VS-35EPF12LHM3, VS-35APF12LHM3
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 35 A
FEATURES
• Very low forward voltage drop
• Glass passivated pellet chip junction
2
1
1
2
3
3
• AEC-Q101 qualified meets JESD 201 class 1A
whisker test
TO-247AD 3L
Base cathode
2
TO-247AD 2L
Base cathode
2
• Flexible solution for reliable AC power
rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
1
Cathode
3
Anode
1
Anode
3
Anode
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
VS-35EPF12LHM3
VS-35APF12LHM3
DESCRIPTION
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Package
Circuit configuration
Snap factor
35 A
1200 V
1.27 V
350 A
95 ns
150 °C
TO-247AD 2L, TO-247AD 3L
Single
0.6
High voltage rectifiers optimized for very low forward
voltage drop with moderate leakage, and short reverse
recovery time.
These devices are intended for use in main rectification
(single or three phase bridge).
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
t
rr
T
J
15 A, T
J
= 25 °C
1 A, 100 A/μs
CHARACTERISTICS
Sinusoidal waveform
VALUES
35
1200
350
1.27
95
-40 to +150
UNITS
A
V
A
V
ns
°C
VOLTAGE RATINGS
PART NUMBER
VS-35EPF12LHM3
VS-35APF12LHM3
V
RSM
, MAXIMUM
V
RRM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
PEAK REVERSE VOLTAGE
VOLTAGE
V
V
1200
1200
1300
1300
I
RRM
AT 150 °C
mA
6
Revision: 22-Feb-18
Document Number: 96492
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-35EPF12LHM3, VS-35APF12LHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 102 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
35
300
350
450
636
6360
A
2
s
A
2
s
A
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
35 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.47
10.09
0.992
0.1
6
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 30 A
pk
25 A/μs
25 °C
Typical
VALUES
450
6.1
2.16
0.6
UNITS
ns
A
μC
dir
dt
I
FM
t
a
t
rr
t
b
Q
rr
I
RM(REC)
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
unction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style TO-247AD 2L
Case style TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth, and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
0.6
40
0.25
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
35EPF12LH
35APF12LH
Revision: 22-Feb-18
Document Number: 96492
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-35EPF12LHM3, VS-35APF12LHM3
www.vishay.com
Vishay Semiconductors
Max. Average On-state Power Loss (W)
90
80
70
60
50
40
30
20
10
T
J
= 150 °C
0
0
10
20
30
40
50
60
Conduction angle
RMS limit
180°
120°
90°
60°
30°
Max. Allowable Case Temperature (°C)
150
R
thJC
(DC) = 0.60 °C/W
140
130
120
110
100
60°
90
80
0
5
10
15
20
25
30
35
40
30°
90°
120°
180°
DC
Ø
Conduction angle
Average On -
State
Current (A)
Fig. 1 - Current Rating Characteristics
Average On-state Current (A)
Fig. 4 - Forward Power Loss Characteristics
Max. Allowable Case Temperature (
°C)
150
R
thJC
(DC) = 0.60 °C/W
140
130
120
110
100
90
30°
80
0
10
20
30
40
50
60
60°
90°
120°
180°
DC
Ø
Peak Half Sine Wave Forward Current (A)
350
300
250
200
150
100
50
1
10
100
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Conduction Period
Average On-State Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
Max. Average On-State Power Loss (W)
70
60
50
40
RMS limit
30
20
10
0
0
10
20
30
40
T
J
= 150 °C
Ø
400
350
300
250
200
150
100
50
0.01
Maximum non-repetitive surge current
vs. pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
180°
120°
90°
60°
30°
Conduction angle
0.1
1
Average On-State Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
Document Number: 96492
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-35EPF12LHM3, VS-35APF12LHM3
www.vishay.com
Vishay Semiconductors
Q
rr
- Typical Reverse Recovery Charge (µC)
6
5
4
3
I
FM
= 10 A
2
1
0
0
50
100
150
200
I
FM
= 5 A
I
FM
= 1 A
T
J
= 25 °C
I
FM
= 30 A
I
FM
= 20 A
Instantaneous Forward Current (A)
1000
100
10
T
J
= 25 °C
T
J
= 150 °C
1
0
1
2
3
4
5
6
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Q
rr
- Typical Reverse Recovery Charge (µC)
t
rr
- Typical Reverse Recovery Time (µs)
0.7
T
J
= 25 °C
0.6
0.5
0.4
0.3
0.2
0.1
0
0
50
100
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 5 A
I
FM
= 1 A
10
T
J
= 150 °C
8
I
FM
= 30 A
I
FM
= 20 A
6
4
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
2
0
0
50
100
150
200
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
t
rr
- Typical Reverse Recovery Time (µs)
I
rr
- Typical Reverse Recovery Current (A)
1.2
T
J
= 150 °C
1.0
0.8
0.6
0.4
0.2
0
0
50
100
150
200
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 1 A
25
T
J
= 25 °C
20
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
10
I
FM
= 1 A
5
15
0
0
50
100
150
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 22-Feb-18
Document Number: 96492
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-35EPF12LHM3, VS-35APF12LHM3
www.vishay.com
Vishay Semiconductors
I
rr
- Typical Reverse Recovery Current (A)
35
T
J
= 150 °C
30
25
20
15
10
I
FM
= 1 A
5
0
0
50
100
150
200
I
FM
= 30 A
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
1
0.5
0.33
0.25
0.1
0.08
Single
pulse
0.17
Steady state
value
(DC operation)
0.01
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 22-Feb-18
Document Number: 96492
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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