PD - 94799A
INSULATED GATE BIPOLAR TRANSISTOR
C
IRGB30B60K
IRGS30B60K
IRGSL30B60K
V
CES
= 600V
I
C
= 50A, T
C
=100°C
at T
J
=175°C
Features
•
•
•
•
•
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
G
E
t
sc
> 10µs, T
J
=150°C
n-channel
V
CE(on)
typ. = 1.95V
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220AB
IRGB30B60K
D
2
Pak
IRGS30B60K
TO-262
IRGSL30B60K
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
ISOL
V
GE
P
D
@ T
C
= 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
78
50
120
120
2500
±20
370
180
-55 to +175
Units
V
A
g
RMS Isolation Voltage, Terminal to Case, t=1 min.
Gate-to-Emitter Voltage
Maximum Power Dissipation
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
Operating Junction and
T
J
T
STG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Wt
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.41
–––
62
40
–––
Units
°C/W
d
–––
Junction-to-Ambient (PCB Mount, Steady State)
eÃÃ
–––
–––
–––
g
www.irf.com
1
02/26/04
IRGB/S/SL30B60K
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
∆V
(BR)CES
/∆T
J
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
I
GES
Min. Typ. Max. Units
—
0.40
1.95
2.40
2.6
4.5
-10
18
5.0
1000
1830
—
Conditions
Ref.Fig.
Collector-to-Emitter Breakdown Voltage
600
Temperature Coeff. of Breakdown Voltage
—
—
Collector-to-Emitter Voltage
—
—
Gate Threshold Voltage
3.5
Threshold Voltage temp. coefficient
—
Forward Transconductance
—
—
Zero Gate Voltage Collector Current
—
—
Gate-to-Emitter Leakage Current
—
—
V V
GE
= 0V, I
C
= 500µA
—
V/°C V
GE
= 0V, I
C
= 1mA (25°C-150°C)
I
C
= 30A, V
GE
= 15V, T
J
= 25°C
2.35
2.75
V I
C
= 30A, V
GE
= 15V, T
J
= 150°C
I
C
= 30A, V
GE
= 15V, T
J
= 175°C
2.95
5.5
V V
CE
= V
GE
, I
C
= 250µA
— mV/°C V
CE
= V
GE
, I
C
= 1.0mA (25°C-150°C)
—
S V
CE
= 50V, I
C
= 50A, PW = 80µs
V
GE
= 0V, V
CE
= 600V
250
2000 µA V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
GE
= 0V, V
CE
= 600V, T
J
= 175°C
3000
±100 nA V
GE
= ±20V, V
CE
= 0V
5,6,7
8,9,10
8,9,10
11
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
L
E
C
ies
C
oes
C
res
RBSOA
SCSOA
I
SC
(Peak)
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
Min. Typ. Max. Units
—
102
153
—
14
21
—
44
66
—
350
620
—
825
955
—
1175 1575
—
46
60
—
28
39
—
185
200
—
31
40
—
635 1085
—
1150 1350
—
1785 2435
—
46
60
—
28
39
—
205
235
—
32
42
—
7.5
—
—
1750 2500
—
160
255
—
60
90
FULL SQUARE
10
—
—
200
—
—
nC
Conditions
I
C
= 30A
V
CC
= 400V
V
GE
= 15V
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 25°C
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 25°C
Ref.Fig.
17
CT1
CT4
µJ
f
ns
CT4
µJ
ns
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 150°C
I
C
= 30A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω, L = 200µH
T
J
= 150°C
CT4
12,14
WF1,WF2
13,15
CT4
WF1
WF2
f
nH
pF
µs
A
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 150°C, I
C
= 120A, Vp = 600V
V
CC
=500V,V
GE
= +15V to 0V,R
G
=10Ω
T
J
= 150°C, Vp = 600V, R
G
= 10Ω
V
CC
=360V,V
GE
= +15V to 0V
16
4
CT2
CT3
WF3
WF3
Note
to
are on page 13
2
www.irf.com
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
