VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 8 A
FEATURES
Base
cathode
2
2
1
3
1
N/C
3
Anode
•
•
•
•
D
2
PAK (TO-263AB)
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
8A
80 V, 100 V
0.58 V
7 mA at 125 °C
175 °C
7.5 mJ
D
2
PAK (TO-263AB)
Single
175 °C T
J
operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-8TQ... Schottky rectifier series has been optimized
for low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
8 A
pk
, T
J
= 125 °C
Range
VALUES
8
80/100
850
0.58
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-8TQ080S-M3
80
VS-8TQ100S-M3
100
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 157 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
8
850
230
7.50
0.50
A
mJ
A
UNITS
A
T
J
= 25 °C, I
AS
= 0.50 A, L = 60 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 02-Nov-17
Document Number: 94946
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
8A
16 A
8A
16 A
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.72
0.88
0.58
0.69
0.55
7
500
8
10 000
mA
pF
nH
V/μs
V
UNITS
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
V
FM (1)
I
RM (1)
C
T
L
S
dV/dt
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style D
2
PAK (TO-263AB)
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
TEST CONDITIONS
VALUES
-55 to +175
2.0
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
8TQ080S
8TQ100S
UNITS
°C
Mounting surface, smooth, and greased
1000
100
T
J
= 175 °C
I
R
- Reverse Current (mA)
10
1
0.1
0.01
0.001
0.0001
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
20
40
60
80
100
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 02-Nov-17
Document Number: 94946
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
1000
Vishay Semiconductors
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10 20 30 40 50 60 70 80 90 100 110
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
0.1
1
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Allowable Case Temperature (°C)
180
7
170
165
160
155
150
145
140
DC
Average Power Loss (W)
175
6
5
4
3
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
Square wave (D = 0.50)
80 % rated V
R
applied
DC
2
1
0
See note (1)
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Revision: 02-Nov-17
Document Number: 94946
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
I
FSM
- Non-Repetitive Surge Current (A)
1000
Vishay Semiconductors
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
8
2
T
3
Q
4
100
5
S
6
TRL -M3
7
8
Vishay Semiconductors product
Current rating (8 A)
Circuit configuration: T = TO-220
Schottky “Q” series
Voltage ratings
S = D
2
PAK (TO-263AB)
None = tube
TRL = tape and reel (left oriented)
TRR = tape and reel (right oriented)
080 = 80 V
100 = 100 V
8
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
Revision: 02-Nov-17
Document Number: 94946
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-8TQ080S-M3, VS-8TQ100S-M3
www.vishay.com
Vishay Semiconductors
QUANTITY PER T/R
50
800
800
50
800
800
MINIMUM ORDER QUANTITY
1000
800
800
1000
800
800
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
13" diameter reel
13" diameter reel
ORDERING INFORMATION
PREFERRED P/N
VS-8TQ080S-M3
VS-8TQ080STRR-M3
VS-8TQ080STRL-M3
VS-8TQ100S-M3
VS-8TQ100STRR-M3
VS-8TQ100STRL-M3
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?96164
www.vishay.com/doc?95444
www.vishay.com/doc?96424
www.vishay.com/doc?96227
Revision: 02-Nov-17
Document Number: 94946
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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