N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 90 Volt V
DS
* Low input capacitance
* Fast switching
ZVN1409A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
DS
I
D
I
DM
V
GS
P
tot
T
j
:T
stg
VALUE
90
10
40
±
20
625
-55 to +150
UNIT
V
mA
mA
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Drain-Source Breakdown
Voltage
Gate-Source Breakdown
Voltage
Gate Body Leakage
Zero Gate Voltage Drain
Current
On State Drain Current (1)
Static Drain Source On State
Resistance (1)
SYMBOL
BV
DSS
V
GS(th)
I
GSS
I
DSS
MIN.
90
0.8
2.4
100
MAX.
UNIT
V
V
nA
CONDITIONS.
I
D
=0.1mA, V
GS
=0V
ID=0.1mA, V
DS
= V
GS
V
GS
=± 20V, V
DS
=0V
V
DS
=90V, V
GS
=0V
V
DS
=72V, V
GS
=0V,
T=125°C
V
DS
=25 V, V
GS
=10V
V
GS
=10V,I
D
=5mA
V
DS
=25V,I
D
=10mA
1
µA
100 (2)
µA
10
250
2
6.5
3
0.65
0.3
0.5
0.35
0.5
mA
Ω
mS
pF
pF
pF
ns
ns
ns
ns
I
D(on)
R
DS(on)
Forward Transconductance (1)( g
fs
2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)(4)
Rise Time (2)(3)(4)
Turn-Off Delay Time (2)(3)(4)
Fall Time (2)(3)(4)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=25 V, V
GS
=0V
f=1MHz
V
DD
≈25V,
I
D
=5mA
3-358
(
1
ZVN1409A
TYPICAL CHARACTERISTICS
70
60
V
GS=
10V
8V
40
30
20
10
6V
5V
4V
3V
0
0
10
20
30
40
50
0
2
4
6
8
10
50
V
GS=
10V
8V
I
D
-Drain Current (mA)
50
I
D
-Drain Current (mA)
40
30
6V
5V
4V
3V
20
10
V
DS
- Drain Source
Voltage (Volts)
V
DS
- Drain Source
Voltage (Volts)
Output Characteristics
Saturation Characteristics
10
50
V
DS-
Drain Source
Voltage (Volts)
I
D
-Drain Current (mA)
8
40
V
DS=
10V
6
30
20
10
4
I
D=
24mA
18mA
12mA
2
0
2
4
6
8
10
0
2
4
6
8
10
V
GS-
Gate Source Voltage
(Volts)
V
GS-
Gate Source
Voltage (Volts)
Voltage Saturation Characteristics
Transfer Characteristics
V
GS
=4V 5V
6V 8V 10V
2.4
R
DS
-Drain Source Resistance
(Ω)
1000
Normalised R
DS(on)
and V
GS(th)
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-80 -60 -40 -20
D
eR
nc
ta
V
GS=
10V
sis
Re
I
D=
5mA
ce
r
ou
-S
ain
V
GS=
V
DS
Dr
I
D=
1mA
)
on
S(
500
Gate Thresh
old
Voltage V
GS
(th
)
100
1
10
100
0 20 40 60 80 100 120 140 160
I
D-
Drain Current
(mA)
T
j
-Junction Temperature (C°)
On-resistance v drain current
Normalised R
DS(on)
and V
GS(th)
vs Temperature
3-359
ZVN1409A
TYPICAL CHARACTERISTICS
10
10
g
fs
-Transconductance (mS)
g
fs
-Transconductance (mS)
8
6
4
2
0
0
10
20
30
40
50
V
DS=
10V
8
6
4
2
0
0
2
4
6
V
DS=
10V
8
10
I
D(on)
- Drain Current (mA)
V
GS
-Gate Source Voltage (Volts)
Transconductance v drain current
Transconductance v gate-source voltage
16
V
GS
-Gate Source Voltage (Volts)
10
8
6
4
2
0
0
10
20
30
40
50
C
rss
14
12
10
8
6
4
2
0
0
I
D=
25mA
V
DS
= 30V
60V
90V
C-Capacitance (pF)
C
oss
C
iss
0.1
0.2
0.3
0.4
0.5
0.6
V
DS
-Drain Source Voltage (Volts)
Q-Charge (nC)
Capacitance v drain-source voltage
Gate charge v gate-source voltage
3-360
stm32/stm8
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