BCW31
BCW31
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector
currents to 300mA.
• Sourced from process 10.
3
2
1
SOT-23
Mark: D1
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings *
T
a
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current (DC)
Operating and Storage Junction Temperature Range
Value
32
32
5.0
500
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
Parameter
Test Condition
I
C
= 2.0mA, I
B
= 0
I
C
= 10µA, I
B
= 0
I
C
= 10µA, I
C
= 0
V
CB
= 32V, I
E
= 0
V
CB
= 32V, I
E
= 0, T
A
= 100°C
I
C
= 2.0mA, V
CE
= 5.0V
I
C
= 10mA, I
B
= 0.5mA
I
C
= 2.0mA, V
CE
= 5.0V
I
C
= 2.0mA, V
CE
= 5.0V
f = 35MHz
V
CB
= 10V, I
E
= 0, f = 1.0MHz
I
C
= 0.2mA, V
CE
= 5.0V
R
S
= 2.0kΩ, f = 1.0kHz
B
W
= 200Hz
0.55
200
4.0
10
pF
dB
110
Min.
32
32
5.0
100
10
220
0.25
0.7
V
V
Typ.
Max.
Units
V
V
V
nA
µA
Off Characteristics
Collector-Base Breakdown Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
On Characteristics
h
FE
V
CE(sat)
V
BE(on)
f
T
C
obo
NF
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Small Signal Characteristics
Thermal Characteristics
T
A
=25°C unless otherwise noted
Symbol
P
D
R
θJA
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Parameter
Max.
350
2.8
357
Units
mW
mW/°C
°C/W
Device mounted on FR-4PCB 40mm
×
40mm
×
1.5mm
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
BCW31
Typical Characteristics
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
400
Vce = 5V
캜
125
°C
0.4
β
= 10
0.3
C
25
°
캜
300
캜
25
°C
200
캜
- 40
°C
0.2
C
125
°
캜
100
0.1
- 40
°
캜
C
0
10
20 30
50
100
200 300
I
C
- COLLECTOR CURRENT (mA)
500
1
10
100
I
C
- COLLECTOR CURRENT (mA)
400
Figure 1. Typical Pulsed Current Gain vs
Collector Current
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
V
BESAT
- COLLECTOR-EMITTER VOLTAGE (V)
1
0.8
0.6
0.4
0.2
0.1
1
10
100
I
C
- COLLECTOR CURRENT (mA)
300
C
- 40
°
캜
V
BEON
- BASE-EMITTER ON VOLTAGE (V)
1
0.8
0.6
0.4
V
CE
= 5V
0.2
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
C
- 40
°
캜
C
25
°
캜
125
°
캜
C
캜
25
°
C
125
C
°
캜
β
= 10
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Figure 4. Base-Emitter On Voltage
vs Collector Current
I
CBO
- COLLECTOR CURRENT (nA)
10
V
CB
= 60V
CAPACITANCE (pF)
100
f = 1.0 MHz
10
Cib
Cob
1
1
0.1
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
0.1
0.1
1
10
V
ce
- COLLECTOR VOLTAGE (V)
100
Figure 5. Collector-Cutoff Current
vs Ambient Temperature
Figure 6. Input and Outtput Capacitance
vs Reverse Voltage
©2002 Fairchild Semiconductor Corporation
Rev. B1, August 2002
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
stm32/stm8
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