IAUT165N08S5N029
OptiMOS™-5 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
80
2.9
165
H-PSOF-8-1
Tab
8
1
Tab
V
m
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
1
8
Type
IAUT165N08S5N012
Package
P/G-HSOF-8-1
Marking
5N08029
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
1)
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
-
T
C
=25 °C
I
D
=83 A
-
-
T
C
=25 °C
-
-
Value
165
120
660
225
165
±20
167
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2016-05-25
IAUT165N08S5N029
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
-
-
-
0.9
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
2)
Gate threshold voltage
Zero gate voltage drain current
2)
V
GS
=0 V,
I
D
=1 mA
V
DS
=V
GS
,
I
D
=108 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=50 V,
V
GS
=0 V,
T
j
=85 °C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=6 V,
I
D
=40 A
V
GS
=10 V,
I
D
=80 A
V
(BR)DSS
V
GS(th)
I
DSS
80
2.2
-
-
3
0.1
-
3.8
1
V
µA
-
-
-
-
1
-
2.9
2.4
20
100
4.4
2.9
nA
mΩ
Rev. 1.0
page 2
2016-05-25
IAUT165N08S5N029
Parameter
Symbol
Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40 V,
V
GS
=10 V,
I
D
=100 A,
R
G
=3.5
V
GS
=0 V,
V
DS
=40 V,
f
=1 MHz
-
-
-
-
-
-
-
4900
790
36
13
9
23
29
6370
1027
54
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=40 V,
I
D
=100 A,
V
GS
=0 to 10 V
-
-
-
-
24
15
70
5.0
31
23
90
-
nC
V
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
R
=40 V,
I
F
=50A,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
0.9
60
96
165
660
1.2
-
-
A
V
ns
nC
Current is limited by bondwire; with an
R
thJC
= 0.9 K/W the chip is able to carry 171A at 25°C.
Defined by design. Not subject to production test.
2)
Rev. 1.0
page 3
2016-05-25
IAUT165N08S5N029
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V
200
200
150
150
P
tot
[W]
100
I
D
[A]
0
50
100
150
200
100
50
50
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
1000
1 µs
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
0
0.5
10 µs
100 µs
1 ms
100
10
-1
0.1
Z
thJC
[K/W]
0.05
I
D
[A]
0.01
10
10
-2
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2016-05-25
IAUT165N08S5N029
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C
parameter:
V
GS
700
10 V
6 Typ. drain-source on-state resistance
R
DS(on)
= (I
D
);
T
j
= 25 °C
parameter:
V
GS
12
4.5 V
10
525
6.5 V
8
R
DS(on)
[m]
I
D
[A]
350
6V
6
5V
5.5 V
4
5.5 V
6V
6.5 V
10 V
175
2
5V
4.5 V
0
0
1
2
3
4
5
6
7
0
0
50
100
150
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
700
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V
5
4.5
525
4
R
DS(on)
[m]
3.5
I
D
[A]
350
3
2.5
175
2
175 °C
0
2
4
25 °C
1.5
-55 °C
6
8
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2016-05-25
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