VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
Thyristor, Surface Mount, Phase Control SCR, 16 A
FEATURES
4
Anode
2, 4
2
3
1
1
3
Cathode Gate
D
2
PAK (TO-263AB)
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
• Flexible solution for reliable AC power
rectification
• Easy control peak current at charger power up to reduce
passive / electromechanical components
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
16 A
1200 V
1.25 V
45 mA
-40 to +125 °C
D
2
PAK (TO-263AB)
Single SCR
APPLICATIONS
• On-board and off-board EV / HEV battery chargers
• Renewable energy inverters
DESCRIPTION
The VS-25TTS12SLHM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
thCA
= 15 °C/W
Aluminum IMS with heatsink, R
thCA
= 5 °C/W
Note
• T
A
= 55 °C, T
J
= 125 °C, footprint 300 mm
2
SINGLE-PHASE BRIDGE
3.5
8.5
16.5
THREE-PHASE BRIDGE
5.5
13.5
25.0
A
UNITS
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
RMS
V
RRM
/V
DRM
I
TSM
V
T
dV/dt
dI/dt
T
J
16 A, T
J
= 25 °C
TEST CONDITIONS
Sinusoidal waveform
VALUES
16
25
1200
350
1.25
500
150
-40 to +125
UNITS
A
V
A
V
V/μs
A/μs
°C
VOLTAGE RATINGS
PART NUMBER
VS-25TTS12SLHM3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1200
V
DRM
, MAXIMUM PEAK
DIRECT VOLTAGE
V
1200
I
RRM
/ I
DRM
,
AT 125 °C
mA
10
Revision: 22-Feb-18
Document Number: 96123
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
SYMBOL
I
T(AV)
I
RMS
I
TSM
I
2
t
I
2
t
V
TM
r
t
V
T(TO)
I
RM
/ I
DM
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
16 A, T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
VS-25TTS08,
VS-25TTS12
V
R
= Rated V
RRM
/V
DRM
Anode supply = 6 V,
resistive load, initial I
T
= 1 A,
T
J
= 25 °C
TEST CONDITIONS
T
C
= 93 °C, 180° conduction half sine wave
VALUES
TYP.
16
25
300
350
450
630
6300
1.25
12.0
1.0
0.5
10
-
200
500
150
V/μs
A/μs
150
mA
A
2
s
A
2
s
V
m
V
A
MAX.
UNITS
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
I
H
I
L
dV/dt
di/dt
Anode supply = 6 V, resistive load, T
J
= 25 °C
T
J
= T
J
max., linear to 80 %, V
DRM
= R
g
- k = open
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
+I
GM
-V
GM
Anode supply = 6 V, resistive load, T
J
= -10 °C
Maximum required DC gate current to trigger
I
GT
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Anode supply = 6 V, resistive load, T
J
= -10 °C
Maximum required DC gate voltage to trigger
V
GT
V
GD
I
GD
Anode supply = 6 V, resistive load, T
J
= 25 °C
Anode supply = 6 V, resistive load, T
J
= 125 °C
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
T
J
= 125 °C, V
DRM
= rated value
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
mA
V
mA
UNITS
W
A
V
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
t
gt
t
rr
t
q
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
VALUES
0.9
4
110
μs
UNITS
Revision: 22-Feb-18
Document Number: 96123
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Soldering temperature
Maximum thermal resistance,
junction to case
Typical thermal resistance,
junction to ambient (PCB mount)
Approximate weight
Marking device
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
T
S
R
thJC
R
thJA
(1)
TEST CONDITIONS
VALUES
-40 to +125
UNITS
°C
For 10 s (1.6 mm from case)
DC operation
260
1.1
°C/W
40
2
0.07
g
oz.
25TTS12SH
Note
(1)
When mounted on 1" square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
130
R
thJC
(DC) = 1.1 °C/W
120
25
180°
120°
90°
60°
30°
RMS limit
20
Conduction angle
15
110
30°
100
60°
90°
120°
180°
90
0
5
10
15
20
Average On-state Current (A)
10
Conduction angle
5
T
J
= 125 °C
0
0
4
8
12
16
20
Fig. 1 - Current Rating Characteristics
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
35
30
25
20
RMS Limit
15
10
5
0
0
5
10
15
20
25
30
Average On-state Current (A)
Conduction period
R
thJC
(DC) = 1.1 °C/W
120
110
DC
180°
120°
90°
60°
30°
Conduction period
100
90
30°
80
0
5
90°
120°
60°
180°
10
15
20
DC
25
30
T
J
= 125 °C
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 22-Feb-18
Document Number: 96123
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
400
350
Peak Half Sine Wave On-state Current (A)
300
Peak Half Sine Wave On-state Current (A)
At any rated load condition and with
rated V
RRM
applied following surge.
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
Maximum non repetitive surge current
vs. pulse train duration.
350 Control of conduction may not be maintained.
Initial T
J
= 125 °C
No voltage reapplied
300
Rated V
RRM
reapplied
250
200
150
100
0.01
250
200
150
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
0.1
Pulse Train Duration (s)
1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
100
T
J
= 25 °C
10
T
J
= 125 °C
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Transient Thermal Impedance Z
thJC
(°C/W)
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.01
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Gate Characteristics
Revision: 22-Feb-18
Document Number: 96123
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25TTS12SLHM3
www.vishay.com
Vishay Semiconductors
(1)
(2)
(3)
(4)
(a )
(b)
T = -10 °C
J
100
Instantaneous Gate Voltage (V)
R tangular gate pulse
ec
a)R ommended load line for
ec
rated di/ dt: 10 V, 20 ohms
tr = 0.5 µs tp >= 6 µs
,
b)Rec ommended load line for
<= 30% rated d i/ dt: 10 V, 65 ohms
10
tr = 1 µs tp >= 6 µs
,
PGM = 40 W, t
p
= 1 ms
PGM = 20 W, t
p
= 2 ms
PGM = 8 W, t
p
= 5 ms
PGM = 4 W, t
p
= 10 ms
T = 25 °C
J
J
T = 125 °C
1
(4)
(3)
(2)
(1)
VGD
IGD
0.1
0.001
0.01
Frequency limited by PG(AV)
0.1
1
10
100
Instantaneous Gate Current (A)
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
25
2
-
-
-
-
-
-
-
-
-
-
T
3
T
4
S
5
12
6
S
7
L
8
H
9
M3
10
Vishay Semiconductors product
Current rating (25 = 25 A)
Circuit configuration:
T = single thyristor
Package:
T = D
2
PAK (TO-263AB)
Type of silicon:
S = standard recovery rectifier
Voltage rating: voltage code x 100 = V
RRM
S = surface mountable
L = tape and reel (left oriented), for different orientation contact factory
H = AEC-Q101 qualified
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
12 = 1200 V
8
9
10
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25TTS12SLHM3
QUANTITY PER T/R
800
MINIMUM ORDER QUANTITY
800
PACKAGING DESCRIPTION
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
www.vishay.com/doc?95046
www.vishay.com/doc?95444
www.vishay.com/doc?96317
Revision: 22-Feb-18
Document Number: 96123
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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