VS-16RIA Series
www.vishay.com
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 16 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
TO-48 (TO-208AA)
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
16 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
1.75 V
60 mA
-65 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
16
85
35
340
360
574
524
100 to 1200
110
-65 to +125
UNITS
A
°C
A
A
A
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-16RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE I
DRM
/I
RRM
MAXIMUM
PEAK VOLTAGE
(2)
AT T
J
= T
J
MAXIMUM
mA
V
150
300
500
700
900
1100
1300
10
20
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
5 ms
p
Revision: 21-Sep-17
Document Number: 93695
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° sinusoidal conduction
VALUES
16
85
35
340
360
285
Sinusoidal half wave,
initial T
J
= T
J
maximum
300
574
524
405
375
5740
0.97
1.24
17.9
m
13.6
1.75
130
200
V
mA
A
2
s
A
2
s
A
UNITS
A
°C
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
),
T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 50 A, T
J
= 25 °C
T
J
= 25 °C, anode supply 6 V, resistive load
V
SWITCHING
PARAMETER
V
DRM
600 V
Maximum rate of rise
of turned-on current
V
DRM
800 V
V
DRM
1000 V
V
DRM
1600 V
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
t
gt
t
rr
t
q
T
J
= 25 °C,
at rated V
DRM
/V
RRM
, T
J
= 125 °C
T
J
= T
J
maximum,
I
TM
= I
T(AV)
, t
p
> 200 μs, dI/dt = - 10 A/μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
,
t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
SYMBOL
TEST CONDITIONS
VALUES
200
180
160
150
0.9
4
110
μs
A/μs
UNITS
Note
• t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
100
300
(1)
UNITS
V/μs
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 16RIA120S90
Revision: 21-Sep-17
Document Number: 93695
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= - 65 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 65 °C
DC gate voltage required to trigger
V
GT
I
GD
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
T
J
= T
J
maximum, V
DRM
= Rated value
T
J
= T
J
maximum,
V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
mA
V
mA
UNITS
W
A
V
DC gate voltage not to trigger
V
GD
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
TO NUT
20 (27.5)
Mounting torque
Lubricated threads
(Non-lubricated threads)
0.23 (0.32)
2.3 (3.1)
Approximate weight
Case style
See dimensions - link at the end of datasheet
14
0.49
TO-48 (TO-208AA)
TEST CONDITIONS
VALUES
-65 to +125
0.86
K/W
0.35
TO DEVICE
25
0.29
2.8
lbf
in
kgf · m
N·m
g
oz.
UNITS
°C
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.21
0.25
0.31
0.45
0.76
RECTANGULAR CONDUCTION
0.15
0.25
0.34
0.47
0.76
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93695
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
130
120
110
100
Conduction Period
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
16RIA Series
R
thJC
(DC) = 1.15 K/W
16RIA Series
R
thJC
(DC) = 1.15 K/W
Conduction Angle
90
30°
80
70
60
DC
50
0
10
20
30
40
Average On-state Current (A)
60°
90°
120°
180°
30°
80
70
60
50
0
5
60°
90°
120°
180°
10
15
20
25
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
=
A
hS
R
t
2
K/
W
1
0.
W
K/
3K
/W
4K
/W
5K
/W
7K
/W
a
elt
-D
R
16RIA Series
T
J
= 125°C
10 K/
W
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
45
40
35
30
25
RMS Limit
20
15
10
5
0
0
4
8
12
16
20
24
28
0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Period
DC
180°
120°
90°
60°
30°
=
A
hS
R
t
2
K/
W
1
0.
W
K/
3K
/W
4K
/W
5K
/W
7K
/W
a
elt
-D
R
16RIA Series
T
J
= 125°C
10 K/
W
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Sep-17
Document Number: 93695
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-16RIA Series
www.vishay.com
Vishay Semiconductors
350
Peak Half Sine Wave On-state Current (A)
325
300
275
250
225
200
175
150
16RIA Series
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
300
Peak Half Sine Wave On-state Current (A)
280
260
240
220
200
180
160
140
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
16RIA Series
10
100
125
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1000
16RIA Series
Instantaneous On-state Current (A)
100
10
T
J
= 25°C
T
J
= 125°C
1
0.5
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
10
Steady State Value
R
thJC
= 1.15 K/W
(DC Operation)
1
0.1
16RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 21-Sep-17
Document Number: 93695
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
