STD110NH02L
N-channel 24V - 0.0044Ω - 80A - DPAK
STripFET™ III Power MOSFET
General features
Type
STD110NH02L
1.
■
■
■
■
V
DSSS
24V
R
DS(on)
<0.0048Ω
I
D
80A
(1)
3
1
Value limited by wire bonding
R
DS(on)
* Qg industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
DPAK
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD110NH02LT4
Marking
D110NH02L
Package
DPAK
Packaging
Tape & reel
August 2006
Rev 7
1/15
www.st.com
15
Contents
STD110NH02L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STD110NH02L
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
Absolute maximum ratings
Parameter
Value
30
24
24
± 20
80
80
320
125
0.83
900
-55 to 175
Max. operating junction temperature
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
V
spike (1)
Drain-source voltage rating
V
DS
V
DGR
V
GS
I
D (2)
I
D (2)
I
DM (3)
P
TOT
E
AS (4)
T
stg
T
J
2.
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20KΩ)
Drain-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Single pulse avalanche energy
Storage temperature
1. Garanted when external Rg = 4.7
Ω
and t
f
< t
fmax
.
Value limited by wire bonding.
3. Pulse width limited by safe operating area
4. Starting T
J
= 25
o
C, I
D
= 30A, V
DD
= 15V
Table 2.
Symbol
R
thJC
R
thJA
T
l
Thermal data
Parameter
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Value
1.20
100
275
Unit
°C/W
°C/W
°C
3/15
Electrical characteristics
STD110NH02L
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1.
On
(1)
/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 25mA, V
GS
= 0
V
DS
= 20
V
DS
= 20, T
C
= 125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 40A
V
GS
= 5V, I
D
= 20A
1
0.0044 0.0050
0.0050 0.0095
Min.
24
1
10
±100
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
oss(2)
Q
gls(3)
R
G
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Third-quadrant gate charge
Gate input resistance
Test conditions
V
DS
= 10 V
,
I
D
= 40A
V
DS
= 15V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
52
4450
1126
141
69
13
9
27
64
16
93
Max.
Unit
S
pF
pF
pF
nC
nC
nC
nC
nC
Ω
V
DD
= 10V, I
D
= 80A
V
GS
= 10V
V
DS
= 16V, V
GS
= 0V
V
DS
< 0V, V
GS
= 10V
f = 1MHz gate DC Bias = 0
Test signal level = 20mV
Open drain
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. Q
oss =
C
oss
*∆ V
in ,
C
oss =
C
gd +
C
ds .
See
Section Appendix A
3. Gate charge for synchronous operation
4/15
STD110NH02L
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 10V, I
D
= 40A,
R
G
= 4.7Ω, V
GS
= 10V
Figure 13 on page 8
Min.
Typ.
14
224
69
40
Max.
Unit
ns
ns
ns
ns
54
Table 6.
Symbol
I
SD
I
SDM
V
SD(1)
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, V
GS
= 0
I
SD
= 80A,
di/dt = 100A/µs,
V
DD
= 15V, T
J
= 150°C
Figure 15 on page 8
47
58
2.5
Test conditions
Min
Typ.
Max
80
320
1.3
Unit
A
A
V
ns
µC
A
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/15
PCB设计
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
