STBV32
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
n
n
n
n
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
Figure 1: Package
APPLICATIONS
n
COMPACT FLUORESCENT LAMPS (CFLS)
DESCRIPTION
The device is manufactured using High Voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds while
maintaining the wide RBSOA.
The STBV series is designed for use in Compact
Fluorescent Lamps.
TO-92
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
STBV32
STBV32-AP
Marking
BV32
BV32
Package
TO-92
TO-92
Packaging
Bulk
Ammopack
Table 2: Absolute Maximum Ratings
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
April 2005
Parameter
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0, I
B
= 0.5 A, t
p
< 10 ms)
Collector Current
(f
≥
100 Hz, duty-cycle
≤
50 %, T
C
= 25
o
C)
Collector Peak Current (t
p
< 5ms)
Base Current
Base Peak Current (t
p
< 5ms)
Total Dissipation at T
C
= 25
o
C
3
0.5
1.5
1.5
Rev. 2
A
A
A
W
1/9
Value
700
400
V
(BR)EBO
1.5
Unit
V
V
V
A
STBV32
Symbol
T
stg
T
J
Storage Temperature
Max. Operating Junction Temperature
Parameter
Value
-65 to 150
150
Unit
°C
°C
Table 3: Thermal Data
R
thj-case
R
thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-Ambient
Max
Max
83.3
112
o
C/W
o
C/W
Table 4: Electrical Characteristics (T
case
= 25
o
C unless otherwise specified)
Symbol
I
CEV
V
(BR)EBO
Parameter
Collector Cut-off Current V
CE
= 700 V
(V
BE
= -1.5 V)
V = 700 V
CE
Test Conditions
T
j
=125
o
C
Min.
Typ.
Max.
1
5
Unit
mA
mA
V
Emitter-Base
Breakdown Voltage
(I
C
= 0 )
I
E
= 10 mA
9
18
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0 )
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 10 mA
400
V
I
C
= 0.5 A
I
C
= 1 A
I
C
= 1.5 A
I
B
= 100 mA
I
B
= 250 mA
I
B
= 500 mA
I
B
= 100 mA
I
B
= 250 mA
V
CE
= 2 V
V
CE
= 2 V
V
CC
= 125 V
t
p
= 25 µs
8
5
0.5
1
1.5
1.0
1.2
35
25
1
4
0.7
V
V
V
V
V
V
BE(sat)
*
h
FE
Base-Emitter Saturation I
C
= 0.5 A
Voltage
I
C
= 1 A
DC Current Gain
RESISTIVE LOAD
I
C
= 0.5 A
I
C
= 1 A
I
C
= 1 A
I
B1
= -I
B2
= 200 mA
(see figure 12)
I
C
= 1 A
I
B1
= 200 mA
L = 50 mH
t
r
t
s
t
f
t
s
Rise Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
µs
µs
µs
µs
V
clamp
= 300 V
V
BE(off)
= -5V
R
BB
= 0
0.8
(see figure 13)
* Pulsed: Pulsed duration = 300 µs, duty cycle
≤
1.5
%.
2/9
STBV32
Figure 3: Safe Operating Area
Figure 6: Derating Curve
Figure 4: Output Characteristics
Figure 7: Collector-Emitter Saturation Voltage
Figure 5: Base-Emitter Saturation Voltage
Figure 8: DC Current Gain
3/9
STBV32
Figure 9: DC Current Gain
Figure 11: Inductive Load Switching Times
Figure 10: Reverse Biased Operating Area
4/9
STBV32
Figure 12: Resistive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
Table 13: Inductive Load Switching Test Circuit
1) Fast electronic switch
2) Non-inductive Resistor
3)
Fast recovery rectifier
5/9
Microchip MCU
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