KRC884T-B,KRC884T-B pdf中文资料,KRC884T-B引脚图,KRC884T-B电路-Datasheet-电子工程世界

KRC884T-B: 产品描述Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN; 产品类别晶体管; 文件大小346KB，共2页; 制造商KEC; 官网地址http://www.keccorp.com/

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KRC884T-B概述

Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN

KRC884T-B规格参数

参数名称	属性值
厂商名称	KEC
包装说明	SMALL OUTLINE, R-PDSO-G6
针数	6
Reach Compliance Code	unknown
ECCN代码	EAR99
Is Samacsys	N
其他特性	BUILT IN BIAS RESISTOR
最大集电极电流 (IC)	0.3 A
集电极-发射极最大电压	20 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	350
JESD-30 代码	R-PDSO-G6
元件数量	2
端子数量	6
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	30 MHz
Base Number Matches	1

KRC884T-B相似产品对比

	KRC884T-B	KRC881T-B	KRC882T-B	KRC883T-B	KRC885T-B	KRC886T-B
描述	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN	Small Signal Bipolar Transistor, 0.3A I(C), 20V V(BR)CEO, 2-Element, NPN, Silicon, TS6, 6 PIN
包装说明	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6	SMALL OUTLINE, R-PDSO-G6
针数	6	6	6	6	6	6
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR	BUILT IN BIAS RESISTOR
最大集电极电流 (IC)	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
集电极-发射极最大电压	20 V	20 V	20 V	20 V	20 V	20 V
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	350	350	350	350	350	350
JESD-30 代码	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6	R-PDSO-G6
元件数量	2	2	2	2	2	2
端子数量	6	6	6	6	6	6
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	NPN	NPN	NPN	NPN	NPN
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES	YES	YES	YES
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
厂商名称	KEC	-	KEC	KEC	KEC	KEC

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