PD - 95821
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
HEXFET
®
Power MOSFET
IRL8113
IRL8113S
IRL8113L
V
DSS
R
DS(on)
max Qg (Typ.)
30V
6.0m:
23nC
Benefits
l
Low R
DS(on)
at 4.5V V
GS
l
Low Gate Charge
l
Fully Characterized Avalanche Voltage
and Current
TO-220AB
IRL8113
D
2
Pak
IRL8113S
TO-262
IRL8113L
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
30
105
Units
V
A
c
h
74
h
420
110
57
± 20
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
W
0.76
-55 to + 175
W/°C
°C
f
300 (1.6mm from case)
10 lbf in (1.1N m)
y
y
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
R
θJA
Junction-to-Case
i
Typ.
Max.
1.32
–––
62
40
Units
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
fi
f
–––
0.50
–––
–––
Junction-to-Ambient (PCB Mount)
gi
Notes
through
are on page 12
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1
1/6/04
IRL8113/S/L
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
86
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-5.0
–––
–––
–––
–––
–––
23
6.0
2.0
8.3
6.7
10
14
14
38
18
5.0
2840
620
290
–––
0.020
4.8
5.7
–––
–––
6.0
7.1
2.25
–––
1.0
150
100
-100
–––
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
V
GS
= 0V
V
DS
= 15V
ns
nC
nC
V
DS
= 15V
V
GS
= 4.5V
I
D
= 17A
S
nA
V
mV/°C
µA
V
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 21A
V
GS
= 4.5V, I
D
e
= 17A
e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 15V, I
D
= 17A
See Fig. 16
V
DS
= 16V, V
GS
= 0V
V
DD
= 15V, V
GS
= 4.5V
I
D
= 17A
Clamped Inductive Load
e
ƒ = 1.0MHz
Avalanche Characteristics
E
AS
I
AR
E
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
–––
Max.
220
17
11
Units
mJ
A
mJ
Repetitive Avalanche Energy
–––
–––
–––
–––
–––
–––
–––
–––
18
7.2
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
105
h
Conditions
MOSFET symbol
D
A
420
1.0
27
11
V
ns
nC
Ã
showing the
integral reverse
G
S
p-n junction diode.
T
J
= 25°C, I
S
= 17A, V
GS
= 0V
T
J
= 25°C, I
F
= 17A, V
DD
= 15V
di/dt = 100A/µs
e
e
2
www.irf.com
IRL8113/S/L
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
1000
TOP
VGS
10V
9.0V
7.0V
5.0V
4.5V
4.0V
3.5V
3.0V
ID, Drain-to-Source Current (A)
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
100
3.0V
3.0V
≤
60µs PULSE WIDTH
Tj = 25°C
10
0.1
1
10
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current
(Α)
ID = 42A
VGS = 10V
100
1.5
T J = 175°C
10
T J = 25°C
1.0
VDS = 10V
≤
60µs PULSE WIDTH
1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRL8113/S/L
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
12
ID= 17A
VGS, Gate-to-Source Voltage (V)
10
8
6
4
2
0
VDS= 24V
VDS= 15V
C, Capacitance (pF)
10000
Ciss
1000
Coss
Crss
100
1
10
100
0
10
20
30
40
50
60
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0
T J = 175°C
100
100µsec
10.0
10
1.0
T J = 25°C
VGS = 0V
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1.0
10.0
1msec
10msec
100.0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, Source-to-Drain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
IRL8113/S/L
120
LIMITED BY PACKAGE
100
ID , Drain Current (A)
2.5
VGS(th) Gate threshold Voltage (V)
2.0
80
60
40
20
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
1.5
ID = 250µA
1.0
0.5
-75
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Threshold Voltage vs. Temperature
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
0.01
0.02
0.01
τ
J
Ri (°C/W)
τi
(sec)
0.430
0.000266
0.397
0.493
0.000685
0.007393
τ
1
τ
2
0.001
Ci=
τi/Ri
Ci=
τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
0.0001
1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
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