STD50N03L
STD50N03L-1
N-CHANNEL 30V - 9.2mΩ - 40A - DPAK/IPAK
STripFET™ III Power MOSFET
General features
Type
STD50N03L
STD50N03L-1
■
■
■
■
V
DSS
30V
30V
R
DS(on)
10.5mΩ
10.5mΩ
I
D
40A
40A
3
2
1
3
1
R
DS(on)
*Q
g
industry’s benchmark
Conduction losses reduced
Switching losses reduced
Low threshold device
IPAK
DPAK
Description
This product utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC
converter application where high efficiency is to
be achieved.
Internal schematic diagram
Applications
■
Switching applications
Order codes
Part number
STD50N03L
STD50N03L-1
Marking
D50N03L
D50N03L
Package
DPAK
IPAK
Packaging
Tape & reel
Tube
October 2006
Rev 2
1/16
www.st.com
16
Contents
STD50N03L - STD50N03L-1
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STD50N03L - STD50N03L-1
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D (1)
I
D
I
DM (2)
P
TOT
E
AS(3)
T
J
T
stg
Absolute maximum ratings
Parameter
Drain-source voltage (V
GS
= 0)
Gate-source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
=100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Single pulse avalanche energy
Operating junction temperature
Storage temperature
Value
30
±20
40
36
160
60
0.4
230
-55 to 175
Unit
V
V
A
A
A
W
W/°C
mJ
°C
1. Limited by wire bonding
2. Pulse width limited by safe operating area
3.
Starting
T
j
= 25°C,
I
D
=20A, V
DD
=15V
Table 2.
Symbol
R
thJ-Case
R
thJ-Amb
T
j
Thermal data
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Value
2.5
100
275
Unit
°C/W
°C/W
°C
3/16
Electrical characteristics
STD50N03L - STD50N03L-1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250µA, V
GS
= 0
V
DS
= 30V
V
DS
= 30V, Tc=125°C
V
GS
= ±20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
V
GS
= 5V, I
D
= 20A
1
9.2
0.012
10.5
0.019
Min.
30
1
10
±
100
Typ.
Max.
Unit
V
µA
µA
nA
V
mΩ
Ω
Table 4.
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Q
OSS (1)
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Output charge
Test conditions
V
DS
=25V, f=1MHz,
V
GS
=0
V
DD
= 15V, I
D
= 40A
V
GS
= 5V
(see Figure 13)
V
DS
= 24V ; V
GS
=0
f=1MHz Gate Bias
Bias=0 Test signal
Level=20mV
open drain
Min.
Typ.
1434
294
48
10.4
5.1
3.7
12.6
14
Max.
Unit
pF
pF
pF
nC
nC
nC
nC
R
G
Gate input resistance
1.1
Ω
1. Q
OSS
=C
OSS
*D V
in
; C
OSS
= C
gd
+ C
gd
. See
Appendix A
4/16
STD50N03L - STD50N03L-1
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Test conditions
V
DD
=15V, I
D
= 25A,
R
G
= 4.7Ω, V
GS
= 4.5V
(see Figure 12)
V
DD
= 15V, I
D
= 25A,
R
G
= 4.7Ω, V
GS
= 4.5V
(see Figure 12)
Min.
Typ.
15
125
Max.
Unit
ns
ns
Turn-off delay time
Fall time
14
45
ns
ns
Table 6.
Symbol
I
SD
I
SDM
(1)
Source drain diode
Parameter
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 20A, V
GS
=0
I
SD
= 40A, di/dt = 100A/µs,
V
DD
= 10 V, Tj = 25°C
(see Figure 17)
I
SD
= 40A, di/dt = 100A/µs,
V
DD
= 10V, Tj= 150°C
(see Figure 17)
26
15.6
1.2
26.4
18.1
1.4
Test conditions
Min.
Typ.
Max.
40
160
1.3
Unit
A
A
V
ns
nC
A
ns
nC
A
V
SD(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/16
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