STB70NFS03L
N-channel - 30V - 0.0075Ω - 70A D
2
PAK
STripFET™ Power MOSFET plus schottky rectifier
General features
Type
STB70NFS03L
Schottky
V
DSS
30V
I
F(AV)
3A
R
DS(on)
<0.0095Ω
V
RRM
30V
I
D
70A
V
F(MAX)
0.51V
1
3
Description
This product associates a Power MOSFET of the
third genaration of STMicroelectronics unique
“Single Feature Size” strip-based process and a
low drop schottky diode. The transistor shows the
best trade-off between on-resistance and gate
charge. Used as low side in buck regulators, the
product is the solution in terms of conduction
losses and space saving.
D²PAK
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB70NFS03L
Marking
B70NFS03L
Package
D²PAK
Packaging
Tape & reel
July 2006
Rev 9
1/13
www.st.com
13
Contents
STB70NFS03L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuits
.............................................. 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB70NFS03L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
Mosfet absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Value
30
± 18
70
50
280
100
0.67
5.5
500
-55 to 175
Operating junction temperature
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
dv/dt
(2)
Peak diode recovery voltage slope
E
AS (3)
T
stg
T
J
Single pulse avalanche energy
Storage temperature
1. Pulse width limited by safe operating area
2. I
SD
< 70A, di/dt < 350A/µs, V
DD
= 80% V
(BR)DSS
3. Starting Tj = 25°C, V
DD
= 25V
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
dv/dt
Schottky absolute maximum ratings
Parameter
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Critical rate of rise of reverse voltage
T
L
=125°C
δ=0.5
tp=10ms
Sinusoidal
Value
30
20
3
75
10000
Unit
V
A
A
A
v/µs
Table 3.
Symbol
Thermal data
Parameter
Value
1.5
62.5
300
Unit
°C/W
°C/W
°C
Rthj-amb Thermal resistance junction-amb max
Rthj-case Thermal resistance junction-case max
T
l
Maximum lead temperature for soldering purpose
3/13
Electrical characteristics
STB70NFS03L
2
Electrical characteristics
(Tcase =25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On /off states
Parameter
Drain-source
breakdown voltage
Test conditions
I
D
= 250µA, V
GS
= 0
Min.
30
200
20
± 100
1
0.0075 0.0095
0.0135 0.018
Typ.
Max.
Unit
V
µA
mA
nA
V
Ω
Ω
V
DS
= Max rating
Zero gate voltage
drain current (V
GS
= 0) V
DS
= Max rating, T
C
=125°C
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 18V
Gate threshold voltage V
DS
= V
GS
, I
D
= 250µA
Static drain-source on
resistance
V
GS
= 10V, I
D
= 35A
V
GS
= 5V, I
D
= 18A
Table 5.
Symbol
I
R
V
F
Shottcky static
Parameter
Reverse leakage
current
Test conditions
T
j
= 25°C V
R
= 30V
T
j
= 100°C V
R
= 30V
Min.
Typ.
Max.
0.2
100
0.51
0.46
Unit
mA
mA
V
V
0.03
0.425
T
j
= 25°C I
F
= 3A
Zero gate voltage
drain current (V
GS
= 0) T
j
= 125°C I
F
= 3A
Table 6.
Symbol
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
= 25V, I
D
= 35A
Min.
Typ.
25
1440
560
135
22.5
9
12
30
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
V
DD
= 15V, I
D
= 70A,
V
GS
= 5V
(see
Figure 11)
4/13
STB70NFS03L
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test Conditions
V
DD
= 15V, I
D
= 35A,
R
G
= 4.7Ω, V
GS
= 5V
(see
Figure 10)
V
DD
= 15V, I
D
= 35A,
R
G
= 4.7Ω, V
GS
= 5V
(see
Figure 10)
Min.
Typ.
22
165
21
25
Max Unit
ns
ns
ns
ns
Table 8.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 70A, V
GS
= 0
I
SD
= 70A, di/dt = 100A/µs
V
DD
= 20V, T
j
= 150°C
(see
Figure 15)
42
52
2.5
Test Conditions
Min.
Typ.
Max. Unit
70
280
1.3
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/13
stm32/stm8
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