STGB10NB37LZ
STGP10NB37LZ
10 A - 410 V internally clamped IGBT
Features
■
■
■
■
■
Low threshold voltage
Low on-voltage drop
Low gate charge
High current capability
High voltage clamping feature
1
2
TAB
TAB
3
3
1
Applications
■
TO-220
D²PAK
Automotive ignition
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior. The built in collector-gate Zener exhibits
a very precise active clamping while the gate-
emitter Zener supplies an ESD protection.
Figure 1.
Internal schematic diagram
C (2,TAB)
G (1)
E (3)
SC090150
Table 1.
Device summary
Marking
GB10NB37LZ
GB10NB37LZ
GP10NB37LZ
Package
D²PAK
D²PAK
TO-220
Packaging
Tube
Tape and reel
Tube
Order codes
STGB10NB37LZ
STGB10NB37LZT4
STGP10NB37LZ
November 2009
Doc ID 7402 Rev 4
1/15
www.st.com
15
Contents
STGB10NB37LZ, STGP10NB37LZ
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Doc ID 7402 Rev 4
STGB10NB37LZ, STGP10NB37LZ
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
V
CES
V
ECS
I
C(1)
I
C(1)
I
CP (2)
I
CL (3)
V
GE
P
TOT
ESD(HBM)
E
AS
T
stg
T
j
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Emitter collector voltage (V
GE
= 0)
Collector current (continuous) at T
C
= 25 °C
Collector current (continuous) at T
C
= 100 °C
Pulsed collector current
Turn-off latching current
Gate-emitter voltage
Total dissipation at T
C
= 25 °C
Electrostatic sensitive discharge, human
body model applied to all three pins
(C=100 pF, R=1.5 kΩ)
Single pulse energy at T
C
= 25 °C
Storage temperature
– 65 to 175
Operating junction temperature
°C
Value
V
CES
(clamped)
18
20
10
40
40
V
GE
(clamped)
125
4
300
Unit
V
V
A
A
A
A
V
W
kV
mJ
1. Calculated according to the iterative formula:
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= -------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2. Pulse width limited by maximum junction temperature and turn-off within RBSOA
3.
V
clamp
=
328
V, T
C
= 125 °C, R
G
=1 kΩ, V
GE
= 5 V
Table 3.
Symbol
R
thj-case
R
thj-amb
Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
1.2
62.5
Unit
°C/W
°C/W
Doc ID 7402 Rev 4
3/15
Electrical characteristics
STGB10NB37LZ, STGP10NB37LZ
2
Electrical characteristics
(T
J
= 25 °C unless otherwise specified)
Table 4.
Symbol
V
CES
(clamped)
V
(BR)ECS
V
GE
(clamped)
V
CE(sat)
V
GE(th)
I
CES
I
GES
R
GE
g
fs
Static
Parameter
Collector emitter clamped
voltage (V
GE
= 0)
Emitter collector break-
down voltage (V
GE
= 0)
Gate emitter clamped
voltage
Test conditions
I
C
= 2 mA,
T
J
= -40 °C to 150 °C
I
EC
= 75 mA
I
G
= ± 2 mA
Min.
380
18
12
1.2
1.3
0.6
16
1.8
Typ.
410
Max.
440
Unit
V
V
V
V
V
V
µA
µA
µA
kΩ
S
Collector-emitter saturation V
GE
= 4.5 V, I
C
= 10 A
voltage
V
GE
= 4.5 V, I
C
= 20 A
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Gate emitter resistance
Forward transconductance
V
CE
= 25 V
,
I
C
= 20 A
V
CE
= V
GE
, I
C
= 250 µA
T
J
= -40 °C to 150 °C
V
CE
= 15 V, T
J
= 150 °C
V
CE
= 200 V, T
J
=150 °C
V
GE
= ±10 V
2.2
10
100
±700
20
18
Table 5.
Symbol
C
ies
C
oes
C
res
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Test conditions
Min.
Typ. Max.
1300
105
12
Unit
pF
pF
pF
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
V
CE
=
328
V, I
C
= 10 A,
V
GE
= 5 V,
(see
Figure 18)
Q
g
28
nC
Table 6.
Symbol
U.I.S.
Functional characteristics
Parameter
Unclamped inductive
switching current
Test condition
R
GOFF
= 1 kΩ, L = 1 mH,
T
J
= 125 °C
Min.
13
Typ.
Max.
Unit
A
4/15
Doc ID 7402 Rev 4
STGB10NB37LZ, STGP10NB37LZ
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r
(di/dt)
on
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Cross-over time
Off voltage rise time
Delay time
Fall time
Cross-over time
Off voltage rise time
Delay time
Fall time
Test conditions
V
CC
=
328
V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 5 V
(see
Figure 19)
V
CC
=
328
V, I
C
= 10 A
R
G
= 1 KΩ, V
GE
= 5 V
(see
Figure 19)
V
CC
=
328
V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 5 V,
T
J
= 125 °C
(see
Figure 19)
Min.
Typ.
1300
270
60
3.6
2
8
1.4
5.7
2.7
9.2
2.8
Max.
Unit
ns
ns
A/µs
µs
µs
µs
µs
µs
µs
µs
µs
Table 8.
Symbol
E
on(1)
E
off(2)
E
ts
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
=
328
V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 5 V
(see
Figure 19)
V
CC
=
328
V, I
C
= 10 A
R
G
= 1 kΩ, V
GE
= 5 V,
T
J
= 125 °C (see
Figure 19)
Min.
Typ.
2.4
5
7.4
2.6
8.7
11.3
Max.
Unit
mJ
mJ
mJ
mJ
mJ
mJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25 °C and 125 °C)
2. Turn-off losses include also the tail of the collector current
Doc ID 7402 Rev 4
5/15
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