VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 22 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
TO-48 (TO-208AA)
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
22 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
1.70 V
60 mA
-65 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
22
85
35
400
420
793
724
100 to 1200
110
-65 to +125
UNITS
A
°C
A
A
A
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-22RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE I
DRM
/I
RRM
MAXIMUM
PEAK VOLTAGE
(2)
AT T
J
= T
J
MAXIMUM
mA
V
150
300
500
700
900
1100
1300
10
20
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
5 ms
p
Revision: 21-Sep-17
Document Number: 93700
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° sinusoidal conduction
VALUES
22
85
35
400
420
335
Sinusoidal half wave,
initial T
J
=T
J
maximum
355
793
724
560
515
7930
0.83
0.95
14.9
m
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 70 A, T
J
= 25 °C
T
J
= 25 °C, anode supply 6 V, resistive load
13.4
1.70
130
200
V
mA
A
2
s
V
A
2
s
A
UNITS
A
°C
A
t = 0.1 to 10 ms, no voltage reapplied,
T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
SWITCHING
PARAMETER
V
DRM
600 V
Maximum rate of rise
of turned-on current
V
DRM
800 V
V
DRM
1000 V
V
DRM
1600 V
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
t
gt
t
rr
t
q
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs,
dI/dt = - 10 A/μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
dI/dt
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
,
t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
SYMBOL
TEST CONDITIONS
VALUES
200
180
160
150
0.9
4
μs
110
A/μs
UNITS
Note
• t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
100
300
(1)
UNITS
V/μs
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 22RIA120S90
Revision: 21-Sep-17
Document Number: 93700
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
TEST CONDITIONS
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= - 65 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= - 65 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum, V
DRM
= Rated value
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
mA
V
mA
UNITS
W
A
V
DC gate voltage not to trigger
V
GD
T
J
= T
J
maximum,
V
DRM
= Rated value
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction
and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
TO NUT
20 (27.5)
Mounting torque
Lubricated threads
(Non-lubricated threads)
0.23 (0.32)
2.3 (3.1)
Approximate weight
Case style
See dimensions - link at the end of datasheet
14
0.49
TO-48 (TO-208AA)
TEST CONDITIONS
VALUES
-65 to +125
0.86
K/W
0.35
TO DEVICE
25
0.29
2.8
lbf
in
kgf · m
N·m
g
oz.
UNITS
°C
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.21
0.25
0.31
0.45
0.76
RECTANGULAR CONDUCTION
0.15
0.25
0.34
0.47
0.76
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93700
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
130
22RIA Series
R
thJC
(DC) = 0.86 K/W
Maximum Allowable Case Temperature (°C)
130
22RIA Series
R
thJC
(DC) = 0.86 K/W
120
120
110
Conduction Angle
110
Conduction Period
100
30°
60°
90°
120°
180°
100
30°
60°
90°
120°
180°
DC
90
90
80
0
5
10
15
20
25
Average On-state Current (A)
80
0
10
20
30
40
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
40
35
30
25
20
15
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
R
t
2
A
hS
K/
W
=
/W
1K
3K
/W
aR
elt
-D
4K
/W
5K
/W
7K
/W
10 K
/W
10
5
0
0
5
10
22RIA Series
T
J
= 125°C
15
20
25
0
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 2 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
50
45
40
35
30
DC
180°
120°
90°
60°
30°
R
t
A
hS
2
K/
W
=
1
W
K/
a
elt
-D
25 RMS Limit
20
15
10
5
0
0
5
10
15
20
25
30
0
35
Conduction Period
3K
/W
4K
/W
R
5K
/W
7K
/W
10 K/
W
22RIA Series
T
J
= 125°C
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Revision: 21-Sep-17
Document Number: 93700
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
400
Peak Half Sine Wave On-state Current (A)
375
350
325
300
275
250
225
200
175
22RIA Series
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
375
Peak Half Sine Wave On-state Current (A)
350
325
300
275
250
225
200
175
150
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
22RIA Series
10
100
150
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
Instantaneous On-state Current (A)
100
10
T
J
= 25°C
T
J
= 125°C
22RIA Series
1
0.5
1
1.5
2
2.5
3
Instantaneous On-state Voltage (V)
Fig. 6 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
1
Steady State Value
R
thJC
= 0.86 K/W
(DC Operation)
0.1
22RIA Series
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 7 - Thermal Impedance Z
thJC
Characteristics
Revision: 21-Sep-17
Document Number: 93700
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
