PD - 95810
AUTOMOTIVE MOSFET
IRFP1405
HEXFET
®
Power MOSFET
D
Features
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
V
DSS
= 55V
G
S
R
DS(on)
= 5.3mΩ
I
D
= 95A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D
G
TO-247AC
S
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally limited)
E
AS
(Tested )
I
AR
E
AR
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
Pulsed Drain Current
Max.
160
110
95
640
310
2.0
± 20
530
1060
See Fig.12a, 12b, 15, 16
-55 to + 175
Units
A
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
W
W/°C
V
mJ
A
mJ
°C
d
Ã
h
g
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf in (1.1N m)
Thermal Resistance
Parameter
R
θJC
R
θcs
R
θJA
Junction-to-Case *
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient *
y
y
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
°C/W
HEXFET
®
is a registered trademark of International Rectifier.
*
R
θ
is measured at T
J
approximately 90°C
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1
12/22/03
IRFP1405
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
55
–––
–––
2.0
77
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.058
4.2
–––
–––
–––
–––
–––
–––
120
30
53
12
160
140
150
5.0
13
5600
1310
350
6550
920
1750
–––
–––
5.3
4.0
–––
20
250
200
-200
180
–––
–––
–––
–––
–––
–––
–––
nH
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
nA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 95A
e
V
S
µA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 95A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 95A
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 95A
R
G
= 2.6
Ω
V
GS
= 10V
e
e
D
G
S
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
f
Source-Drain Ratings and Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
70
170
95
A
640
1.3
110
260
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 95A, V
GS
= 0V
T
J
= 25°C, I
F
= 95A, V
DD
= 28V
di/dt = 100A/µs
Ã
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH
R
G
= 25Ω, I
AS
= 95A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
2
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IRFP1405
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
≤
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
10
0.1
0
≤
60µs PULSE WIDTH
Tj = 175°C
1
10
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
140
Gfs, Forward Transconductance (S)
ID, Drain-to-Source Current
(Α)
T J = 25°C
T J = 175°C
120
100
80
T J = 25°C
100
T J = 175°C
60
40
20
0
0
20
40
60
80
100
ID, Drain-to-Source Current (A)
VDS = 10V
380µs PULSE WIDTH
VDS = 25V
≤
60µs PULSE WIDTH
10
4.0
5.0
6.0
7.0
8.0
9.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
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3
IRFP1405
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
20
ID= 95A
VGS, Gate-to-Source Voltage (V)
8000
16
VDS= 44V
VDS= 28V
C, Capacitance (pF)
6000
Ciss
12
4000
8
Coss
2000
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
100
0
0
40
80
120
160
200
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ISD, Reverse Drain Current (A)
ID, Drain-to-Source Current (A)
100.0
T J = 175°C
1000
100
100µsec
10.0
T J = 25°C
1.0
VGS = 0V
0.1
0.2
0.6
1.0
1.4
1.8
2.2
VSD, Source-toDrain Voltage (V)
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
1msec
10msec
DC
100
1000
0.1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFP1405
200
LIMITED BY PACKAGE
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
ID = 95A
VGS = 10V
2.0
ID , Drain Current (A)
150
100
1.5
50
1.0
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
1
D = 0.50
Thermal Response ( Z thJC )
0.1
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
τ
C
τ
1
τ
2
τ
0.01
0.02
0.01
τ
J
Ri (°C/W)
τi
(sec)
0.2529 0.00080
0.2368 0.014283
0.001
Ci=
τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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