VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 5 A
FEATURES
• 175 °C T
J
operation
• Center tap configuration
• Low forward voltage drop
2
1
3
1
2
3
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical strength and
moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
D
2
PAK (TO-263AB)
Base
common
cathode
2
TO-262AA
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
VS-10CTQ150S-M3
VS-10CTQ150-1-M3
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 175 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
E
AS
Package
Circuit configuration
D
2
PAK
2x5A
150 V
0.93 V
7 mA at 125 °C
175 °C
5 mJ
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
5 A
pk
, T
J
= 125 °C (per leg)
Range
CHARACTERISTICS
Rectangular waveform
VALUES
10
150
620
0.73
-55 to +175
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-10CTQ150S-M3
VS-10CTQ150-1-M3
150
UNITS
V
Revision: 27-Oct-17
Document Number: 95729
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
SYMBOL
TEST CONDITIONS
50 % duty cycle at T
C
= 155 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
T
J
= 25 °C, I
AS
= 1 A, L = 10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Following any rated load
condition and with rated
V
RRM
applied
VALUES
5
10
620
115
5
1
A
mJ
A
UNITS
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current, see fig. 5
per leg
per device
I
F(AV)
Maximum peak one cycle non-repetitive
surge current per leg, see fig. 7
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop per leg
See fig. 1
SYMBOL
5A
V
FM (1)
10 A
5A
10 A
Maximum reverse leakage current per
leg See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.93
1.10
0.73
0.86
0.05
7
0.468
28
200
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per package
Typical thermal resistance,
case to heatsink (only for TO-220)
Approximate weight
Mounting torque
Marking device
minimum
maximum
Case style
D
2
PAK
(TO-263AB)
Case style TO-262AA
SYMBOL
T
J
, T
Stg
TEST CONDITIONS
VALUES
-55 to +175
3.50
R
thJC
DC operation
1.75
R
thCS
Mounting surface, smooth and greased
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
10CTQ150S
10CTQ150-1
Revision: 27-Oct-17
Document Number: 95729
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
100
I
F
- Instantaneous Forward Current (A)
100
I
R
- Reverse Current (mA)
10
1
T
J
= 125 °C
0.1
0.01
0.001
0.0001
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
0
25
50
75
100
T
J
= 175 °C
T
J
= 150 °C
10
T
J
= 175 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.5
1.0
1.5
2.0
2.5
3.0
125
150
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
0
20
40
60
80
100
120
140
160
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
0.001
0.00001
P
DM
t
1
t
2
0.1
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
10
100
0.0001
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 27-Oct-17
Document Number: 95729
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
Vishay Semiconductors
5
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
RMS limit
2
DC
180
Allowable Case Temperature (°C)
170
160
150
140
130
See note (1)
120
0
2
4
Square wave (D = 0.50)
80 % rated V
R
applied
Average Power Loss (W)
4
3
1
0
6
8
0
1
2
3
4
5
6
7
8
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition and
with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 10 V
(1)
Revision: 27-Oct-17
Document Number: 95729
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10CTQ150S-M3, VS-10CTQ150-1-M3
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
10
2
C
3
T
4
Q
5
150
6
S
7
TRL -M3
8
9
Vishay
Semiconductors
product
Current rating (10 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky
“Q”
series
Voltage rating (150 = 150 V)
S
= D
2
PAK (TO-263AB)
-1 = TO-262AA
None = tube (50 pieces)
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-10CTQ150S-M3
VS-10CTQ150STRR-M3
VS-10CTQ150STRL-M3
VS-10CTQ150-1-M3
QUANTITY PER T/R
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D
2
PAK
(TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 95729
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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