VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
Half Bridge IGBT Power Module, 600 V, 100 A
FEATURES
• Low V
CE(on)
trench IGBT technology
• 5 μs short circuit capability
• V
CE(on)
with positive temperature coefficient
• Maximum junction temperature 175 °C
• Low inductance case
• Fast and soft reverse recovery antiparallel FWD
INT-A-PAK
• Isolated copper baseplate using DCB (direct copper
bonding) technology
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V
CES
I
C
at T
C
= 80 °C
V
CE(on)
(typical)
at I
C
= 100 A, 25 °C
Speed
Package
Circuit configuration
600 V
100 A
1.65 V
8 kHz to 30 kHz
INT-A-PAK
Half bridge
TYPICAL APPLICATIONS
• UPS (uninterruptable power supply)
• Switching mode power supplies
• Electronic welders
DESCRIPTION
Vishay’s IGBT power module provides ultra low conduction
loss as well as short circuit ruggedness. It is designed for
applications such as UPS and SMPS.
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Collector current
Pulsed collector current
Diode continuous forward current
Diode maximum forward current
Maximum power dissipation
Short circuit withstand time
RMS isolation voltage
SYMBOL
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
(1)
TEST CONDITIONS
MAX.
600
± 20
UNITS
V
T
C
= 25 °C
T
C
= 80 °C
t
p
= 1 ms
T
C
= 80 °C
t
p
= 1 ms
T
J
= 175 °C
T
C
= 125 °C
f = 50 Hz, t = 1 min
160
100
200
100
200
417
5
4000
W
μs
V
A
P
D
t
SC
V
ISOL
Note
(1)
Repetitive rating: pulse width limited by maximum junction temperature
IGBT ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Collector to emitter voltage
Gate to emitter threshold voltage
Collector cut-off current
Gate to emitter leakage current
SYMBOL
V
(BR)CES
V
CE(on)
V
GE(th)
I
CES
I
GES
TEST CONDITIONS
T
J
= 25 °C
V
GE
= 15 V, I
C
= 100 A, T
J
= 25 °C
V
GE
= 15 V, I
C
= 100 A, T
J
= 175 °C
V
CE
= V
GE
, I
C
= 1.0 mA, T
J
= 25 °C
V
CE
= V
CES
, V
GE
= 0 V, T
J
= 25 °C
V
GE
= V
GES
, V
CE
= 0 V, T
J
= 25 °C
MIN.
600
-
-
4.0
-
-
TYP.
-
1.65
2.00
4.4
-
-
MAX.
-
2.10
-
6.5
5.0
400
mA
nA
V
UNITS
Revision: 19-Sep-17
Document Number: 93799
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
SYMBOL
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
I
SC
L
CE
R
CC’+EE’
t
p
5 μs, V
GE
= 15 V, T
J
= 125 °C,
V
CC
= 360 V, V
CEM
1200 V
V
GE
= 0 V, V
CE
= 30 V, f = 1.0 MHz
V
CC
= 300 V, I
C
= 100 A, R
g
= 2.2
,
V
GE
= ± 15 V, T
J
= 125 °C
V
CC
= 300 V, I
C
= 100 A, R
g
= 2.2
,
V
GE
= ± 15 V, T
J
= 25 °C
TEST CONDITIONS
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
106
49
102
85
0.46
0.95
112
62
126
109
0.78
1.73
7.71
0.53
0.23
900
-
0.75
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
A
nH
m
nF
mJ
ns
mJ
ns
UNITS
SWITCHING CHARACTERISTICS
PARAMETER
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
SC data
Stray inductance
Module lead resistance, terminal to chip
DIODE ELECTRICAL SPECIFICATIONS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Forward voltage
Reverse recovery charge
Peak reverse recovery current
Reverse recovery energy
SYMBOL
V
F
Q
rr
I
rr
E
rec
I
F
= 100 A, V
R
= 600 V,
R
G
= 5.6
V
GE
= -15 V
TEST CONDITIONS
I
F
= 100 A
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
1.40
1.40
5.5
7.3
68
88
0.89
1.71
MAX.
1.80
-
-
-
-
-
-
-
UNITS
V
μC
A
mJ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature
Storage temperature range
Junction to case
IGBT
Diode
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
Power terminal screw: M5
Mounting screw: M6
-
TEST CONDITIONS
MIN.
-
-40
-
-
-
TYP.
-
-
-
-
0.05
2.5 to 5.0
3.0 to 5.0
150
-
MAX.
175
125
0.36
0.57
-
Nm
g
K/W
UNITS
°C
Case to sink (conductive grease applied)
Mounting torque
Weight
Revision: 19-Sep-17
Document Number: 93799
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
5
V
CC
= 300 V
R
G
= 2.2
Ω
V
GE
= ± 15 V
T
J
= 125 °C
200
175
150
125
V
GE
= 15 V
25 °C
4.5
4
3.5
E (mJ)
I
C
(A)
3
2.5
2
1.5
E
ON
100
75
50
25
0
0
0.5
1
1.5
2
175 °C
1
0.5
0
2.5
3
3.5
0
50
100
E
OFF
150
200
V
CE
(V)
Fig. 1 - IGBT Typical Output Characteristics
I
C
(A)
Fig. 3 - IGBT Switching Loss vs. I
C
200
175
150
125
7
V
CE
= 50 V
V
CC
= 300 V
6
5
I
C
= 100 A
V
GE
= ± 15 V
T
J
= 125 °C
E (mJ)
I
C
(A)
175 °C
100
75
50
4
E
on
3
2
E
off
25 °C
25
0
4
5
6
7
8
9
10
1
0
0
10
20
30
40
50
V
GE
(V)
Fig. 2 - IGBT Transfer Characteristics
R
g
(Ω)
Fig. 4 - IGBT Switching Loss vs. R
G
250
Module
200
150
I
C
(A)
100
R
G
= 2.2
Ω
V
GE
= ± 15 V
T
J
= 125 °C
50
0
0
100
200
300
400
500
600
700
V
CE
(V)
Fig. 5 - RBSOA
Revision: 19-Sep-17
Document Number: 93799
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
1
Z
thJC
(K/W)
IGBT
0.1
0.01
0.001
0.01
0.1
1
10
t (s)
Fig. 6 - IGBT Transient Thermal Impedance
200
175
2.5
V
CC
= 300 V
2
R
G
= 2.2
Ω
V
GE
= - 15 V
T
J
= 125 °C
E
REC
1
125 °C
25 °C
0.5
150
125
E (mJ)
1.5
I
F
(A)
100
75
50
25
0
0
0.5
1
1.5
2
0
0
50
100
150
200
V
F
(V)
Fig. 7 - Diode Forward Characteristics
2
1.8
1.6
1.4
E
REC
I
F
(A)
Fig. 8 - Diode Switching Loss vs. I
F
E (mJ)
1.2
1
0.8
0.6
0.4
0.2
0
0
10
20
V
CC
= 300 V
I
F
= 100 A
V
GE
= - 15 V
T
J
= 125 °C
30
40
50
R
G
(Ω)
Fig. 9 - Diode Switching Loss vs. R
G
Revision: 19-Sep-17
Document Number: 93799
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-GT100TP60N
www.vishay.com
Vishay Semiconductors
1
Diode
Z
thJC
(K/W)
0.1
0.01
0.001
0.01
0.1
1
10
t (s)
Fig. 10 - Forward Characteristics of Diode
CIRCUIT CONFIGURATION
6
7
1
2
3
5
4
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95524
Revision: 19-Sep-17
Document Number: 93799
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
