PD - 94757A
IRF3711Z
IRF3711ZS
IRF3711ZL
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max
20V
6.0m
:
Qg
16nC
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRF3711Z
D
2
Pak
IRF3711ZS
TO-262
IRF3711ZL
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
20
Units
V
A
h
65
h
92
380
79
40
0.53
-55 to + 175
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
W
W/°C
°C
f
300 (1.6mm from case)
10 lbf in (1.1N m)
y
y
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
i
Typ.
Max.
1.89
–––
62
40
Units
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
fiÃ
f
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
gi
Notes
through
are on page 12
www.irf.com
1
10/30/03
IRF3711Z/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
46
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.013
4.8
5.9
2.0
-5.6
–––
–––
–––
–––
–––
16
4.6
1.4
5.3
4.7
6.7
9.5
12
16
15
5.4
2150
680
320
–––
–––
6.0
7.3
2.45
–––
1.0
150
100
-100
–––
24
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 10V
ns
nC
nC
V
DS
= 10V
V
GS
= 4.5V
I
D
= 12A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
e
= 12A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
See Fig. 16
V
DS
= 10V, V
GS
= 0V
V
DD
= 10V, V
GS
= 4.5V
I
D
= 12A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
130
12
7.9
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
16
6.0
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
92
h
Conditions
MOSFET symbol
D
A
380
1.0
24
9.0
V
ns
nC
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
DD
= 10V
di/dt = 100A/µs
e
e
2
www.irf.com
IRF3711Z/S/L
1000
1000
VGS
TOP
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
3.0V
10
3.0V
10
60µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
60µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current
(Α)
T J = 25°C
T J = 175°C
ID = 30A
VGS = 10V
100
1.5
10
(Normalized)
1.0
VDS = 10V
60µs PULSE WIDTH
1
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF3711Z/S/L
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
ID= 12A
VGS, Gate-to-Source Voltage (V)
10
8
6
4
2
0
VDS= 15V
VDS= 10V
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
1
10
100
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.0
T J = 175°C
10.0
1000
100
100µsec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
1msec
10msec
100
1.0
T J = 25°C
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
2.5
VSD, Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRF3711Z/S/L
100
LIMITED BY PACKAGE
80
ID , Drain Current (A)
2.4
VGS(th) Gate threshold Voltage (V)
2.0
60
1.6
ID = 250µA
40
1.2
20
0.8
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.4
-75 -50 -25
0
25
50
75 100 125 150 175 200
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.894
0.000306
0.600
0.401
0.001019
0.006662
τ
1
τ
2
0.01
Ci=
τi/Ri
Ci=
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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