STD17NF03L
STD17NF03L-1
N-channel 30V - 0.038Ω - 17A - DPAK/IPAK
STripFET™ II Power MOSFET
General features
Type
STD17NF03L-1
STD17NF03L
■
■
■
■
V
DSS
30V
30V
R
DS(on)
<0.05Ω
<0.05Ω
I
D
17A
17A
2
1
3
1
3
Exceptional dv/dt capability
Low gate charge at 100°C
Application oriented characterization
100% avalanche tested
iPAK
DPAK
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STD17NF03L-1
STD17NF03LT4
Marking
D17NF03L@
D17NF03L@
Package
IPAK
DPAK
Packaging
Tube
Tape & reel
February 2007
Rev 4
1/14
www.st.com
14
Contents
STD17NF03L - STD17NF03L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STD17NF03L - STD17NF03L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(1)
P
tot
dv/dt
(2)
E
AS (3)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Peak diode recovery avalanche energy
Single pulse avalanche energy
Storage temperature
-55 to 175
Max. operating junction temperature
°C
Value
30
30
± 16
17
12
68
30
0.2
7
200
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Pulse width limited by safe operating area.
2. I
SD
≤
17A, di/dt
≤
300A/µs, V
DD
=V
(BR)DSS
, T
j
≤
T
JMAX
3. Starting T
j
= 25 °C, I
D
= 8.5A, V
DD
= 15V
Table 2.
Rthj-case
Rthj-amb
T
J
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-to ambient max
Maximum lead temperature for soldering purpose
5.0
100
275
°C/W
°C/W
°C
3/14
Electrical characteristics
STD17NF03L - STD17NF03L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
=0
V
DS
= Max rating
V
DS
= Max rating,
T
C
= 125°C
V
GS
= ± 16V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 8.5A
V
GS
= 5V, I
D
= 8.5A
1
1.5
0.038
0.045
Min.
30
1
10
±100
2.2
0.05
0.06
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Ω
I
DSS
I
GSS
V
GS(th)
R
DS(on)
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Test conditions
V
DS
> I
D(on)
x
R
DS(on)max
,
,
I
D
=8.5A
V
DS
= 25V, f = 1MHz,
V
GS
= 0
Min.
Typ.
12
320
155
28
11
100
25
22
4.8
2.25
1.7
6.5
Max.
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
= 15V, I
D
= 8.5A
R
G
= 4.7Ω V
GS
= 5V
(see
Figure 13)
V
DD
= 3024V, I
D
= 17A,
V
GS
= 5V, R
G
= 4.7Ω
(see
Figure 14)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
4/14
STD17NF03L - STD17NF03L-1
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 17A, V
GS
= 0
28
18
1.3
Test conditions
Min.
Typ.
Max.
22
88
1.5
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 17A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 15V, T
j
= 150°C
Reverse recovery current (see
Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/14
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