PD - 97220
DirectFET™ Power MOSFET
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Typical values (unless otherwise specified)
IRF6610PbF
IRF6610TRPbF
R
DS(on)
Q
gs2
1.3nC
V
DSS
Q
g
tot
V
GS
Q
gd
3.6nC
R
DS(on)
Q
oss
5.9nC
20V max ±20V max 5.2mΩ@ 10V 8.2mΩ@ 4.5V
Q
rr
6.4nC
V
gs(th)
2.1V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MP
DirectFET™ ISOMETRIC
Description
The IRF6610PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6610PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6610PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
D
@ T
C
= 25°C
I
DM
E
AS
I
AR
30
Typical RDS(on) (mΩ)
Max.
20
±20
15
12
66
120
13
12
VGS, Gate-to-Source Voltage (V)
Units
V
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
6.0
5.0
4.0
3.0
2.0
1.0
0.0
0
2
4
ID= 12A
A
mJ
A
25
20
15
10
5
0
3
4
5
T J = 25°C
6
7
8
ID = 15A
VDS= 16V
VDS= 10V
T J = 125°C
9
10
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2.
Typical Total Gate Charge vs Gate-to-Source Voltage
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.18mH, R
G
= 25Ω, I
AS
= 12A.
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1
05/31/06
IRF6610PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
1.65
–––
–––
–––
–––
–––
41
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
15
5.2
8.2
2.1
-5.2
–––
–––
–––
–––
–––
11
3.9
1.3
3.6
2.4
4.9
5.9
2.0
12
51
15
5.7
1520
440
220
–––
–––
6.8
10.7
2.55
–––
1.0
150
100
-100
–––
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
nC
Ω
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
mV/°C
µA
nA
S
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
V
DS
= 10V
nC
V
GS
= 4.5V
I
D
= 12A
See Fig. 15
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 12A
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
V
DS
= 10V
ƒ = 1.0MHz
V
DS
= V
GS
, I
D
= 250µA
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
12
2.4
1.0
18
3.6
V
ns
nC
–––
–––
120
Min.
–––
Typ. Max. Units
–––
2.8
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A
di/dt = 100A/µs
See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
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IRF6610PbF
Absolute Maximum Ratings
Parameter
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
P
D
@T
C
= 25°C
T
P
T
J
T
STG
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Max.
2.2
1.4
42
270
-40 to + 150
Units
W
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
R
θJA
R
θJC
R
θJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
Typ.
–––
12.5
20
–––
1.4
0.017
Max.
58
–––
–––
3.0
–––
Units
°C/W
W/°C
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
τ
J
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
R
4
R
4
τ
4
R
5
R
5
τ
A
τ
1
τ
2
τ
3
τ
4
τ
5
τ
5
τ
A
1
Ri (°C/W)
1.6195
2.14056
22.2887
20.0457
11.9144
τi
(sec)
0.000126
0.001354
0.375850
7.41
99
0.1
Ci=
τi/Ri
Ci=
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.01
0.1
1
10
100
0.001
1E-006
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
R
θ
is measured at
T
J
of approximately 90°C.
Surface mounted on 1 in. square Cu
board (still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
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3
IRF6610PbF
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
1000
TOP
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
1
≤
60µs PULSE WIDTH
0.1
2.5V
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Tj = 25°C
1
2.5V
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 4.
Typical Output Characteristics
1000
VDS = 10V
≤60µs
PULSE WIDTH
100
T J = 150°C
T J = 25°C
T J = -40°C
Typical RDS(on) (Normalized)
Fig 5.
Typical Output Characteristics
1.5
ID = 15A
V GS = 10V
V GS = 4.5V
ID, Drain-to-Source Current
(Α)
10
1.0
1
0.1
1
2
3
4
5
0.5
-60 -40 -20 0
20 40 60 80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T J , Junction Temperature (°C)
Fig 6.
Typical Transfer Characteristics
10000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
Fig 7.
Normalized On-Resistance vs. Temperature
40
T J = 25°C
30
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
Ciss
1000
Coss
Typical RDS(on) ( mΩ)
C oss = C ds + C gd
C, Capacitance(pF)
20
10
Crss
0
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
140
ID, Drain Current (A)
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 9.
Typical On-Resistance Vs.
Drain Current and Gate Voltage
4
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IRF6610PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
T J = 150°C
T J = 25°C
1
T J = -40°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
100µsec
1
VGS = 0V
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
VSD, Source-to-Drain Voltage (V)
T A = 25°C
T J = 150°C
Single Pulse
0.10
1.00
10.00
1msec
10msec
100.00
0.1
VDS, Drain-to-Source Voltage (V)
Fig 10.
Typical Source-Drain Diode Forward Voltage
70
60
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
Fig11.
Maximum Safe Operating Area
2.5
50
40
30
20
10
0
25
50
75
100
125
150
T C , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( °C )
Fig 12.
Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13.
Typical Threshold Voltage vs. Junction
Temperature
ID
TOP
3.6A
5.3A
BOTTOM 12A
50
40
30
20
10
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 14.
Maximum Avalanche Energy Vs. Drain Current
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