BT138-600
4Q Triac
Rev.01 - 16 March 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for
use in applications requiring high bidirectional transient and blocking voltage capability and
high thermal cycling performance. Typical applications include motor control, industrial and
domestic lighting, heating and static switching.
2. Features and benefits
•
•
•
•
High blocking voltage capability
Less sensitive gate for improved noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
3. Applications
•
•
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
T
j
Symbol
I
GT
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
100
250
-
V/μs
Min
-
-
-
-
full sine wave; T
mb
≤ 99 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
Conditions
Values
600
12
95
125
Typ
5
8
10
22
Max
35
35
35
70
Unit
V
A
A
°C
Unit
mA
mA
mA
mA
Absolute maximum rating
Static characteristics
WeEn Semiconductors
BT138-600
4Q Triac
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
mb
T1
T2
G
T2
main terminal 1
main terminal 2
gate
mounting base; main terminal 2
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT138-600
TO-220AB
Description
plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
Version
SOT78
7. Marking
Table 4. Marking codes
Type number
BT138-600
Marking codes
BT138-600
BT138-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
16 March 2018
2 / 13
WeEn Semiconductors
BT138-600
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
full sine wave; T
mb
≤ 99 °C;
Fig 1; Fig 2; Fig 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig 4; Fig 5
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
I
2
t
dI
T
/dt
I
2
t for fusing
rate of rise of on-state
current
t
p
= 10 ms; sine-wave pulse
I
G
= 70 mA; T2+ G+
I
G
= 70 mA; T2+ G-
I
G
= 70 mA; T2- G-
I
G
= 140 mA; T2- G+
I
GM
P
GM
P
G(AV)
T
stg
T
j
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
Conditions
Values
600
12
95
105
45
50
50
50
10
2
5
0.5
-40 to 150
125
Unit
V
A
A
A
A
2
s
A/μs
A/μs
A/μs
A/μs
A
W
W
°C
°C
BT138-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
16 March 2018
3 / 13
WeEn Semiconductors
BT138-600
4Q Triac
Fig. 1. RMS on-state current as a function of mounting
base temperature; maximum values
f = 50 Hz; T
mb
= 99 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
BT138-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
16 March 2018
4 / 13
WeEn Semiconductors
BT138-600
4Q Triac
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
t
p
≤ 20 ms
(1) dI
T
/dt limit
(2) T2- G+ quadrant limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BT138-600
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
16 March 2018
5 / 13
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