Freescale Semiconductor
Technical Data
MRFG35002N6T1 replaced by MRFG35002N6AT1.
Document Number: MRFG35002N6
Rev. 2, 1/2008
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 6 Volts, I
DQ
=
65 mA, P
out
= 158.5 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 41 dBc in 3.84 MHz Channel Bandwidth
•
1.5 Watts P1dB @ 3550 MHz, CW
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
RoHS Compliant.
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35002N6T1
3.5 GHz, 1.5 W, 6 V
POWER FET
GaAs PHEMT
ARCHIVE INFORMATION
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
T
C
Value
8
-5
22
- 65 to +150
175
- 20 to +85
Unit
Vdc
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
15.2
Unit
°C/W
Table 3. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
1
Package Peak Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2006, 2008. All rights reserved.
MRFG35002N6T1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 6 Vdc, V
GS
= - 2.5 Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
= - 2.5 Vdc)
Gate - Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 8.7 mA)
Quiescent Gate Voltage
(V
DS
= 6 Vdc, I
D
= 65 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
- 1.2
- 1.1
Typ
1.7
< 1.0
—
< 1.0
- 0.9
- 0.8
Max
—
100
600
9
- 0.7
- 0.6
Unit
Adc
μAdc
μAdc
mAdc
Vdc
Vdc
ARCHIVE INFORMATION
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 6 Vdc, I
DQ
= 65 mA, P
out
= 158.5 mW Avg., f = 3550 MHz,
Single - Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
h
D
ACPR
8.5
23
—
10
27
- 41
—
—
- 38
dB
%
dBc
Typical RF Performance
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 6 Vdc, I
DQ
= 65 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P
1dB
—
1.5
—
W
MRFG35002N6T1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
V
BIAS
C8
C13
C12
C11
C10
C9
C7
R1
C19
C20
C6
RF
INPUT
Z1
C1
Z2
Z3
Z4
Z5
C5
C22
Z6
Z7
Z8
Z9
Z10
C21
Z11
Z12
Z13
C24
C3
C4
C23
Z14
C18
C17
C16
C15
C14
V
SUPPLY
RF
OUTPUT
ARCHIVE INFORMATION
Z1, Z14
Z2
Z3
Z4
Z5
Z6, Z11
Z7
0.044″
0.044″
0.044″
0.468″
0.468″
0.015″
0.031″
x 0.125″ Microstrip
x 0.500″ Microstrip
x 0.052″ Microstrip
x 0.010″ Microstrip
x 0.356″ Microstrip
x 0.549″ Microstrip
x 0.259″ Microstrip
Z8
Z9
Z10
Z12
Z13
PCB
0.420″ x 0.150″ Microstrip
0.150″ x 0.068″ Microstrip
0.290″ x 0.183″ Microstrip
0.044″ x 0.115″ Microstrip
0.044″ x 0.894″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. MRFG35002N6 Test Circuit Schematic
Table 5. MRFG35002N6 Test Circuit Component Designations and Values
Part
C1, C24
C2
C3
C4
C5, C6, C21, C22
C7, C20
C8, C19
C9, C18
C10, C17
C11, C16
C12, C15
C13, C14
C23
R1
Not Used
1.2 pF Chip Capacitor
0.7 pF Chip Capacitor
5.6 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
μF
Chip Capacitors
39K pF Chip Capacitors
10
μF
Chip Capacitors
0.2 pF Chip Capacitor
100
Ω,
1/4 W Chip Resistor
08051J1R2BBT
08051J0R7BBT
08051J6R8BBT
100A100JP150X
100A101JP150X
100B101JP500X
100B102JP50X
CDR33BX104AKWS
200B393KP50X
GRM55DR61H106KA88B
08051J0R2BBT
AVX
AVX
AVX
ATC
ATC
ATC
ATC
Kemet
ATC
Kemet
AVX
Description
13 pF Chip Capacitors
Part Number
100A130JP150X
Manufacturer
ATC
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
C13
C12
C11
C10
C9
C8
C7
C18
C17
C16
C15
C14
R1
C5
C6
C19
C20
C22
C21
ARCHIVE INFORMATION
C2
C1
C3
C4
C23
C24
MRFG35002M6, Rev. 2
3.5 GHz - 3.6 GHz
Figure 2. MRFG35002N6 Test Circuit Component Layout
MRFG35002N6T1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
14
G
T
, TRANSDUCER GAIN (dB)
12
V
DS
= 6 Vdc, I
DQ
= 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
S
= 0.813é−115.4_,
Γ
L
= 0.748é−147.8_
G
T
50
10
30
8
20
6
η
D
4
0
5
10
15
20
25
10
ARCHIVE INFORMATION
P
out
, OUTPUT POWER (dBm)
Figure 3. Transducer Gain and Drain
Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
−20
V
DS
= 6 Vdc, I
DQ
= 75 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth
Γ
S
= 0.813é−115.4_,
Γ
L
= 0.748é−147.8_
0
IRL, INPUT RETURN LOSS (dB)
−30
−5
−40
IRL
−10
−50
ACPR
−60
0
6
12
18
24
P
out
, OUTPUT POWER (dBm)
−15
−20
30
Figure 4. Single - Carrier W - CDMA ACPR and
Input Return Loss versus Output Power
NOTE:
All data is referenced to package lead interface.
Γ
S
and
Γ
L
are the impedances presented to the DUT.
All data is generated from load pull, not from the test circuit shown.
MRFG35002N6T1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
0
30
η
D
, DRAIN EFFICIENCY (%)
40
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