STGB10NC60K
10 A, 600 V short-circuit rugged IGBT
Features
■
■
Low on voltage drop (V
CESAT
)
Short-circuit withstand time 10 µs
TAB
Applications
■
■
■
High frequency motor controls
SMPS and PFC in both hard switch and
resonant topologies
Motor drives
Description
This device utilizes the advanced Power MESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
Figure 1.
so
b
te
le
ro
P
D²PAK
1
uc
d
3
s)
t(
Internal schematic diagram
Table 1.
Device summary
Part number
Marking
GB10NC60K
Package
D²PAK
Packaging
Tape and reel
STGB10NC60KT4
February 2011
Doc ID 11842 Rev 4
1/11
www.st.com
11
Electrical ratings
STGB10NC60K
1
Electrical ratings
Table 2.
Symbol
V
CES
I
C (1)
I
C (1)
I
CL (2)
I
CP (3)
V
GE
P
TOT
T
STG
T
J
t
SCW
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current at T
C
= 25°C
Continuous collector current at T
C
= 100°C
Turn-off latching current
Pulsed collector current
Gate-emitter voltage
Total dissipation at T
C
= 25°C
Storage temperature
Operating junction temperature
Short-circuit withstand time (V
CE
= 0.5 V
CES
,
T
J
= 125 °C, R
G
= 10
Ω,
V
GE
= 12 V)
Value
600
20
10
30
30
±20
Unit
V
A
A
A
1. Calculated according to the iterative formula:
T
j
(
max
)
–
T
C
I
C
(
T
C
)
= -------------------------------------------------------------------------------------------------------
R
thj
–
c
×
V
CE
(
sat
) (
max
)
(
T
j
(
max
)
,
I
C
(
T
C
) )
2. V
clamp
= 80 % V
CES
, V
GE
= 15 V, R
G
= 10
Ω,
T
J
= 150 °C
3.
Pulse width limited by maximum junction temperature and turn-off within RBSOA
Table 3.
Symbol
b
O
et
l
so
ro
P
e
R
thJC
R
thJA
Thermal data
Parameter
Value
1.9
62.5
Unit
°C/W
°C/W
uc
d
s)
t(
O
-
so
b
te
le
r
P
– 55 to 150
d
o
10
65
uc
s)
t(
A
V
W
°C
µs
Thermal resistance junction-case
Thermal resistance junction-ambient
2/11
Doc ID 11842 Rev 4
STGB10NC60K
Electrical characteristics
2
Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4.
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
(1)
Static
Parameter
Test conditions
Min.
600
2.2
1.8
4.5
2.5
6.5
Typ.
Max.
Unit
V
V
V
Collector-emitter breakdown
I
C
= 1mA
voltage (V
GE
= 0)
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
GE
= 15V, I
C
= 5A
V
GE
= 15V, I
C
= 5A, T
J
=125°C
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= 600 V
V
CE
= 600 V, T
J
= 125 °C
V
GE
= ± 20 V
V
CE
= 15 V
,
I
C
= 5A
1. Pulse test: pulse duration <
300
µs, duty cycle < 2 %.
Table 5.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
O
bs
et
l
o
Table 6.
ro
P
e
Total gate charge
Gate-emitter charge
Gate-collector charge
uc
d
s)
t(
O
-
so
b
te
le
r
P
du
o
15
Typ.
380
46
8.5
19
5
9
ct
150
1
s)
(
V
µA
mA
nA
S
±100
Test conditions
Min.
Max.
Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
=
390V,
I
C
= 5A,
V
GE
= 15V,
(see Figure 17)
Switching on/off (inductive load)
Parameter
Test conditions
V
CC
=
390V,
I
C
= 5A
R
G
= 10Ω, V
GE
= 15V,
(see Figure 18)
V
CC
=
390V,
I
C
= 5A
R
G
= 10Ω, V
GE
= 15V, Tj=125°C
(see Figure 18)
V
cc
=
390V,
I
C
= 5A,
R
GE
= 10Ω, V
GE
= 15V,
(see Figure 18)
V
cc
=
390V,
I
C
= 5A,
R
GE
=10Ω, V
GE
=15V, Tj=125°C
(see Figure 18)
Doc ID 11842 Rev 4
Min.
Typ.
17
6
655
16.5
6.5
575
33
72
82
60
106
136
Max. Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
3/11
Symbol
t
d(on)
Turn-on delay time
t
r
Current rise time
(di/dt)
on
Turn-on current slope
t
d(on)
Turn-on delay time
t
r
Current rise time
(di/dt)
on
Turn-on current slope
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Electrical characteristics
STGB10NC60K
Table 7.
Symbol
E
on(1)
E
off(2)
E
ts
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
=
390V,
I
C
= 5A
R
G
= 10Ω, V
GE
=15V,
(see Figure 18)
V
CC
=
390V,
I
C
= 5A
R
G
= 10Ω, V
GE
= 15V,
Tj= 125°C
(see Figure 18)
Min
Typ
55
85
140
87
162
249
Max
Unit
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a
package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same
temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
2.1
Figure 2.
Electrical characteristics (curves)
Output characteristics
Figure 3.
bs
O
Figure 4.
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
Transfer characteristics
ro
P
uc
d
s)
t(
Transconductance
Figure 5.
Collector-emitter on voltage vs
temperature
4/11
Doc ID 11842 Rev 4
STGB10NC60K
Figure 6.
Gate charge vs. gate-source
voltage
Figure 7.
Electrical characteristics
Capacitance variations
Figure 8.
Normalized gate threshold voltage
vs. temperature
Figure 9.
Collector-emitter on voltage vs
collector current
Figure 10. Normalized breakdown voltage vs
temperature
b
O
et
l
so
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Figure 11. Switching losses vs temperature
Doc ID 11842 Rev 4
5/11
Microchip MCU
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