STB80NE03L-06
N-channel 30V - 0.005Ω - 85A - D
2
PAK
STripFET™ Power MOSFET
General features
Type
STB80NE03L-06
■
■
■
V
DSS
30V
R
DS(on)
<0.006Ω
I
D
80A
3
1
Exceptional dv/dt capability
Low gate charge 100°C
100% Avalanche tested
D
2
PAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STB80NE03L-06
Marking
B80NE03L
Package
D²PAK
Packaging
Tape & reel
July 2006
Rev 6
1/13
www.st.com
13
Contents
STB80NE03L-06
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB80NE03L-06
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM (1)
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Derating factor
Value
30
30
± 20
80
60
320
1
150
7
-55 to 175
W
V/ns
°C
Unit
V
V
V
A
A
A
P
TOT
dv/dt
(2)
T
J
Tstg
Total dissipation at T
C
= 25°C
Peak diode recovery voltage slope
Operating junction temperature
Storage temperture
1. Pulse width limited by safe operating area
2. I
SD
< 20A, di/dt < 100A/µs, V
DD
= 80% V
(BR)DSS
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal resistance
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Table 3.
Symbol
I
AR
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25°C, Id=Iar, Vdd=50V)
Max Value
80
600
Unit
A
mJ
3/13
Electrical characteristics
STB80NE03L-06
2
Electrical characteristics
(T
CASE
= 25°C unless otherwise specified)
Table 4.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= Max rating,
V
DS
= Max rating @125°C
V
DS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10 V, I
D
= 40A
V
GS
= 4.5 V, I
D
= 40A
1
1.7
0.005
Min.
30
1
10
±100
2.5
0.006
0.008
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
Table 5.
Symbol
g
fs(1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 40A
V
DS
= 25V, f = 1 MHz,
V
GS
=0
Min.
30
Typ.
50
6500
1500
500
95
30
44
130
Max.
Unit
S
pF
pF
pF
nC
nC
nC
V
DD
= 24 V, I
D
= 80A,
V
GS
= 5V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6.
Symbol
t
d(on)
t
r
t
r(Voff)
t
f
t
c
Switching times
Parameter
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross over time
Test conditions
V
DD
= 15 V, I
D
= 40 A
R
G
= 4.7Ω V
GS
= 4.5 V
Figure 12.
V
DD
= 24 V, I
D
= 80 A,
R
G
= 4.7Ω, V
GS
= 5V
Figure 12.
Min.
Typ.
40
260
70
165
250
Max.
55
350
95
220
340
Unit
ns
ns
ns
ns
ns
4/13
STB80NE03L-06
Electrical characteristics
Table 7.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 80A, V
GS
= 0
I
SD
= 80 A,
di/dt = 100A/µs, V
DD
= 15
V, T
J
= 150°C
Figure 15.
75
0.14
4
Test conditions
Min
Typ.
Max
80
320
1.5
Unit
A
A
V
ns
nC
A
1. Pulse with limited by safe operating area
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
5/13
stm32/stm8
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