STGD3NB60HD
N-CHANNEL 6A - 600V - DPAK
PowerMESH™ IGBT
TYPE
STGD3NB60HD
s
s
s
s
s
V
CES
600 V
V
CE(sat) (Max)
@25°C
< 2.8 V
I
C
@100°C
6A
3
1
s
HIGH INPUT IMPEDANCE
OFF LOSSES INCLUDE TAIL CURRENT
LOW GATE CHARGE
HIGH FREQUENCY OPERATION
TYPICAL SHORT CIRCUIT WITHSTAND TIME
5micro S-family, 4 micro H family
CO-PACKAGED WITH TURBOSWITCH™
ANTIPARALLEL DIODE
DPAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has de-
signed an advanced family of IGBTs, the Power-
MESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized for high
frequency applications (up to 50kHz)in order to
achieve very high switching performances (reduced
tfall) mantaining a low voltage drop.
APPLICATIONS
s
HIGH FREQUENCY MOTOR CONTROLS
s
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
INTERNAL SCHEMATIC DIAGRAM
ORDERING INFORMATION
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
SALES TYPE
MARKING
GD3NB60HD
PACKAGE
DPAK
PACKAGING
TAPE & REEL
STGD3NB60HDT4
September 2003
1/10
STGD3NB60HD
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
P
TOT
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Emitter-Collector Voltage
Gate-Emitter Voltage
Collector Current (continuous) at T
C
= 25°C
Collector Current (continuous) at T
C
= 100°C
Collector Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Storage Temperature
Operating Junction Temperature
Value
600
20
± 20
10
6
24
50
0.4
–55 to 150
Unit
V
V
V
A
A
A
W
W/°C
°C
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.5
100
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
V
BR(CES)
I
CES
I
GES
Parameter
Collector-Emitter Breakdown
Voltage
Collector cut-off
(V
GE
= 0)
I
C
= 250 µA, V
GE
= 0
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
O
so
b
Symbol
V
GE(th)
V
CE(sat)
te
le
r
P
uc
od
s)
t(
V
CE
= Max Rating, T
C
= 25 °C
so
b
-O
Test Conditions
te
le
r
P
od
Typ.
s)
t(
uc
°C/W
°C/W
Min.
600
Max.
Unit
V
50
100
±100
µA
µA
nA
V
CE
= Max Rating, T
C
= 125 °C
V
GE
= ±20V , V
CE
= 0
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250µA
V
GE
= 15V, I
C
= 3 A
V
GE
= 15V, I
C
= 3 A, Tj =125°C
Min.
3
Typ.
Max.
5
Unit
V
V
V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
2.4
1.9
2.8
2/10
STGD3NB60HD
ELECTRICAL CHARACTERISTICS
(CONTINUED)
DYNAMIC
Symbol
g
fs
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Parameter
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
V
CE
= 25 V
,
I
C
=3 A
V
CE
= 25V, f = 1 MHz, V
GE
= 0
Min.
Typ.
2.4
235
33
6.6
21
6
7.6
12
27
Max.
Unit
S
pF
pF
pF
nC
nC
nC
A
V
CE
= 480V, I
C
= 3 A,
V
GE
= 15V
V
clamp
= 480 V
,
Tj = 125°C
R
G
= 10
Ω
Test Conditions
V
CC
= 480 V, I
C
= 3 A
R
G
= 10Ω , V
GE
= 15 V
V
CC
= 480 V, I
C
= 3 A R
G
=10Ω
V
GE
= 15 V,Tj = 125°C
SWITCHING ON
Symbol
t
d(on)
t
r
(di/dt)
on
Eon
Parameter
Turn-on Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching Losses
Min.
Typ.
5
11
400
77
Max.
Unit
ns
ns
SWITCHING OFF
Symbol
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
t
c
t
r
(V
off
)
t
d
(
off
)
t
f
E
off
(**)
E
ts
Parameter
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Turn-off Switching Loss
Total Switching Loss
Cross-over Time
Off Voltage Rise Time
Delay Time
Fall Time
Test Conditions
V
cc
= 480 V, I
C
=3 A,
R
GE
= 10
Ω
, V
GE
= 15 V
Turn-off Switching Loss
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by max. junction temperature.
(**)Losses include Also the Tail (Jedec Standardization)
O
COLLECTOR-EMITTER DIODE
Symbol
I
f
I
fm
V
f
t
rr
Q
rr
I
rrm
Parameter
Forward Current
Forward Current pulsed
Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
f
= 1.5 A
I
f
= 1.5 A, Tj = 125 °C
I
f
= 1.5 A ,V
R
= 400 V,
Tj =125°C, di/dt = 100 A/µs
1.6
1.3
95
110
2.7
Test Conditions
Min.
Typ.
Max.
1.5
12
2.1
Unit
A
A
V
V
ns
nC
A
so
b
te
le
Total Switching Loss
r
P
uc
od
s)
t(
V
cc
= 480 V, I
C
= 3 A,
R
GE
= 10
Ω
, V
GE
= 15 V
Tj = 125 °C
so
b
-O
et
l
P
e
Min.
od
r
Typ.
76
36
53
77
33
100
180
82
58
110
88
165
s)
t(
uc
Max.
A/µs
µJ
Unit
ns
ns
ns
ns
µ
J
µ
J
ns
ns
ns
ns
µ
J
µ
J
3/10
STGD3NB60HD
Thermal Impedance
Output Characteristics
Transfer Characteristics
Transconductance
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Collector-Emitter On Voltage vs Temperature
4/10
STGD3NB60HD
Collector-Emitter On Voltage vs Collettor Current
Gate Threshold vs Temperature
Normalized Breakdown Voltage vs Temperature
Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
Total Switching Losses vs Gate Resistance
5/10
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