PMEG6010CEGW
24 November 2016
60 V, 1 A Low VF MEGA Schottky barrier rectifier
Product data sheet
1. General description
Planar Maxium Efficiency General Application (MEGA) Schottky barrier diode rectifier with an
integrated guard ring for stress protection, encapsulated in an SOD123 small Surface-Mounted
Device (SMD) plastic package.
2. Features and benefits
•
•
•
•
•
•
Forward current: I
F
≤ 1 A
Reverse voltage V
R
≤ 60 V
Low foward voltage, typ. V
F
= 570 mV
Low reverse current, typ. I
R
= 11 µA
Small SMD plastic package
AEC-Q101 qualified
3. Applications
•
•
•
•
•
•
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
Automotive applications
4. Quick reference data
Table 1. Quick reference data
Symbol
I
F
V
R
V
F
I
R
[1]
Parameter
forward current
reverse voltage
forward voltage
reverse current
Conditions
T
sp
≤ 55 °C
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
V
R
= 60 V; pulsed; T
j
= 25 °C
[1]
Min
-
-
-
-
Typ
-
-
570
11
Max
1
60
660
50
Unit
A
V
mV
µA
Very short test pulse to prevent junction self-heating.
Nexperia
PMEG6010CEGW
60 V, 1 A Low VF MEGA Schottky barrier rectifier
5. Pinning information
Table 2. Pinning information
Pin
1
2
[1]
Symbol Description
K
A
cathode
anode
[1]
Simplified outline
1
2
Graphic symbol
1
2
sym001
SOD123
The marking bar indicates the cathode.
6. Ordering information
Table 3. Ordering information
Type number
PMEG6010CEGW
Package
Name
SOD123
Description
Plastic surface-mounted package; 2 leads
Version
SOD123
7. Marking
Table 4. Marking codes
Type number
PMEG6010CEGW
Marking code
G7
PMEG6010CEGW
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 November 2016
2 / 12
Nexperia
PMEG6010CEGW
60 V, 1 A Low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
R
I
F
I
F(AV)
Parameter
reverse voltage
forward current
average forward current
Conditions
T
j
= 25 °C
T
sp
≤ 55 °C
δ = 0.5 ; f = 20 kHz; T
amb
≤ 70 °C; square
wave
δ = 0.5 ; f = 20 kHz; T
sp
≤ 135 °C; square
wave
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[1]
Min
-
-
-
-
-
-
[2]
[1]
Max
60
1
1
1
7
9
410
675
150
150
150
Unit
V
A
A
A
A
A
mW
mW
°C
°C
°C
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
t
p
≤ 1 ms; δ ≤ 0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤ 25 °C
-
-
-
-55
-65
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-a)
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1] [2]
[1] [3]
[4]
Min
-
-
-
Typ
-
-
-
Max
305
185
21
Unit
K/W
K/W
K/W
R
th(j-sp)
[1]
[2]
[3]
[4]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm .
Soldering point of cathode tab.
PMEG6010CEGW
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 November 2016
3 / 12
Nexperia
PMEG6010CEGW
60 V, 1 A Low VF MEGA Schottky barrier rectifier
10
3
R
th(j-a
)
(K/W
10
2
duty cycle = 1
0.50
0.25
0.10
0.02
0
0.75
0.33
0.20
0.05
0.01
aaa-024913
10
1
10
-3
10
-2
10
-1
1
10
10
2
t
p (
s)
10
3
FR4 PCB, standard footprint
Fig. 1.
10
3
R
th(j-a
)
(K/W
10
2
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-024914
duty cycle = 1
0.50
0.25
0.10
0.75
0.33
0.20
0.05
10
0.01
0.02
0
1
10
-3
10
-2
10
-1
2
1
10
10
2
t
p (
s)
10
3
FR4 PCB, mounting pad for cathode 1 cm
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG6010CEGW
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 November 2016
4 / 12
Nexperia
PMEG6010CEGW
60 V, 1 A Low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7. Characteristics
Symbol
V
(BR)R
V
F
Parameter
reverse breakdown
voltage
forward voltage
Conditions
I
R
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 1 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 10 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 100 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 500 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 700 mA; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
F
= 1 A; t
p
≤ 300 µs; δ ≤ 0.02 ;
T
j
= 25 °C
I
R
reverse current
V
R
= 5 V; pulsed; T
j
= 25 °C
V
R
= 10 V; pulsed; T
j
= 25 °C
V
R
= 60 V; pulsed; T
j
= 25 °C
C
d
[1]
[1]
[1]
[1]
Min
60
-
-
-
-
-
-
-
-
-
-
Typ
-
210
270
350
460
510
570
0.8
1.1
11
60
Max
-
250
310
400
530
580
660
-
-
50
68
Unit
V
mV
mV
mV
mV
mV
mV
µA
µA
µA
pF
diode capacitance
V
R
= 1 V; f = 1 MHz; T
j
= 25 °C
Very short test pulse to prevent junction self-heating.
10
4
I
F
(mA)
10
3
(1)
(2)
(3)
(4)
(5)
006aaa758
10
5
I
R
10
(µA)
3
10
10
2
10
1
10
- 1
4
(1)
(2)
006aaa759
10
2
(3)
10
1
10
- 2
10
- 3
(4)
10
- 1
0.0
0.2
0.4
0.6
V
F
(V)
0.8
10
- 4
0
20
40
V
R
(V)
60
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 85 °C
(4) T
amb
= 25 °C
(5) T
amb
= -40 °C
Fig. 3.
Forward current as a function of forward
voltage; typical values
(1) T
amb
= 125 °C
(2) T
amb
= 85 °C
(3) T
amb
= 25 °C
(4) T
amb
= -40 °C
Fig. 4.
Reverse current as a function of reverse
voltage; typical values
PMEG6010CEGW
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
24 November 2016
5 / 12
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