PMEG40T30ER
6 March 2018
40 V, 3 A low Trench MEGA Schottky barrier rectifier
Product data sheet
1. General description
Trench Maximum Efficiency General Application (MEGA) Schottky barrier rectifier encapsulated in
a CFP3 (SOD123W) small and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
•
•
Average forward current: I
F(AV)
≤ 3 A
Reverse voltage: V
R
≤ 40 V
Low forward voltage
Low leakage current due to Trench MEGA Schottky technology
High power capability due to clip-bonding technology
Small and flat lead SMD plastic package
Capable for reflow and wave soldering
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Freewheeling application
Reverse polarity protection
Low power consumption application
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F(AV)
V
R
V
F
I
R
Parameter
average forward
current
reverse voltage
forward voltage
reverse current
Conditions
δ = 0.5 ; f = 20 kHz; T
sp
≤ 150 °C;
square wave
T
j
= 25 °C
I
F
= 3 A; T
j
= 25 °C; pulsed
V
R
= 10 V; T
j
= 25 °C; pulsed
V
R
= 40 V; T
j
= 25 °C; pulsed
[1]
Very short pulse, in order to maintain a stable junction temperature.
Min
-
-
[1]
[1]
[1]
-
-
-
Typ
-
-
460
5
8
Max
3
40
525
16
28
Unit
A
V
mV
µA
µA
Nexperia
PMEG40T30ER
40 V, 3 A low Trench MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
1
2
Symbol Description
K
A
cathode
anode
Simplified outline
1
2
Graphic symbol
K
sym001
A
CFP3 (SOD123W)
6. Ordering information
Table 3. Ordering information
Type number
PMEG40T30ER
Package
Name
CFP3
Description
Version
plastic, surface mounted package; 2 terminals; 2.6 mm x 1.7 mm SOD123W
x 1 mm body
7. Marking
Table 4. Marking codes
Type number
PMEG40T30ER
Marking code
L5
PMEG40T30ER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
2 / 14
Nexperia
PMEG40T30ER
40 V, 3 A low Trench MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
Parameter
reverse voltage
forward current
average forward current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Conditions
T
j
= 25 °C
δ = 1 ; T
sp
≤ 145 °C
δ = 0.5 ; f = 20 kHz; T
sp
≤ 150 °C; square
wave
t
p
= 8 ms; square wave; T
j(init)
= 25 °C
T
amb
≤ 25 °C
[1]
[2]
Min
-
-
-
-
-
-
-
-55
-65
Max
40
4.2
3
40
0.68
1.15
175
175
175
Unit
V
A
A
A
W
W
°C
°C
°C
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1] [2]
[1] [3]
[4]
Min
-
-
-
Typ
-
-
-
Max
220
130
18
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
PMEG40T30ER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
3 / 14
Nexperia
PMEG40T30ER
40 V, 3 A low Trench MEGA Schottky barrier rectifier
10
3
Z
th(j-a)
(K/W)
10
2
aaa-027272
duty cycle = 1
0.75
0.33
0.20
0.05
0.01
0.50
0.25
0.10
10
0.02
0
1
10
-3
10
-2
10
-1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig. 1.
10
3
Z
th(j-a)
(K/W)
duty cycle = 1
10
2
0.75
0.33
0.20
10
0.05
0.01
0
0.50
0.25
0.10
0.02
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-027273
1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p
(s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG40T30ER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
4 / 14
Nexperia
PMEG40T30ER
40 V, 3 A low Trench MEGA Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
V
(BR)R
V
F
Parameter
reverse breakdown
voltage
forward voltage
Conditions
I
R
= 1 mA; pulsed; T
j
= 25 °C
I
F
= 0.1 A; T
j
= 25 °C; pulsed
I
F
= 1 A; T
j
= 25 °C; pulsed
I
F
= 2 A; T
j
= 25 °C; pulsed
I
F
= 3 A; T
j
= 25 °C; pulsed
I
F
= 3 A; T
j
= -40 °C; pulsed
I
F
= 3 A; T
j
= 125 °C; pulsed
I
R
reverse current
V
R
= 10 V; T
j
= 25 °C; pulsed
V
R
= 30 V; T
j
= 25 °C; pulsed
V
R
= 40 V; T
j
= 25 °C; pulsed
V
R
= 40 V; T
j
= 125 °C; pulsed
C
d
t
rr
diode capacitance
reverse recovery time
step recovery
reverse recovery time
ramp recovery
V
FRM
[1]
Min
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
300
380
425
460
515
380
5
7
8
5.5
560
240
18
12
390
Max
-
345
440
490
525
-
-
16
-
28
-
-
-
-
-
-
Unit
V
mV
mV
mV
mV
mV
mV
µA
µA
µA
mA
pF
pF
ns
ns
mV
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C
V
R
= 10 V; f = 1 MHz; T
j
= 25 °C
I
F
= 0.5 A; I
R
= 0.5 A; I
R(meas)
= 0.1 A;
T
j
= 25 °C
dI
F
/dt = 200 A/µs; I
F
= 6 A; V
R
= 26 V;
T
j
= 25 °C
I
F
= 0.5 A; dI
F
/dt = 20 A/µs; T
j
= 25 °C
peak forward recovery
voltage
Very short pulse, in order to maintain a stable junction temperature.
PMEG40T30ER
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2018. All rights reserved
Product data sheet
6 March 2018
5 / 14
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