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BC847C-TP

产品描述TRANS NPN 45V 0.1A SOT23
产品类别半导体    分立半导体   
文件大小607KB,共4页
制造商Micro_Commercial_Co
标准
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BC847C-TP概述

TRANS NPN 45V 0.1A SOT23

BC847C-TP规格参数

参数名称属性值
晶体管类型NPN
电流 - 集电极(Ic)(最大值)100mA
电压 - 集射极击穿(最大值)45V
不同 Ib,Ic 时的 Vce 饱和值(最大值)500mV @ 5mA,100mA
电流 - 集电极截止(最大值)100nA
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)420 @ 2mA,5V
功率 - 最大值225mW
频率 - 跃迁100MHz
工作温度-55°C ~ 150°C(TJ)
安装类型表面贴装
封装/外壳TO-236-3,SC-59,SOT-23-3
供应商器件封装SOT-23

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MCC
Features
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BC846A
THRU
BC849C
NPN
Plastic-Encapsulate
Transistors
SOT-23
A
D
Maximum Ratings
DEVICE MARKING
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Power Dissipation: 0.225W (T
amb
=25 )(Note 1)
Collector Current: 0.1A
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Operating temperature : -55
Storage temperature : -55
to +150
to +150
BC846A=1A,46A; BC846B=1B,46B;
BC847A=1E,47A; BC847B=1F,47B; BC847C=1G,47C;
BC848A=1J,48A; BC848B=1K,48B: BC848C=1L,48C
BC849B=49B; BC849C=49C;
C
B
C
Electrical Characteristics @ 25
Symbol
Parameter
Unless Otherwise Specified
Min
Max
Units
G
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CBO
H
K
J
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
H
FE(1)
V
CE(sat)
V
BE(sat)
f
T
Collector-Base Breakdown Voltage
(I
C
=10µAdc, I
E
=0)
BC846
BC847
BC848, BC849
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
BC846
BC847
BC848,
BC849
Collector-Emitter Breakdown Voltage
(I
E
=10
µAdc,
I
C
=0)
Collector Cut-off Current
BC846 (V
CB
=70V, I
E
=0)
BC847 (V
CB
=50V, I
E
=0)
BC848,
BC849 (V
CB
=30V, I
E
=0)
Collector Cut-off Current
BC846 (V
CE
=60V, I
B
=0)
BC847 (V
CE
=45V, I
B
=0)
BC848,
BC849 (V
CE
=30V, I
B
=0)
Emitter Cut-off Current
(V
EB
=5V, I
C
=0mA)
DC Current Gain(V
CE
=5V, I
C
=2mA)
BC846A, 847A, 848A
BC846B, 847B, 848B ,849B
BC847C, BC848C ,BC849C
Collector-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Base-Emitter Saturation Voltage
(I
C
=100mA, I
B
=5mA)
Transition Frequency
(V
CE
=5V, I
C
=10mA, f=100MHz)
Vdc
80
50
30
---
---
---
DIMENSIONS
Vdc
65
45
30
---
---
---
Vdc
6
---
---
0.1
µAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
---
0.1
µAdc
Suggested Solder
Pad Layout
.031
.800
.035
.900
---
0.1
µAdc
110
200
420
---
220
450
800
0.5
.079
2.000
inches
mm
Vdc
---
1.1
Vdc
.037
.950
.037
.950
100
---
MHz
Note 1: Transistor mounted on an FR4 printed-circuit board
Revision:
D
www.mccsemi.com
1 of
4
2015/10/20

 
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