STI50DE100
Hybrid Emitter Switched Bipolar Transistor
ESBT 1000 V - 50 A - 0.026
Ω
General features
V
CS(ON)
1.3 V
■
I
C
50 A
R
CS(ON)
High voltage / high current Cascode
configuration
Ultra low equivalent on resistance
Very fast-switch up to 150 kHz
Ultra low C
iss
Low dynamic V
CS(ON)
■
■
■
■
Applications
■
■
Industrial converters
Welding
Description
The STI50DE100 is manufactured in a hybrid
structure, using dedicated high voltage Bipolar
and low voltage MOSFET technologies, aimed to
providing the best performance in ESBT topology.
The STI50DE100 is designed for use in industrial
converters and/or welding equipment.
Order codes
Part Number
STI50DE100
Marking
STI50DE100
Package
I4PAC-4L
Packing
Tube
January 2007
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
0.026
Internal schematic diagrams
Rev 1
®
Preliminary Data
4
1
2
3
I4PAC-4L
1/11
www.st.com
11
STI50DE100
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves)
........................... 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
STI50DE100
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
GS
I
C
I
CM
I
B
I
BM
P
tot
V
INS
T
stg
T
J
Absolute maximum rating
Parameter
Collector-source voltage (V
BS
= V
GS
= 0 V)
Base-source voltage (I
C
= 0, V
GS
= 0 V)
Source-base voltage (I
C
= 0, V
GS
= 0 V)
Gate-source voltage
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Insulation withstand voltage (RMS) from all three leads to
external heatsink
Storage temperature
Max. operating junction temperature
Value
1000
40
12
Unit
V
V
V
V
A
A
A
A
W
V
°C
°C
±
20
50
150
10
50
83
2500
-40 to 150
150
Table 2.
Symbol
R
thj-case
Thermal data
Parameter
Thermal resistance junction-case
__max
Value
1.5
Unit
°C/W
3/11
Electrical characteristics
STI50DE100
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CS(SS)
I
BS(OS)
I
SB(OS)
IGS(OS)
Electrical characteristics
Parameter
Collector-source current
(V
BS
= V
GS
= 0)
Base-source current
(I
C
= 0, V
GS
= 0)
Source-base current
(I
C
= 0, V
GS
= 0)
Gate-source leakage
Collector-source ON
voltage
DC current gain
Test Conditions
V
CE
= 1000V
V
BS(OS)
= 40V
V
SB(OS)
= 10V
V
GS
=
±
20V
V
GS
= 10V I
C
= 50A I
B
= 10A
V
GS
= 10V_I
C
= 30A I
B
= 3A
V
GS
= 10V_I
C
= 50A V
CS
= 1V
V
GS
= 10V_I
C
= 30A V
CS
= 1V
V
GS
= 10V_ I
C
= 50A I
B
= 10A
V
GS
= 10V_ I
C
= 30A_ I
B
= 3A
V
BS
= V
GS
______I
B
= 250
µ
A
V
CS
= 25V
______f
= 1MHz
V
GS
= V
CB
= 0
V
CS
= 25V
_____V
GS
= 10V
V
CB
= 0
I
C
= 50A
I
C
= 25A I
B
= 5A V
GS
= 10V
V
Clamp
= 800V
R
G
= 47Ω
t
p
= 4
µs
3
3
6
2.2
1.4
3.7
2500
4.5
1.3
1.1
7
13
V
V
V
pF
Min.
Typ. Max. Unit
100
10
100
500
µA
µA
µA
nA
V
V
V
CS(ON)
h
FE
V
BS(ON)
V
GS(th)
C
ISS
Q
GS(tot)
t
s
t
f
Base Source ON voltage
Gate threshold voltage
Input capacitance
Gate-source charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
Maximum collector-
source voltage switched
without snubber
Collector-source
dynamic voltage
(500ns)
Collector-source
dynamic voltage
60
nC
650
10
ns
ns
(see figure 13)
t
s
t
f
I
C
= 25A I
B
= 2.5A V
GS
= 10V
V
Clamp
= 800V
R
G
= 47Ω
t
p
= 4
µs
430
6
ns
ns
(see figure 13)
1000
V
CSW
R
G
= 47Ω h
FE
= 5A I
C
= 35A
V
CC
= V
Clamp
= 300V V
GS
= 10V
R
G
=
47Ω I
C
= 5A I
B
= 5A
I
Bpeak
= I
C
= 25A
t
peak
= 500
ns
V
CC
= V
Clamp
= 300V V
GS
= 10V
R
G
=
47Ω I
C
= 5A I
B
= 5A
I
Bpeak
= I
C
= 25A
t
peak
= 500
ns
V
V
CS(dyn)
5.5
V
V
CS(dyn)
4.8
V
(1 µs)
4/11
STI50DE100
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
DC current gain
Figure 3.
Collector-source On voltage
Figure 4.
Collector-source On voltage
Figure 5.
Base-source On voltage
Figure 6.
Base-source On voltage
5/11
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