BT139B-600F
4Q Triac
20 August 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT404 (D2PAK) surface-mountable plastic package
intended for use in applications requiring high bidirectional transient and blocking voltage capability
and high thermal cycling performance. Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Surface-mountable package
Triggering in all four quadrants
3. Applications
•
•
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
-
-
-
Typ
-
-
-
-
-
8
8
10
Max
600
16
155
170
125
25
25
25
Unit
V
A
A
A
°C
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
WeEn Semiconductors
BT139B-600F
4Q Triac
Symbol
Parameter
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Min
-
-
-
50
Typ
22
6
1.2
250
Max
70
45
1.6
-
Unit
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating voltage
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 20 A; T
j
= 25 °C;
Fig. 10
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 95 °C; dI
com
/dt = 7.2 A/
ms; I
T
= 16 A; gate open circuit
Dynamic characteristics
dV
com
/dt
-
20
-
V/µs
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main
terminal 2
1
2
3
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
D2PAK (SOT404)
6. Ordering information
Table 3. Ordering information
Type number
BT139B-600F
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3
leads (one lead cropped)
Version
SOT404
BT139B-600F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
2 / 13
WeEn Semiconductors
BT139B-600F
4Q Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
50
I
T(RMS)
(A)
40
001aab090
Conditions
Min
-
Max
600
16
155
170
120
50
2
5
0.5
150
125
001aab091
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
mb
≤ 99 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 150 mA
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
20
I
T(RMS)
(A)
15
(1)
30
10
20
10
5
0
10
-2
10
-1
1
10
surge duration (s)
0
- 50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
= 99 °C
Fig. 1. RMS on-state current as a function of surge
duration; maximum values
(1) T
mb
= 99 °C
Fig. 2. RMS on-state current as a function of mounting
base temperature; maximum values
BT139B-600F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
3 / 13
WeEn Semiconductors
BT139B-600F
4Q Triac
25
P
tot
(W)
20
001aab093
conduction
angle,
α
(degrees)
30
60
90
120
180
form
factor
a
2.816
1.967
1.570
1.329
1.110
95
T
mb(max)
(°C)
101
α
α = 180 °
120
15
α
90
60
30
107
10
113
5
119
0
0
5
10
15
I
T(RMS)
(A)
125
20
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values.
160
I
TSM
(A)
120
001aab102
80
I
T
40
I
TSM
t
1/f
T
j(init)
= 25 °C max
1
10
10
2
number of cycles
10
3
0
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT139B-600F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
4 / 13
WeEn Semiconductors
BT139B-600F
4Q Triac
10
3
001aab092
I
TSM
(A)
10
2
(1)
I
T
(2)
I
TSM
t
t
p
10
10
-2
T
j(init)
= 25 °C max
10
-1
1
10
T
p
(ms)
10
2
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT139B-600F
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
20 August 2018
5 / 13
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