VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
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Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 15 A
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
2
1
3
1
2
3
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
TO-262AA
Base
common
cathode
2
D
2
PAK (TO-263AB)
Base
common
cathode
2
• Guard ring for enhanced ruggedness and long term
reliability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• Designed and qualified according to JEDEC
®
-JESD 47
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
DESCRIPTION
The VS-32CTQ... Schottky rectifier series has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
VS-32CTQ...S-M3
VS-32CTQ...-1-M3
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
E
AS
Package
Circuit configuration
D
2
PAK
2 x 15 A
25 V, 30 V
0.40 V
97 mA at 125°C
150 °C
13 mJ
(TO-263AB), TO-262AA
Common cathode
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
15 A
pk
, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform
VALUES
30
25, 30
900
0.40
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-32CTQ025S-M3
VS-32CTQ025-1-M3
25
VS-32CTQ030S-M3
VS-32CTQ030-1-M3
30
UNITS
V
Revision: 27-Oct-17
Document Number: 94936
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
SYMBOL
I
F(AV)
TEST CONDITIONS
50 % duty cycle at T
C
= 115 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
I
FSM
E
AS
I
AR
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
30
900
250
13
3
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
T
J
= 25 °C, I
AS
= 1.20 A, L = 11.10 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
See fig. 1
Maximum reverse leakage current
See fig. 2
Threshold voltage
Forward slope resistance
Maximum junction capacitance per leg
Typical series inductance per leg
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
SYMBOL
15 A
V
FM (1)
30 A
15 A
30 A
I
RM (1)
V
F(TO)
r
t
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated V
R
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
V
R
= Rated V
R
VALUES
0.49
0.58
0.40
0.53
1.75
97
0.233
9.09
1300
8.0
10 000
mA
V
m
pF
nH
V/μs
V
UNITS
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum
maximum
Case style D
2
PAK (TO-263AB)
Marking device
Case style TO-262AA
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
See fig. 4
Mounting surface, smooth and greased
TEST CONDITIONS
VALUES
-55 to +150
3.25
°C/W
0.50
2
0.07
6 (5)
12 (10)
g
oz.
kgf
cm
(lbf
in)
UNITS
°C
32CTQ025S
32CTQ030S
32CTQ025-1
32CTQ030-1
Revision: 27-Oct-17
Document Number: 94936
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
I
F
- Instantaneous Forward Current (A)
Vishay Semiconductors
1000
1000
I
R
- Reverse Current (mA)
100
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
100
1
0.1
0.01
0.001
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
FM
- Forward Voltage Drop (V)
0
5
10
15
20
25
30
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10 000
C
T
- Junction Capacitance (pF)
1000
T
J
= 25 °C
100
0
5
10
15
20
25
30
35
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
t
1
t
2
0.01
Single pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 27-Oct-17
Document Number: 94936
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
160
Vishay Semiconductors
10
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
Allowable Case Temperature (°C)
Average Power Loss (W)
150
140
130
120
110
100
90
8
RMS limit
DC
6
Square wave (D = 0.50)
80 % rated V
R
applied
4
2
See note (1)
80
0
0
5
10
15
20
25
0
5
10
15
20
25
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current
L
High-speed
switch
Freewheel
diode
40HFL40S02
+ V
d
= 25 V
D.U.T.
IRFP460
R
g
= 25
Ω
Current
monitor
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= 80 % rated V
R
Revision: 27-Oct-17
Document Number: 94936
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-32CTQ...S-M3, VS-32CTQ...-1-M3 Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
32
2
C
3
T
4
Q
5
030
6
S
7
TRL -M3
8
9
Vishay Semiconductors product
Current rating (30 A)
Circuit configuration: C = common cathode
T = TO-220
Schottky “Q” series
Voltage ratings
025 = 25 V
030 = 30 V
2
PAK (TO-263AB)
S=D
-1 = TO-262AA
None = tube
TRL = tape and reel (left oriented - for D
2
PAK (TO-263AB) only)
TRR = tape and reel (right oriented - for D
2
PAK (TO-263AB) only)
9
-
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free
ORDERING INFORMATION
PREFERRED P/N
VS-32CTQ025S-M3
VS-32CTQ025STRR-M3
VS-32CTQ025STRL-M3
VS-32CTQ025-1-M3
VS-32CTQ030S-M3
VS-32CTQ030STRR-M3
VS-32CTQ030STRL-M3
VS-32CTQ030-1-M3
QUANTITY PER T/R
50
800
800
50
50
800
800
50
MINIMUM ORDER QUANTITY
1000
800
800
1000
1000
800
800
1000
PACKAGING DESCRIPTION
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
Antistatic plastic tubes
13" diameter reel
13" diameter reel
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
D
2
PAK
(TO-263AB)
TO-262AA
D
2
PAK (TO-263AB)
TO-262AA
www.vishay.com/doc?96164
www.vishay.com/doc?96165
www.vishay.com/doc?95444
www.vishay.com/doc?95443
www.vishay.com/doc?96424
Revision: 27-Oct-17
Document Number: 94936
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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