5
th
Generation thinQ!™ SiC Schottky Diode
1
Description
IDW16G65C5
ThinQ!™ Generation 5 represents Infineon leading edge technology for the
SiC Schottky Barrier diodes. Thanks to the more compact design and thin-
wafer technology, the new family of products shows improved efficiency over
all load conditions, resulting from both the improved thermal characteristics
and a lower figure of merit (Qc x Vf).
The new thinQ!™ Generation 5 has been designed to complement our 650V
CoolMOS™ families: this ensures meeting the most stringent application
requirements in this voltage range.
1
2
3
Features
Revolutionary semiconductor material - Silicon Carbide
Benchmark switching behavior
No reverse recovery/ No forward recovery
Temperature independent switching behavior
High surge current capability
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC
1)
for target applications
Breakdown voltage tested at 35 mA
2)
Optimized for high temperature operation
System efficiency improvement over Si diodes
System cost / size savings due to reduced cooling requirements
Enabling higher frequency / increased power density solutions
Higher system reliability due to lower operating temperatures
Reduced EMI
Switch mode power supply
Power factor correction
Solar inverter
Uninterruptible power supply
1
2
3
CASE
Benefits
Applications
Table 1
Key Performance Parameters
Parameter
Value
Unit
650
V
V
DC
Q
C
;
V
R
=400V
23
nC
E
C
;
V
R
=400V
5.3
µJ
I
F
@ T
C
< 120°C
16
A
Table 2
Pin 1
n.c.
Pin Definition
Pin 2
Pin 3
C
A
Package
PG-TO247-3
Marking
D1665C5
Related links
www.infineon.com/sic
Type / ordering Code
IDW16G65C5
1) J-STD20 and JESD22
2) All devices tested under avalanche conditions for a time periode of 10ms
Final Data Sheet
2
Rev. 2.2, 2013-01-15
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW16G65C5
Table of contents
Table of Contents
1
2
3
4
5
6
7
8
Description.......................................................................................................................................... 2
Maximum ratings ................................................................................................................................ 4
Thermal characteristics ..................................................................................................................... 4
Electrical characteristics ................................................................................................................... 5
Electrical characteristics diagrams .................................................................................................. 6
Simplified Forward Characteristics Model ...................................................................................... 8
Package outlines ................................................................................................................................ 9
Revision History ............................................................................................................................... 10
Final Data Sheet
3
Rev. 2.2, 2013-01-15
5
th
Generation thinQ!
TM
SiC Schottky Diode
IDW16G65C5
Maximum ratings
2
Table 3
Parameter
Maximum ratings
Maximum ratings
Symbol
Min.
–
–
–
–
–
–
–
–
–
-55
–
Values
Typ.
–
–
–
–
–
–
–
–
–
–
50
Unit
Max.
16
95
74
637
45
28
650
100
94
175
70
Note/Test Condition
T
C
< 120°C, D=1
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
T
C
= 25°C,
t
p
=10 µs
T
C
= 25°C,
t
p
=10 ms
T
C
= 150°C,
t
p
=10 ms
V
R
=0..480 V
T
C
= 25°C
M3 and M4 screws
Continuous forward current
I
F
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Non-repetitive peak forward current
i²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
I
F,max
∫
i²dt
V
RRM
dv/dt
P
tot
T
j
;T
stg
A
A²s
V
V/ns
W
°C
Ncm
3
Table 4
Parameter
Thermal characteristics
Values
Typ.
1.2
–
–
Unit
Max.
1.6
62
260
K/W
°C
leaded
1.6mm (0.063 in.) from
case for 10 s
Note/Test Condition
Thermal characteristics TO-247-3
Symbol
Min.
Thermal resistance, junction-case
R
thJC
–
Thermal resistance, junction-
R
thJA
–
ambient
Soldering temperature,
T
sold
wavesoldering only allowed at leads
–
Final Data Sheet
4
Rev. 2.2, 2013-01-15
微控制器 MCU
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