VS-30TPS16LHM3
www.vishay.com
Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 30 A
2
(A)
FEATURES
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
1
2
3
TO-247AD 3L
1 (K) (G) 3
• Easy control peak current at charger power
up to reduce passive / electromechanical components
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
20 A
1600 V
1.3 V
45 mA
-40 °C to +125 °C
TO-247AD 3L
Single SCR
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-30TPS16LHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
20 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
20
A
30
1600
300
1.3
500
150
-40 to +125
V
A
V
V/μs
A/μs
°C
UNITS
VOLTAGE RATINGS
PART NUMBER
V
RRM
/V
DRM
, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
1600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
1700
I
RRM
/I
DRM
AT 125 °C
mA
10
VS-30TPS16LHM3
Revision: 22-Feb-18
Document Number: 96491
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS16LHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Maximum holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/I
DM
I
H
I
L
dV/dt
dI/dt
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
20 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
RRM
/V
DRM
TEST CONDITIONS
T
C
= 95 °C, 180° conduction half sine wave
VALUES
20
30
250
300
310
442
4420
1.3
12
1.0
0.5
10
150
200
500
150
V/µs
A/µs
mA
A
2
s
A
2
s
V
m
V
A
UNITS
Anode supply = 6 V, resistive load, initial I
T
= 1 A, T
J
= 25 °C
Anode supply = 6 V, resistive load,
T
J
= 25 °C
T
J
= T
J
maximum, linear to 80 % V
DRM
, R
g
- k = open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+ I
GM
- V
GM
Anode supply = 6 V, resistive load, T
J
= - 10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
Anode supply = 6 V, resistive load, T
J
= - 10 °C
V
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
V
GD
I
GD
T
J
= 125 °C, V
DRM
= rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
Revision: 22-Feb-18
Document Number: 96491
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS16LHM3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Maximum thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style
TO-247AD 3L
SYMBOL
T
J
, T
Stg
R
thJC
DC operation
R
thJA
R
thCS
Mounting surface, smooth and greased
40
0.2
6
0.21
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
TEST CONDITIONS
VALUES
-40 to 125
0.8
UNITS
°C
Mounting torque
Marking device
30TPS16H
Maximum Allowable Case Temperature (°C)
Maximum Average On-state Power Loss (W)
130
R
thJC
(DC) = 0.8 °C/W
120
Conduction Angle
60
50
40
30
20
10
0
0
5
10
15
20
25
30
Average On-state Current (A)
180°
120°
90°
60°
30°
RMS Limit
110
30°
100
60°
90°
120°
180°
Conduction Angle
T
J
= 125 °C
90
0
5
10
15
20
25
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
Maximum Average On-state Power Loss (W)
130
R
thJC
(DC) = 0.8 °C/W
80
DC
180°
120°
90°
60°
30°
120
60
110
Conduction Period
40 RMS limit
100
30°
90
60°
90°
120°
0
5
10
15
180°
25
DC
30
35
Conduction period
20
T
J
= 125 °C
0
0
10
20
30
40
50
Average On-state Current (A)
80
20
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Feb-18
Document Number: 96491
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS16LHM3
www.vishay.com
Vishay Semiconductors
300
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
280
260
240
220
200
180
160
140
120
1
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
280
260
240
220
200
180
160
140
120
0.01
Maximum non repetitive surge current
vs. pulse train duration. Control
of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
10
100
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
T
J
= 25 °C
T
J
= 125 °C
100
10
1
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Steady state value
(DC operation)
Single pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 22-Feb-18
Document Number: 96491
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-30TPS16LHM3
www.vishay.com
Vishay Semiconductors
Transient Thermal Impedance Z
thJC
(°C/W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
0.1
D = 0.08
Steady state value
(DC operation)
Single pulse
0.01
0.0001
0.001
0.01
Square Wave Pulse Duration (s)
0.1
1
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
30
T
P
S
16
L
H
M3
1
1
2
3
4
5
6
7
8
9
2
-
-
-
-
-
-
-
-
-
3
4
5
6
7
8
9
Vishay
Semiconductors
product
Current rating (30 = 30 A)
Circuit configuration:
T = thyristor
Package:
P = TO-247
Type of
silicon:
S
=
standard
recovery rectifier
Voltage rating (16 = 1600 V)
Package L = long lead
H = AEC-Q101 qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-30TPS16LHM3
QUANTITY PER T/R
25
MINIMUM ORDER QUANTITY
500
PACKAGING DESCRIPTION
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95626
www.vishay.com/doc?95007
Revision: 22-Feb-18
Document Number: 96491
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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