VS-25ETS12SLHM3
www.vishay.com
Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 25 A
FEATURES
Base
cathode
2
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Glass passivated pellet chip junction
• AEC-Q101 qualified
• Meets JESD 201 class 1A whisker test
2
3
1
1
Anode
3
Anode
• Flexible solution for reliable AC power rectification
• High surge, low V
F
rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
FSM
T
J
max.
Package
Circuit configuration
25 A
1200 V
1.14 V
300 A
150 °C
D
2
PAK
(TO-263AB)
Single
APPLICATIONS
• Input rectification
• On-board and off-board EV / HEV battery chargers
DESCRIPTION
The VS-25ETS12SLHM3 rectifier High Voltage Series has
been optimized for very low forward voltage drop, with
moderate leakage.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
20
THREE-PHASE BRIDGE
23
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
VALUES
25
1200
300
1.0
-40 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-25ETS12SLHM3
V
RRM
, MAXIMUM PEAK
REVERSE VOLTAGE
V
1200
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK REVERSE
VOLTAGE
V
1300
I
RRM
AT 150 °C
mA
1
Revision: 22-Feb-18
Document Number: 96425
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS12SLHM3
www.vishay.com
Vishay Semiconductors
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 106 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
VALUES
25
250
300
316
442
4420
A
2
s
A
2
s
A
UNITS
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
25 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= rated V
RRM
VALUES
1.14
10.4
0.85
0.1
1.0
UNITS
V
m
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Marking device
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA (1)
R
thCS
DC operation
For D
2
PAK version
Mounting surface, smooth, and greased
TEST CONDITIONS
VALUES
-40 to +150
0.9
62
0.5
2
0.07
25ETS12SH
g
oz.
°C/W
UNITS
°C
Note
(1)
When mounted on 1” square (650 mm
2
) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
Revision: 22-Feb-18
Document Number: 96425
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS12SLHM3
www.vishay.com
Vishay Semiconductors
60
DC
180°
120°
90°
60°
30°
RMS limit
150
R
thJC
(DC) = 0.9 K/W
Maximum Allowable Case
Temperature (°C)
140
130
120
110
100
90
80
0
5
10
15
20
25
30
30°
60°
90°
120°
180°
Ø
Maximum Average Forward
Power Loss (W)
50
40
30
20
Conduction angle
Ø
10
0
0
10
20
Conduction period
T
J
= 150 °C
30
40
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
R
thJC
(DC) = 0.9 K/W
300
At any rated load condition and with
rated V
RRM
applied following
surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
140
Ø
130
120
Conduction period
Peak Half
Sine
Wave
Forward Current (A)
200
DC
110
30°
100
90
0
5
10
15
20
25
30
35
40
60°
90°
120°
180°
100
0
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
40
300
180°
120°
90°
60°
30°
RMS limit
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial T
J
= 150 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum Average Forward
Power Loss (W)
35
30
25
20
15
10
5
Peak Half
Sine
Wave
Forward Current (A)
30
200
100
Ø
Conduction angle
T
J
= 150 °C
0
0
5
10
15
20
25
0
0.01
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
Document Number: 96425
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS12SLHM3
www.vishay.com
Vishay Semiconductors
1000
T
J
= 25 °C
100
T
J
= 150 °C
Instantaneous Forward Current (A)
10
1
0
1
2
3
4
5
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
1
Z
thJC
- Transient Thermal
Impedance (°C/W)
Steady state
value
(DC operation)
0.1
Single
pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.01
0.0001
0.001
0.01
0.1
1
10
100
Square
Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 22-Feb-18
Document Number: 96425
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-25ETS12SLHM3
www.vishay.com
ORDERING INFORMATION TABLE
Vishay Semiconductors
Device code
VS-
25
E
T
S
12
S
L
H
M3
1
1
2
3
4
5
6
7
8
9
10
-
-
-
-
-
-
-
-
-
-
2
3
4
5
6
7
8
9
10
Vishay
Semiconductors
product
Current rating (25 = 25 A)
Circuit configuration
E =
single
diode
Package:
T = D
2
PAK
Type of
silicon:
S
=
standard
recovery rectifier
Voltage code x 100 = V
RRM
S
=
surface
mountable
L = tape and reel (left oriented), for different orientation,
contact factory
H = AEC-Q101
qualified
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
12 = 1200 V
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-25ETS12SLHM3
QUANTITY PER REEL
800
MINIMUM ORDER QUANTITY
800
PACKAGING DESCRIPTION
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95046
www.vishay.com/doc?95444
www.vishay.com/doc?96317
www.vishay.com/doc?95409
Revision: 22-Feb-18
Document Number: 96425
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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