STGD6NC60HD
N-channel 600V - 7A - DPAK
Very fast PowerMESH™ IGBT
General features
Type
STGD6NC60HD
■
■
■
■
V
CES
600V
V
CE(sat)
Max
@25°C
<2.5V
I
C
@100°C
7A
3
1
Low on voltage drop (V
cesat
)
Low C
RES
/ C
IES
ratio (no cross-conduction
susceptibility)
Very soft ultra fast recovery antiparallel diode
High frequency operation
DPAK
Description
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH™ IGBTs, with outstanding
performances. The suffix “H” identifies a family
optimized for high frequency application in order
to achieve very high switching performances
(reduced tfall) maintaining a low voltage drop.
Internal schematic diagram
Applications
■
■
■
High frequency inverters
SMPS and PFC in both hard switch and
resonant topologies
Motor drivers
Order codes
Part number
STGD6NC60HDT4
Marking
GD6NC60HD
Package
DPAK
Packaging
Tape & reel
February 2007
Rev 3
1/15
www.st.com
15
Contents
STGD6NC60HD
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 7
3
4
5
6
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
STGD6NC60HD
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CES
I
C(1)
I
C(1)
I
CM(2)
V
GE
I
F
P
TOT
T
stg
T
j
T
l
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
GS
= 0)
Collector current (continuous) at T
C
= 25°C
Collector current (continuous) at T
C
= 100°C
Collector current (pulsed)
Gate-emitter voltage
Diode RMS forward current at Tc=25°C
Total dissipation at T
C
= 25°C
Storage temperature
– 55 to 150
Operating junction temperature
Maximum lead temperature for soldering purpose
(for 10sec. 1.6 mm from case)
T
–
T
JMAX
C
I
(
T
)
= -----------------------------------------------------------------------------------------------------
-
C C
R
×
V
(
T
,
I
)
THJ
–
C
CESAT
(
MAX
)
C C
Value
600
15
7
21
±20
10
56
Unit
V
A
A
A
V
A
W
°C
°C
300
1. Calculated according to the iterative formula:
2.
Pulse width limited by max junction temperature
Table 2.
Symbol
Rthj-case
Rthj-amb
Thermal resistance
Parameter
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Value
2
62.5
Unit
°C/W
°C/W
3/15
Electrical characteristics
STGD6NC60HD
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
BR(CES)
V
CE(sat)
V
GE(th)
I
CES
I
GES
g
fs
Static
Parameter
Collector-emitter
breakdown voltage
Test conditions
I
C
= 1mA, V
GE
= 0
Min.
600
1.9
1.7
3.75
2.5
Typ.
Max.
Unit
V
V
V
V
µA
mA
nA
S
Collector-emitter saturation V
GE
= 15V, I
C
= 3A
voltage
V
GE
= 15V, I
C
= 3A, Tc= 125°C
Gate threshold voltage
Collector cut-off current
(V
GE
= 0)
Gate-emitter leakage
current (V
CE
= 0)
Forward transconductance
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= Max rating,T
C
= 25°C
V
CE
=Max rating,T
C
= 125°C
V
GE
= ±20V, V
CE
= 0
V
CE
= 15V
,
I
C
= 3A
5.75
10
1
±100
3
Table 4.
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
I
CL
Dynamic
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Turn-off SOA minimum
current
Test conditions
V
CE
= 25V, f = 1MHz,
V
GE
= 0
V
CE
= 390V, I
C
= 3A,
V
GE
= 15V,
(see Figure 17)
V
clamp
=390V, Tj=150°C,
,
R
G
=10Ω V
GE
=15V
Min.
Typ. Max.
205
32
5.5
13.6
3.4
5.1
19
Unit
pF
pF
pF
nC
nC
nC
A
4/15
STGD6NC60HD
Electrical characteristics
Table 5.
Symbol
t
d(on)
t
r
(di/dt)
on
t
d(on)
t
r
(di/dt)
on
t
r
(V
off
)
t
d
(
off
)
t
f
t
r
(V
off
)
t
d
(
off
)
t
f
Switching on/off (inductive load)
Parameter
Turn-on delay time
Current rise time
Turn-on current slope
Test conditions
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A
R
G
= 10Ω V
GE
= 15V,
,
Tj=125°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A,
R
GE
= 10Ω V
GE
=
,
15V,T
J
=25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A,
,
R
GE
=10Ω V
GE
=15V,
Tj=125°C
(see Figure 18)
Min.
Typ.
12
5
612
Max.
Unit
ns
ns
A/µs
Turn-on delay time
Current rise time
Turn-on current slope
13
4.3
560
ns
ns
A/µs
Off voltage rise time
Turn-off delay time
Current fall time
40
76
100
ns
ns
ns
Off voltage rise time
Turn-off delay time
Current fall time
60
98
124
ns
ns
ns
Table 6.
Symbol
E
on(1)
E
off(2)
E
ts
E
on(1)
E
off(2)
E
ts
Switching energy (inductive load)
Parameter
Turn-on switching losses
Turn-off switching losses
Total switching losses
Test conditions
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
=15V,
Tj=25°C
(see Figure 18)
V
CC
= 390V, I
C
= 3A
,
R
G
= 10Ω V
GE
= 15V,
Tj= 125°C
(see Figure 18)
Min.
Typ.
20
68
88
Max.
Unit
µJ
µJ
µJ
Turn-on switching losses
Turn-off switching losses
Total switching losses
37
93
130
µJ
µJ
µJ
1. Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in
a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
2. Turn-off losses include also the tail of the collector current
5/15
51单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
