STP200NF03
STB200NF03 - STB200NF03-1
N-channel 30V - 0.0032Ω - 120A - D
2
PAK/I
2
PAK/TO-220
STripFET™ III Power MOSFET
General features
Type
STP200NF03
STB200NF03
STB200NF03-1
V
DSS
30V
30V
30V
R
DS(on)
<0.0037Ω
<0.0037Ω
<0.0037Ω
I
D
120A
(1)
120A
(1)
120A
(1)
TO-220
1
2
3
3
1
D
2
PAK
1. Current Limited by Package
■
■
Standard threshold drive
100% avalanche tested
I
2
PAK
3
12
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB200NF03T4
STB200NF03-1
STP200NF03
Marking
B200NF03
B200NF03
P200NF03
Package
D
2
PAK
I
2
PAK
TO-220
Packaging
Tape & reel
Tube
Tube
February 2007
Rev 4
1/18
www.st.com
18
Contents
STP200NF03 - STB200NF03 - STB200NF03-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
7
Spice thermal model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packaging mechanical data
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
2/18
STP200NF03 - STB200NF03 - STB200NF03-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D(1)
I
D(1)
I
DM(2)
P
tot
dv/dt
(3)
E
AS (4)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at
T
C
= 25°C
Drain current (continuous) at
T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction
temperature
-55 to 175
°C
Value
30
30
± 20
120
120
480
300
2.0
1.5
1.45
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
1. Value limited by package
2. Pulse width limited by safe operating area.
3. I
SD
≤
120A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
4. Starting T
j
= 25 °C, I
D
= 60A, V
DD
= 25V
Table 2.
Rthj-case
Rthj-amb
Rthj-pcb
T
J
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb
Maximum lead temperature for soldering purpose
(1)
0.5
62.5
see curve
13
and
14
300
°C
°C/W
°C/W
1. for 10 sec. 1.6mm from case
3/18
Electrical characteristics
STP200NF03 - STB200NF03 - STB200NF03-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= max ratings
V
DS
= max ratings,
T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 60A
2
0.0032
Min.
30
1
10
±100
4
0.0036
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 15V
,
I
D
= 60A
Min.
Typ.
200
4950
1750
280
30
195
75
60
113
32
41
140
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DS
= 25V, f = 1MHz,
V
GS
= 0
V
DD
= 15V, I
D
= 60A
R
G
= 4.7Ω V
GS
= 10V
(see
Figure 19)
V
DD
= 24V, I
D
= 120A,
V
GS
= 10V
(see
Figure 20)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/18
STP200NF03 - STB200NF03 - STB200NF03-1
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 120A, V
GS
= 0
70
170
5
Test conditions
Min.
Typ.
Max.
120
480
1.3
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
I
SD
= 120A,
Reverse recovery time
di/dt = 100A/µs,
Reverse recovery charge
V
DD
= 25V, T
j
= 150°C
Reverse recovery current
(see
Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/18
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