t
q
TEST CONDITIONS
I
T
= 50 A, V
D
= 50 % V
DRM
, I
gt
= 300 mA, T
J
= 25 °C
I
T
= 50 A, V
D
= 80 % V
DRM
, dV/dt = 20 V/μs, t
p
= 200 μs
I
gt
= 100 mA, dI/dt = 10 A/μs, V
R
= 100 V, T
J
= 125 °C
TYP.
1.5
85
MAX.
-
-
μs
UNITS
Revision: 23-Feb-18
Document Number: 96108
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
TEST CONDITIONS
TYP.
-40
-
-
0.2
6 (5)
12 (10)
Case style Super TO-247AD 3L
50TPS12LH
MAX.
125
0.35
40
-
kgf · cm
(lbf · in)
°C/W
UNITS
°C
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Mounting torque
Marking device
minimum
maximum
R
thJ-HS
CONDUCTION PER JUNCTION
DEVICE
VS-50TPS12LHM3
SINE HALF-WAVE CONDUCTION
180°
0.143
120°
0.166
90°
0.208
60°
0.299
30°
0.490
RECTANGULAR WAVE CONDUCTION
180°
0.099
120°
0.168
90°
0.223
60°
0.311
30°
0.494
UNITS
°C/W
Max. Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
130
R
thJC
(DC) = 0.35 °C/W
120
110
100
90
80
70
60
50
0
10
20
30
40
50
60
180°
30°
60°
90°
120°
Ø
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
T
J
= 150 °C
Ø
180°
120°
90°
60°
30°
RMS limit
Conduction angle
Conduction angle
Average On-State Current (A)
Fig. 1 - Current Rating Characteristics
Average On-State Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
Max. Average On-state Power Loss (W)
130
120
110
100
90
80
120°
70
60
50
0
10
20
30
40
50
60
70
80
30°
60°
90°
180°
DC
R
thJC
(DC) = 0.35 °C/W
Ø
Conduction angle
110
100
90
80
70
60
50
40
30
20
10
0
0
10
20
30
40
50
60
70
80
Tj = 150 °C
RMS limit
180°
120°
90°
60°
30°
DC
Ø
Conduction angle
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 23-Feb-18
Document Number: 96108
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
Peak Half
Sine
Wave On- state Current (A)
650
600
550
500
450
400
350
300
250
0.01
Maximum non repetitive
surge
current
vs. pulse train duration. Control of
conduction may not be maintained.
Initial T
j
= 150 °C
No voltage reapplied
rated V
RRM
reapplied
Peak Half
Sine
Wave On - state Current (A)
560
510
460
410
360
310
260
1
10
100
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
j
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
0.1
1
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude
Half Cycle Current Pulse (N)
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On - state Current (A)
1000
100
T
J
= 125 °C
10
T
J
= 25 °C
1
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous On - state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
Instantaneous
Gate
Voltage (V)
Rectangular gate pulse
a) Recommended load line for rated dI/dt: 20 V, 30
Ω
t
r
= 0.5 μs, t
p
≥ 6 μs
b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65
Ω
t
r
= 1 μs, t
p
≥ 6 μs
(1) PGM = 100 W, t
p
= 500 μs
(2) PGM = 50 W, t
p
= 1 ms
(3) PGM = 20 W, t
p
= 2.5 ms
(4) PGM = 10 W, t
p
= 5 ms
10
T
J
= - 40 °C
T
J
= 150 °C
T
J
= 25 °C
1
(4)
b)
(3)
(2)
(1)
V
GD
0.1
0.0001
I
GD
0.001
0.01
50TPS12L
Series
0.1
a)
1
Frequency limited by PG(AV)
10
100
1000
Instantaneous
Gate
Current (A)
Fig. 8 - Gate Characteristics
Revision: 23-Feb-18
Document Number: 96108
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-50TPS12LHM3
www.vishay.com
Vishay Semiconductors
Z
thJC
- Transient Thermal Impedance
(°C/W)
1
0.50
0.33
0.25
0.17
0.08
0.1
Single
Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Square
Wave Pulse Duration (s)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
9
50
2
-
-
-
-
-
-
-
-
-
T
3
P
4
S
5
12
6
L
7
H
8
M3
9
Vishay Semiconductors product
Current code (50 = 50 A)
Circuit configuration:
T = thyristor
P = TO-247AD package
Type of silicon:
S = standard recovery rectifier
Voltage code (12 = 1200 V)
Package L = long lead
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(example)
PREFERRED P/N
VS-50TPS12LHM3
QUANTITY PER TUBE
25
MINIMUM ORDER QUANTITY
contact factory
PACKAGING DESCRIPTION
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
TO-247AD 3L
TO-247AD 3L
www.vishay.com/doc?95626
www.vishay.com/doc?95007
Revision: 23-Feb-18
Document Number: 96108
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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