N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 100 Volt V
DS
* R
DS(on)
= 1.5Ω
* Spice model available
ZVN4210A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
amb
=25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
100
450
6
±
20
700
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
SYMBOL MIN.
BV
DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
250
100
40
12
4
8
20
30
2.5
1.5
1.8
100
0.8
2.4
100
10
100
MAX. UNIT CONDITIONS.
V
V
nA
µA
µA
A
Ω
mS
pF
pF
pF
ns
ns
ns
ns
V
DD
≈25V,
I
D
=1.5A
V
DS
=25V, V
GS
=0V, f=1MHz
I
D
=1mA, V
GS
=0V
ID=1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=100V, V
GS
=0
V
DS
=80V, V
GS
=0V, T=125°C
(2)
V
DS
=25V, V
GS
=10V
V
GS
=10V,I
D
=1.5A
V
GS
=5V,I
D
=500mA
V
DS
=25V,I
D
=1.5A
Forward Transconductance(1)(2 g
fs
)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
3-388
ZVN4210A
TYPICAL CHARACTERISTICS
RDS(on)-Drain Source On Resistance
(Ω)
100
V
GS
=3V 3.5V
5V 6V 8V 10V
V
GS=
10V
9V
8V
7V
6V
5V
4V
3.5V
3V
2.5V
2V
10
5
I
D
- Drain Current (Amps)
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
1
0.1
1.0
10
V
DS
- Drain Source
Voltage (Volts)
I
D-
Drain Current
(Amps)
Saturation Characteristics
On-resistance v drain current
2.6
1000
900
Normalised R
DS(on)
and V
GS(th)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
-50 -25
0
g
fs
-Transconductance (mS)
e
rc
ou
S
n-
ai
V
GS=
V
DS
Dr
Gate
I
D=
1mA
Thres
hold V
oltage
V
GS(TH
)
Re
sis
e
nc
ta
R
n)
(o
DS
V
GS=
10V
I
D=
1.5A
800
700
600
500
400
300
200
100
0
0
1
2
3
4
5
V
DS=
10V
25 50 75 100 125 150 175 200 225
T
j
-Junction Temperature (°C)
I
D(on)
- Drain Current (Amps)
Normalised R
DS(on)
and V
GS(th)
v Temperature
Transconductance v drain current
16
V
GS
-Gate Source Voltage (Volts)
200
V
DD
=
20V 50V
80V
I
D=
1.5A
14
12
10
8
6
4
2
0
0
C-Capacitance (pF)
160
120
80
C
iss
40
0
C
oss
C
rss
100
0
20
40
60
80
1
2
3
4
5
6
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-389
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