STD38NH02L
STD38NH02L-1
N-channel 24V - 0.011Ω - 38A - DPAK/IPAK
STripFET™ III Power MOSFET
General features
Type
STD38NH02L-1
STD38NH02L
■
■
■
■
■
V
DSS
24V
24V
R
DS(on)
<0.0135Ω
<0.0135Ω
I
D
38A
38A
2
1
3
Logic level device
R
DS(ON)
* Q
g
Industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold drive
iPAK
Description
This device utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC
converter application where high efficiency is to
be achieved.
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Order
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Internal schematic diagram
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DPAK
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Switching application
Part number
Marking
Package
IPAK
Packaging
Tube
Tape & reel
STD38NH02L-1
D38NH02L
STD38NH02LT4
D38NH02L
DPAK
July 2006
Rev 8
1/16
www.st.com
16
Contents
STD38NH02L - STD38NH02L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
7
Test circuit
................................................ 8
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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2/16
STD38NH02L - STD38NH02L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
spike (1)
V
DS
V
DGR
V
GS
I
D
I
D
I
DM(2)
P
tot
E
AS (3)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage rating
Drain-source voltage (V
GS
= 0)
Drain-gate voltage (R
GS
= 20 kΩ)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating Factor
Single pulse avalanche energy
Storage temperature
Value
30
24
24
± 20
38
27
152
Unit
V
V
V
V
Max. operating junction temperature
1. Garanted when external R
g
=4.7
Ω
and t
f
< t
fmax
.
2. Pulse width limited by safe operating area.
3. Starting T
j
= 25 °C, I
D
= 19A, V
DD
= 18V
Table 2.
Rthj-case
Rthj-amb
T
J
Thermal data
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Thermal resistance junction-case max
Thermal resistance junction-ambient max
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P
40
0.27
250
d
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t(
A
A
A
W
W/°C
mJ
°C
so
b
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r
P
-55 to 175
od
s)
t(
uc
3.75
100
275
°C/W
°C/W
°C
Maximum lead temperature for soldering purpose
3/16
Electrical characteristics
STD38NH02L - STD38NH02L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 25mA, V
GS
=0
V
DS
= 20V
V
DS
= 20V, T
C
= 125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 19A
V
GS
= 5V, I
D
= 9.5A
1
Min.
24
1
10
Typ.
Max.
Unit
V
µA
µA
nA
V
1.8
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward
transconductance
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V
DS
= 10V
,
I
D
= 19A
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 25V, f = 1MHz,
V
GS
= 0
R
G
Gate Input Resistance
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 10V, I
D
= 19A
R
G
= 4.7Ω V
GS
= 10V
(see
Figure 13)
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
0.44V
≤
V
DD
≤
10V,
I
D
= 38A,
V
GS
= 10V, R
G
= 4.7Ω
(see
Figure 14)
Q
oss(2)
V
DS
= 16 V, V
GS
= 0 V
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
b
O
Test conditions
so
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Min.
ro
0.011
0.015
uc
d
±100
2.5
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t(
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e
od
r
Typ.
19
1070
305
45
ct
u
0.0135
0.025
s)
(
S
Ω
Ω
Max.
Unit
pF
pF
pF
f = 1 MHz Gate
DC Bias = 0 Test Signal
Level = 20 mV Open
Drain
1
Ω
7
62
25
12
18
4
2.5
6.5
24
ns
ns
ns
ns
nC
nC
nC
nC
2. Qoss = Coss*∆ Vin , Coss = Cgd + Cds . See
Chapter 4: Appendix A
4/16
STD38NH02L - STD38NH02L-1
Electrical characteristics
Table 5.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
I
SD
= 19A, V
GS
= 0
27
22
1.6
Test conditions
Min.
Typ.
Max.
38
152
1.3
Unit
A
A
V
ns
nC
A
V
SD (2)
t
rr
Q
rr
I
RRM
Reverse recovery time
I
SD
= 38A, di/dt = 100A/µs,
Reverse recovery charge V
DD
= 18V, T
j
= 150°C
Reverse recovery current (see
Figure 15)
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
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5/16
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