STB75NH02L
N-Channel 24V - 0.0062Ω - 60A - D
2
PAK
STripFET™ III Power MOSFET
General features
Type
STB75NH02L
V
DSS
24V
R
DS(on)
<0.008Ω
I
D
60A
(1)
3
1
1. Limited by package
■
■
■
■
R
DS(ON)
* Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
D
2
PAK
Description
The device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Internal schematic diagram
Applications
■
Switching application
Order
O
codes
Part number
STB75NH02LT4
Marking
B75NH02L
Package
D²PAK
Packaging
Tape & Reel
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July 2006
Rev 3
1/13
www.st.com
13
Contents
STB75NH02L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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2/13
STB75NH02L
Electrical ratings
1
Table 1.
Electrical ratings
Absolute maximum ratings
Parameter
Drain-source voltage rating
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
E
AS (5)
T
J
T
stg
Single pulse avalanche energy
Operating junction temperature
storage temperature
Value
30
24
± 20
60
53
240
80
0.53
360
-55 to 175
Unit
V
V
V
A
A
A
Symbol
V
spike (1)
V
DS
V
GS
I
D (2)
I
D
I
DM (3)
P
TOT (4)
1. Garanted when external Rg = 4.7Ω and t
f
< t
fmax
2. Value limited by wire bonding
3. Pulse width limited by safe operating area
4. This value is rated according to R
thJC
5. Starting T
J
=25°C, Id = 30A, Vdd = 15V
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-amb max
Maximum lead temperature for soldering
purpose
O
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Value
1.88
62.5
300
od
r
s)
t(
uc
mJ
°C
W
W/°C
Unit
°C/W
°C/W
°C
3/13
Electrical characteristics
STB75NH02L
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 25 mA, V
GS
= 0
V
DS
= 20 V,
V
DS
= 20 V,Tc = 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 30 A
V
GS
= 5 V, I
D
= 30 A
1
1.8
0.0062
0.008
Min.
24
1
10
±
100
Typ.
Max.
Unit
V
µA
µA
nA
V
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
G
Dynamic
Parameter
Forward Transconductance
Test conditions
V
DS
=10V, I
D
= 18A
Input Capacitance
V
DS
=15V, f=1 MHz, V
GS
=0
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Input Resistance
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 5.
O
so
b
Symbol
t
d(on)
t
r
t
d(off)
t
f
te
le
Switching times
Parameter
Test conditions
V
DD
=10 V, I
D
=30 A,
R
G
=4.7Ω, V
GS
=10V
Figure 15
V
DD
=10 V, I
D
=30A,
R
G
=4.7Ω, V
GS
=10V
Figure 15
Min.
Typ.
12
200
Max.
Unit
ns
ns
r
P
uc
od
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t(
V
DD
=10V, I
D
= 60 A
Figure 14
V
GS
=5V
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Min.
od
r
Typ.
27
2050
545
70
17
7.7
3.5
1.1
s)
t(
uc
0.008
0.014
Ω
Ω
Max.
Unit
S
pF
pF
pF
22
nC
nC
nC
Ω
f=1MHz Gate DC Bias =0
Test Signal Level =20mV
Open Drain
Turn-on delay time
rise time
Turn-off delay time
fall time
18
25
ns
ns
4/13
STB75NH02L
Table 6.
Symbol
I
SD
I
SDM
V
SD(1)
t
rr
Q
rr
I
RRM
Electrical characteristics
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on Voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 30 A, V
GS
= 0
I
SD
=60 A, di/dt = 100A/µs,
V
DD
=15 V, T
J
=150°C
36
35
3.6
Test conditions
Min.
Typ.
Max.
60
240
1.3
Unit
A
A
V
ns
µC
A
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
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