PD - 94773
IRG4BC30FD1
Fast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
HYPERFAST DIODE
C
Features
Fast: optimized for medium operating frequencies
(1-5 kHz in hard switching, >20kHz in resonant mode).
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3.
IGBT co-packaged with Hyperfast FRED diodes for ultra low
recovery characteristics.
Industry standard TO-220AB package.
G
E
V
CES
= 600V
V
CE(on) typ.
=
1.59V
@V
GE
= 15V, I
C
= 17A
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available.
IGBT's optimized for specific application conditions.
FRED diodes optimized for performance with IGBT's.
Minimized recovery characteristics require less / no
snubbing.
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Max.
600
31
17
120
120
8
16
±20
100
42
-55 to +150
Units
V
A
d
c
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
W
P
D
@ T
C
= 100°C Maximum Power Dissipation
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal / Mechanical Characteristics
Parameter
R
θJC
R
θJC
R
θCS
R
θJA
Wt
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0 (0.07)
Max.
1.2
2.0
–––
80
–––
Units
°C/W
g (oz.)
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1
09/03/03
IRG4BC30FD1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage
e
Min. Typ. Max. Units
600
—
—
—
—
3.0
—
0.69
1.59
1.99
1.7
—
-11
10
—
—
2.0
1.3
—
—
—
1.8
—
—
6.0
—
—
250
2500
2.4
1.8
±100
nA
V
V
V
Conditions
V
GE
= 0V, I
C
= 250µA
V
GE
= 15V
See Fig. 2, 5
V/°C V
GE
= 0V, I
C
= 1mA
I
C
= 17A
V
I
C
= 31A
I
C
= 17A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250µA
mV/°C V
CE
= V
GE
, I
C
= 250µA
S V
CE
= 100V, I
C
= 17A
µA
V
GE
= 0V, V
CE
= 600V
V
CE(on)
V
GE(th)
∆V
GE(th)
/∆T
J
gfe
I
CES
V
FM
I
GES
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
f
—
6.1
—
—
—
—
—
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
F
= 8.0A
I
F
= 8.0A, T
J
= 150°C
V
GE
= ±20V
See Fig. 13
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
di
(rec)M
/dt
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
b
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
57
10
21
22
24
250
160
370
1420
1800
21
25
400
340
3280
7.5
1170
100
11
46
85
4.8
8.5
110
410
260
270
62
12
24
—
—
320
210
—
—
2290
—
—
—
—
—
—
—
—
—
61
93
6.5
10
190
550
—
—
nC
A
ns
pF
µJ
nH
ns
T
J
= 150°C
µJ
ns
nC
I
C
= 17A
V
CC
= 400V
V
GE
= 15V
T
J
= 25°C
Conditions
See Fig. 8
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23Ω
Energy losses inlcude "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
See Fig. 9,10,11,18
I
C
= 17A, V
CC
= 480V
V
GE
= 15V, R
G
= 23Ω
Energy losses inlcude "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
f = 1.0MHz
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
See Fig.
14
See Fig.
15
See Fig.
16
See Fig.
17
di/dt 200A/µs
V
R
= 200V
I
F
= 12A
See Fig. 7
A/µs T
J
= 25°C
T
J
= 125°C
2
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IRG4BC30FD1
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
Fig. 1
- Typical Load Current vs. Frequency
1000
1000
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 25°C
I
C
, Collector-to-Emitter Current (A)
100
T
J
= 150°C
T
J
= 150°C
T
J
= 25°C
10
10
1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
1
5
6
7
8
9
V
CC
= 50V
5µs PULSE WIDTH
A
10
11
12
13
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
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Fig. 3
- Typical Transfer Characteristics
3
IRG4BC30FD1
40
V
GE
= 15V
2.5
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 34A
Maximum DC Collector Current (A)
30
2.0
20
I
C
= 17A
1.5
10
I
C
= 8.5A
0
25
50
75
100
125
150
1.0
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs. Case
Temperature
Fig. 5
- Typical Collector-to-Emitter Voltage
vs. Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30FD1
2000
1800
1600
C oes = C ce + C gc
VGE, Gate-to-Emitter Voltage (V)
VGS = 0V,
f = 1 MHZ
C ies = C ge + C gd, C ce SHORTED
C res = C gc
14
12
10
8
6
4
2
0
V
= 400V
CC
IC = 17A
Capacitance (pF)
1400
1200
1000
800
600
400
200
0
1
10
100
1000
Cies
Coes
Cres
0
10
20
30
40
50
60
VCE, Collector-toEmitter-Voltage(V)
Q G, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
2000
VCE = 480V
VGE = 15V
9000
8000
RG =
22Ω
Ã
IC = 34A
Total Swiching Losses (mJ)
Total Swiching Losses (mJ)
1900
TJ = 25°C
I C = 17A
7000
6000
5000
4000
3000
2000
1000
VGE = 15V
VCC = 480V
1800
IC = 17A
IC = 8.5A
1700
1600
0
10
20
30
40
50
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
RG, Gate Resistance (Ω)
T J, Juntion Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
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Fig. 10
- Typical Switching Losses vs.
Junction Temperature
5
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