STP190NF04
STB190NF04 - STB190NF04-1
N-channel 40V - 0.0039Ω - 120A - D
2
PAK/I
2
PAK/TO-220
STripFET™ III Power MOSFET
General features
Type
STP190NF04
STB190NF04
STB190NF04-1
■
■
V
DSS
40V
40V
40V
R
DS(on)
<0.0043Ω
<0.0043Ω
<0.0043Ω
I
D
120A
120A
120A
TO-220
1
2
3
Standard threshold drive
100% avalanche tested
Description
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
■
Switching application
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schematic diagram
b
Internal
O
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2
PAK
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3
12
D
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3
1
Order codes
Part number
STB190NF04T4
STB190NF04-1
STP190NF04
Marking
B190NF04
B190NF04
P190NF04
Package
D
2
PAK
I
2
PAK
TO-220
Packaging
Tape & reel
Tube
Tube
August 2006
Rev 2
1/16
www.st.com
16
Contents
STP190NF04 - STB190NF04 - STB190NF04-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STP190NF04 - STB190NF04 - STB190NF04-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D(1)
I
D
(1)
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at
T
C
= 25°C
Drain current (continuous) at
T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
40
40
± 20
120
120
480
Unit
V
V
V
I
DM(2)
P
tot
dv/dt
(3)
E
AS (4)
T
stg
T
j
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction
temperature
1. Value limited by package
2. Pulse width limited by safe operating area.
3. I
SD
≤
190A, di/dt
≤
600A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
4. Starting T
j
= 25 °C, I
D
= 95A, V
DD
= 35V
b
O
et
l
so
Table 2.
Rthj-case
Rthj-amb
T
J
ro
P
e
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d
s)
t(
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so
b
t
le
P
e
2.07
7
860
310
ro
uc
d
s)
t(
A
A
W
W/°C
V/ns
mJ
A
-55 to 175
°C
Thermal data
Thermal resistance junction-case max
0.48
50
300
°C/W
°C/W
°C
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
(1)
1. for 10 sec. 1.6mm from case
3/16
Electrical characteristics
STP190NF04 - STB190NF04 - STB190NF04-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= max ratings
V
DS
= max ratings,
T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 95A
Min.
40
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward
transconductance
bs
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et
l
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ro
P
e
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
uc
d
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t(
O
-
Test conditions
so
b
te
le
r
P
Min.
2
d
o
Typ.
200
5800
1500
200
45
380
100
75
130
40
45
uc
±100
4
s)
t(
0.0039
0.0043
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V
,
I
D
= 95A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 20V, I
D
= 95A
R
G
= 4.7Ω V
GS
= 10V
(see
Figure 15)
V
DD
= 20V, I
D
= 190A,
V
GS
= 5V
(see
Figure 16)
Total gate charge
Gate-source charge
Gate-drain charge
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/16
STP190NF04 - STB190NF04 - STB190NF04-1
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 120A, V
GS
= 0
90
295
6.5
Test conditions
Min.
Typ.
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
I
SD
= 190A,
Reverse recovery time
di/dt = 100A/µs,
Reverse recovery charge
V
DD
= 34V, T
j
= 150°C
Reverse recovery current
(see
Figure 17)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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NXP MCU
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