STGB20NB37LZ
N-CHANNEL CLAMPED 20A - D²PAK
INTERNALLY CLAMPED PowerMESH™ IGBT
TYPE
STGB20NB37LZ
s
s
s
s
s
s
s
V
CES
CLAMPED
V
CE(sat)
< 2.0 V
I
C
20 A
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
ADD SUFFIX “T4” FOR ORDERING IN TAPE &
REEL
3
1
D²PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH
™
IGBTs, with outstanding performances.
The built in collector-gate zener exhibits a very pre-
cise active clamping while the gate-emitter zener
supplies an ESD protection.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
AUTOMOTIVE IGNITION
ORDERING INFORMATION
SALES TYPE
STGB20NB37LZT4
MARKING
GB20NB37LZ
PACKAGE
D
2
PAK
PACKAGING
TAPE & REEL
September 2003
1/8
STGB20NB37LZ
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
Eas
P
TOT
E
SD
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuos) at T
C
= 25°C
Collector Current (continuos) at T
C
= 100°C
Collector Current (pulsed)
Single Pulse Energy Tc = 25°C
Total Dissipation at T
C
= 25°C
Derating Factor
ESD (Human Body Model)
Storage Temperature
Max. Operating Junction Temperature
Value
CLAMPED
20
CLAMPED
40
20
80
700
200
1.33
8
–55 to 175
Unit
V
V
V
A
A
A
mJ
W
W/°C
KV
°C
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.75
62.5
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
BV
(CES)
Parameter
Clamped Voltage
Test Conditions
I
C
= 2 mA, V
GE
= 0, Tc= - 40°C
I
C
= 2 mA, V
GE
= 0, Tc= 25°C
I
C
= 2 mA, V
GE
= 0, Tc= 150°C
BV
(ECR)
BV
GE
I
CES
I
GES
R
GE
Emitter Collector Break-down
Voltage
Gate Emitter Break-down
Voltage
Collector cut-off Current
(V
GE
= 0)
Gate-Emitter Leakage
Current (V
CE
= 0)
Gate Emitter Resistance
I
C
= 75 mA, Tc = 25°C
I
G
= ± 2 mA
V
CE
= 15 V, V
GE
=0 ,T
C
=150 °C
V
CE
=200 V, V
GE
=0 ,T
C
=150°C
V
GE
= ± 10V , V
CE
= 0
± 300
10
± 660
15
20
12
375
Min.
Typ.
405
400
395
28
14
16
10
100
± 1000
30
425
Max.
Unit
V
V
V
V
V
µA
µA
µA
KΩ
ON (*)
Symbol
V
GE(th)
Parameter
Gate Threshold Voltage
Test Conditions
V
CE
= V
GE
, I
C
= 250µA, Tc=-40°C
V
CE
= V
GE
, I
C
= 250µA, Tc= 25°C
V
CE
=V
GE
, I
C
= 250µA, Tc=150°C
V
CE(SAT)
Collector-Emitter Saturation
Voltage
V
CE
=4.5V, I
C
= 10 A, Tc= 25°C
V
CE
=4.5V, I
C
= 10 A, Tc= 150°C
V
CE
=4.5V, I
C
= 20 A, Tc= 25°C
V
CE
=4.5V, I
C
= 20 A, Tc= 150°C
Min.
1.2
1
0.6
1.1
1.0
1.35
1.25
1.8
1.7
2.0
2.0
1.4
2
Typ.
Max.
Unit
V
V
V
V
V
V
V
2/8
STGB20NB37LZ
DYNAMIC
Symbol
g
fs
(1)
C
ies
C
oes
C
res
Q
g
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Charge
V
CE
= 280V, I
C
= 20 A,
V
GE
= 5V
Test Conditions
V
CE
= 25 V
,
I
C
=20 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
35
2300
165
28
51
Max.
Unit
S
pF
pF
pF
nC
FUNCTIONAL CHARACTERISTICS
Symbol
II
U.I.S.
Parameter
Latching Current
Functional Test Open
Secondary Coil
Test Conditions
V
Clamp
= 250 V, T
C
= 125 °C
R
GOFF
= 1KΩ , V
GE
= 4.5 V
R
GOFF
=1KΩ , L = 1.6 mH,
Tc=125°C
Min.
Typ.
40
20
Max.
Unit
A
A
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Eon
Parameter
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Test Conditions
V
CC
= 250 V, I
C
= 20 A
R
G
= 1KΩ , V
GE
= 4.5 V
V
CC
= 250 V, I
C
= 20 A
R
G
=1KΩ, V
GE
= 4.5 V
V
CC
= 250 V, I
C
= 20 A, Tc=25°C
R
G
=1KΩ, V
GE
= 4.5 V, Tc=150°C
Min.
Typ.
2.3
0.6
550
8.8
9.2
Max.
Unit
µs
µs
A/µs
mJ
mJ
SWITCHING OFF
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
Parameter
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
V
cc
= 250 V, I
C
= 20 A,
R
GE
= 1K
Ω
, V
GE
= 4.5 V
Tj = 125 °C
Test Conditions
V
cc
= 250 V, I
C
= 20 A,
R
GE
= 1K
Ω
, V
GE
= 4.5 V
Min.
Typ.
4.8
2.6
2.0
11.5
11.8
7.8
3.5
3.9
12.0
17.8
Max.
Unit
µs
µs
µs
µs
mJ
µs
µs
µs
µs
mJ
(1)
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(*)Pulse width limited by max. junction temperature.
(**)Losses Include Also the Tail
3/8
STGB20NB37LZ
Output Characteristics
Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Collector-Emitter On Voltage vs Temperature
Self Clamped Inductive Switching Energy vs
Open Secondary Coil
4/8
STGB20NB37LZ
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Normalized B
VGEO
(Zener Gate-Emitter) vs Tem-
perature
Normalized Clamping Voltage vs Gate Resis-
tance (Inductive Switch Configuration)
Normalized Clamping Voltage vs Temperature
Thermal Impedance
5/8
物联网大赛方案集锦
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
