STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Datasheet
N-channel 600 V, 7 A, very fast IGBT
TAB
Features
•
1
3
Low V
CE(sat)
Low C
RES
/C
IES
ratio (no cross-conduction susceptibility)
Very soft ultra fast recovery antiparallel diode
High-frequency operation
D
2
PAK
1
2
3
•
•
•
TAB
TO-220FP
1
TO-220
2
3
Applications
•
•
•
High-frequency inverters
SMPS and PFC in both hard switch and resonant topologies
Motor drivers
C(2, TAB)
G(1)
Description
E(3)
NG1E3C2T
Using the latest high-voltage technology based on a patented strip layout,
STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™
IGBTs characterized by an outstanding performance. The “H” suffix identifies a family
optimized for high-frequency applications which achieve very high switching
performances (reduced tfall) while mantaining a low voltage drop.
Product status link
STGB6NC60HDT4
STGF6NC60HD
STGP6NC60HD
DS4324
-
Rev 6
-
October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
CES
Parameter
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current at T
C
= 25 °C
I
C
Continuous collector current at
T
C
= 100 °C
Collector current (pulsed)
Gate-emitter voltage
Diode RMS forward current at T
C
= 25 °C
Total power dissipation at T
C
= 25 °C
Insulation withstand voltage (RMS) from
all three leads to external heat sink (t = 1
s; T
C
= 25 °C)
Storage temperature range
Operating junction temperature range
-55 to 150
62.5
15
7
Value
D
2
PAK, TO-220
600
6
3
21
±20
10
25
2.5
A
TO-220FP
Unit
V
I
CM
(1)
V
GE
I
F
P
TOT
V
ISO
T
STG
T
J
A
V
A
W
kV
°C
°C
1. Pulse width is limited by maximum junction temperature.
Table 2.
Thermal data
Symbol
R
thJC
R
thJA
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
D
2
PAK, TO-220
2
62.5
TO-220FP
5
Unit
°C/W
°C/W
DS4324
-
Rev 6
page 2/24
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics
2
Electrical characteristics
T
C
= 25 °C unless otherwise specified
Table 3.
Static characteristics
Symbol
V
(BR)CES
V
CE(sat)
V
GE(th)
I
CES
I
GES
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
Test conditions
V
GE
= 0 V, I
C
= 1 mA
V
GE
= 15 V, I
C
= 3 A
V
GE
= 15 V, I
C
= 3 A, T
C
= 125 °C
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 0 V, V
CE
= 600 V
V
GE
= 0 V, V
CE
= 600 V, T
C
= 125 °C
(1)
V
GE
= ±20 V, V
CE
= 0 V
3.75
Min.
600
1.9
1.7
5.75
10
1
±100
2.5
Typ.
Max.
Unit
V
V
V
µA
mA
nA
1. Defined by design, not subject to production test
Table 4.
Dynamic characteristics
Symbol Parameter
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-off SOA minimum
current
V
clamp
= 390 V, T
J
= 150 °C, R
G
= 10 Ω,
V
GE
= 15 V
V
CE
= 390 V, I
C
= 3 A, V
GE
= 0 to 15 V
(see
Figure 18. Gate charge test circuit)
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
Test conditions
Min.
-
-
-
-
-
-
-
Typ.
205
32
5.5
13.6
3
6
19
Max.
-
-
-
-
-
-
-
A
nC
pF
Unit
DS4324
-
Rev 6
page 3/24
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics
Table 5.
Switching characteristics (inductive load)
Symbol Parameter
t
d(on)
t
r
Turn-on delay time
Current rise time
Test conditions
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V (see
Figure 17. Test circuit for
inductive load switching)
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V, T
J
= 125 °C
(see
Figure 17. Test circuit for inductive
load switching)
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V (see
Figure 17. Test circuit for
inductive load switching)
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V, T
J
= 125 °C
(see
Figure 17. Test circuit for inductive
load switching)
Min.
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
12
5
612
13
4.3
560
40
76
100
60
98
124
Max.
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
Unit
ns
A/µs
ns
A/µs
(di/dt)
on
Turn-on current slope
t
d(on)
t
r
Turn-on delay time
Current rise time
(di/dt)
on
Turn-on current slope
t
r
(V
off
)
t
d
(off)
t
f
t
r
(V
off
)
t
d
(off)
t
f
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Table 6.
Switching energy (inductive load)
Symbol Parameter
E
on
(1)
E
off
(2)
E
ts
E
on
(1)
E
off
(2)
E
ts
Turn-on switching energy
Turn-off switching energy
Total switching energy
Turn-on switching energy
Turn-off switching energy
Total switching energy
Test conditions
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V (see )Figure
17. Test circuit
for inductive load switching
V
CC
= 390 V, I
C
= 3 A, R
G
= 10 Ω,
V
GE
= 15 V, T
J
= 125 °C
(see )Figure
17. Test circuit for inductive
load switching
Min.
-
-
-
-
-
-
Typ.
20
68
88
37
93
130
Max.
-
-
-
-
-
-
µJ
µJ
Unit
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
Table 7.
Collector-emitter diode
Symbol Parameter
V
f
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Test conditions
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 °C
I
f
= 3 A ,V
R
= 40 V, di/dt = 100 A/μs (see
Figure 20. Diode reverse recovery
waveform)
Min.
-
-
-
-
-
-
-
-
Typ.
1.6
1.3
21
14
1.36
34
32
1.88
Max.
2.1
Unit
V
ns
nC
A
ns
nC
A
I
f
= 3 A ,V
R
= 40 V, T
j
= 125 °C, di/dt =
100 A/μs (see
Figure 20. Diode reverse
recovery waveform)
DS4324
-
Rev 6
page 4/24
STGB6NC60HDT4, STGF6NC60HD, STGP6NC60HD
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
Transfer characteristics
Figure 3.
Transconductance
Figure 4.
Collector-emitter on-voltage vs temperature
VCE(sat)
(V)
4.5
3.6
2.7
1.8
0.9
0
-100
-50
0
50
100
150
Figure 5.
Gate charge vs gate-source voltage
Figure 6.
Capacitance variations
Cies
Coes
Cres
DS4324
-
Rev 6
page 5/24
Microchip MCU
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