STGB14NC60K
STGD14NC60K
N-channel 14A - 600V -DPAK - D
2
PAK
Short circuit rated PowerMESH™ IGBT
General features
Type
STGB14NC60K
STGD14NC60K
■
■
■
V
CES
600V
600V
V
CE(sat)
(Max)@ 25°C
<2.5V
<2.5V
I
C
@100°C
14A
14A
3
3
1
Low on-voltage drop (Vcesat)
Low C
res
/ C
ies
ratio ( no cross conduction
susceptibility)
Short circuit withstand time 10µs
1
D²PAK
DPAK
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Power
MESH™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high
frequency motor control applications with short
circuit withstand capability.
Internal schematic diagram
Applications
■
■
High frequency inverters
Motor drivers with short circuit protection
Order codes
Part number
STGB14NC60KT4
STGD14NC60KT4
Marking
GB14NC60K
GD14NC60K
Package
D²PAK
DPAK
Packaging
Tape & reel
Tape & reel
July 2006
Rev 1
1/16
www.st.com
16
Contents
STGB14NC60K - STGD14NC60K
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
........................... 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16
STGB14NC60K - STGD14NC60K
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
I
C(1)
I
C(1)
I
CL (2)
V
GE
P
TOT
t
scw
T
stg
T
j
1.
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GS
= 0)
Collector current (continuous) at T
C
= 25°C
Collector current (continuous) at T
C
= 100°C
Collector current (pulsed)
Gate-emitter voltage
Total dissipation at T
C
= 25°C
Short circuit withstand time, V
CE
= 0.5V
BR(CES)
,
Tj = 125°C, R
G
= 10Ω, V
GE
= 12V
Storage temperature
– 55 to 150
Operating junction temperature
°C
Value
600
25
14
50
±20
80
10
Unit
V
A
A
A
V
W
µs
Calculated according to the iterative formula:
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
2. V
clamp
= 480V, Tj =150°C, R
G
= 10Ω, V
GE
= 15V
Table 2.
Symbol
Thermal resistance
Parameter
Value
1.25
62.5
Unit
°C/W
°C/W
R
thj-case
Thermal resistance junction-case max
R
thj-amb
Thermal resistance junction-ambient max
3/16
Electrical characteristics
STGB14NC60K - STGD14NC60K
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
BR(CES)
I
GES
I
CES
V
GE(th)
V
CE(SAT)
g
fs (1)
Static
Parameter
Test condictions
Min.
600
±100
150
1
4.5
2.0
1.8
3
6.5
2.5
Typ.
Max. Unit
V
nA
µA
mA
V
V
V
S
Collector-emitter breakdown
I
C
= 1mA, V
GE
= 0
voltage
Gate-emitter leakage
current (V
CE
= 0)
Collector cut-off current
(V
GE
= 0)
Gate threshold voltage
Collector-emitter saturation
voltage
Forward transconductance
V
GE
= ±20V , V
CE
= 0
V
CE
= Max rating, T
C
= 25°C
V
CE
= Max rating, T
C
= 125°C
V
CE
= V
GE
, I
C
= 250µA
V
GE
= 15V, I
C
= 7A
V
GE
= 15V, I
C
= 7A, Tc= 125°C
V
CE
= 15V
,
I
C
= 7A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Table 4.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test condictions
Min.
Typ.
760
86
15.5
34.4
8.1
16.4
Max.
Unit
pF
pF
pF
nC
nC
nC
V
CE
= 25V, f = 1 MHz, V
GE
= 0
V
CE
= 390V, I
C
= 7A,
V
GE
= 15V
(see Figure 17)
4/16
STGB14NC60K - STGD14NC60K
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Test condictions
V
CC
= 390V, I
C
= 7A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 16)
V
CC
= 390V, I
C
= 7A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 125°C
(see Figure 16)
V
cc
= 390V, I
C
= 7A,
R
GE
= 10Ω , V
GE
= 15V
T
J
= 25°C
(see Figure 16)
V
cc
= 390V, I
C
= 7A,
R
GE
= 10Ω , V
GE
= 15V
Tj = 125°C
(see Figure 16)
Min.
Typ.
22.5
8.5
700
22
9.5
680
60
116
75
24
196
144
Max. Unit
ns
ns
A/µs
ns
ns
A/µs
ns
ns
ns
ns
ns
ns
Table 6.
Symbol
Eon
(1)
E
off (2)
E
ts
Eon
(1)
E
off (2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test condictions
V
CC
= 390V, I
C
= 7A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 16)
V
CC
= 390V, I
C
= 7A
R
G
= 10Ω V
GE
= 15V,
,
Tj= 125°C
(see Figure 16)
Min
Typ.
82
155
237
131
370
501
Max
Unit
µJ
µJ
µJ
µJ
µJ
µJ
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current.
5/16
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