Important notice
Dear Customer,
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DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
PLVA6xxA series
Low-voltage avalanche regulator
diodes
Product data sheet
Supersedes data of 1999 May 25
2004 Jan 14
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator diodes
FEATURES
•
Very low dynamic impedance at low currents:
approximately
1
⁄
20
of conventional series
•
Hard breakdown knee
•
Low noise: approximately
1
⁄
10
of conventional series
•
Total power dissipation: max. 250 mW
•
Small tolerances of V
Z
•
Working voltage range: nominal 5.00 to 6.80 V
•
Non-repetitive peak reverse power dissipation:
maximal 30 W.
APPLICATIONS
•
Low current, low power, low noise applications
•
CMOS RAM back-up circuits
•
Voltage stabilizers
•
Voltage limiters
•
Smoke detector relays.
DESCRIPTION
High performance voltage regulator diodes in small
SOT23 plastic SMD packages.
The series consists of PLVA650A to PLVA668A.
MARKING
TYPE NUMBER
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
MARKING CODE
(1)
*9A
*9B
*9C
*9D
*9E
*9F
*9G
Top view
handbook, halfpage
2
PLVA6xxA series
PINNING
PIN
1
2
3
anode
not connected
cathode
DESCRIPTION
1
2
n.c.
3
3
1
MAM243
Fig.1 Simplified outline (SOT23) and symbol.
2004 Jan 14
2
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator diodes
ORDERING INFORMATION
TYPE
NUMBER
PLVA6xxA
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
PLVA6xxA series
VERSION
SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZRM
P
ZSM
P
tot
T
stg
T
j
Note
1. Device mounted on an FR4 printed circuit-board.
PARAMETER
continuous forward current
repetitive peak working current
total power dissipation
storage temperature
junction temperature
t
p
= 100
μs; δ
= 10%
T
amb
= 25
°C;
note 1
CONDITIONS
−
−
−
−65
−
MIN.
MAX.
250
250
30
250
+150
150
UNIT
mA
mA
W
mW
°C
°C
non-repetitive peak reverse power dissipation t
p
= 100
μs;
T
j
= 150
°C −
2004 Jan 14
3
NXP Semiconductors
Product data sheet
Low-voltage avalanche regulator diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
V
Z
PARAMETER
forward voltage
working voltage
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
V
Z
working voltage
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
R
Z
dynamic resistance
PLVA650A
PLVA653A
PLVA656A to PLVA668A
S
Z
temperature coefficient
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
I
R
reverse current
PLVA650A
PLVA653A
PLVA656A
PLVA659A
PLVA662A
PLVA665A
PLVA668A
V
R
= 80% V
Z
nominal
−
−
−
−
−
−
−
I
Z
= 250
μA
−
−
−
−
−
−
−
1 kHz superimposed;
I
ZAC
is 10% of I
ZDC
; I
Z
= 250
μA
I
Z
= 10
μA
−
−
−
−
−
−
−
−
−
−
CONDITIONS
I
F
= 10 mA
I
Z
= 250
μA
4.80
5.10
5.40
5.70
6.00
6.30
6.60
−
MIN.
PLVA6xxA series
TYP.
−
5.00
5.30
5.60
5.90
6.20
6.50
6.80
4.30
5.20
5.51
5.85
6.19
6.49
6.80
−
−
−
0.20
1.60
1.90
2.40
2.65
2.90
3.40
−
−
−
−
−
−
−
MAX.
0.9
5.20
5.50
5.80
6.10
6.40
6.70
7.00
−
−
−
−
−
−
−
700
250
100
−
−
−
−
−
−
−
20 000
5 000
1 000
500
100
50
10
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Ω
Ω
Ω
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
nA
nA
nA
nA
nA
nA
nA
2004 Jan 14
4
Microchip MCU
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